NEEDS Annual Review: May 8-9, 2017

Slides:

Advertisements

Similar presentations

Contact Modeling and Analysis of InAs HEMT Seung Hyun Park, Mehdi Salmani-Jelodar, Hong-Hyun Park, Sebastian Steiger, Michael Povoltsky, Tillmann Kubis,

Advertisements

Topology of Complex Energy Bands in the Resonant Scattering Problem An exercise in complex variable theory applied to condensed matter physics.

Network for Computational Nanotechnology (NCN) Your Title Here Your Name Here Network for Computational Nanotechnology (NCN) Electrical and Computer Engineering.

International Workshop on Computational Electronics - 10 Oct 26, Comparison of full-band Monte Carlo and Non-equilibrium Green’s function simulations.

Chernogolovka, September 2012 Cavity-coupled strongly correlated nanodevices Gergely Zaránd TU Budapest Experiment: J. Basset, A.Yu. Kasumov, H. Bouchiat,

Numerical Parallel Algorithms for Large-Scale Nanoelectronics Simulations using NESSIE Eric Polizzi, Ahmed Sameh Department of Computer Sciences, Purdue.

Electrical Techniques MSN506 notes. Electrical characterization Electronic properties of materials are closely related to the structure of the material.

Network for Computational Nanotechnology (NCN) NanoElectronic Modeling with the NEMO toolkit on nanoHUB Jim Fonseca Network for Computational Nanotechnology.

Exam 2 Mean was 67 with an added curve of 5 points (total=72) to match the mean of exam 1. Max after the curve = 99 Std Dev = 15 Grades and solutions are.

Breakdown of the adiabatic approximation in low-dimensional gapless systems Anatoli Polkovnikov, Boston University Vladimir Gritsev Harvard University.

PHYS Quantum Mechanics PHYS Quantum Mechanics Dr Jon Billowes Nuclear Physics Group (Schuster Building, room 4.10)

Gerhard Klimeck Applied Cluster Computing Technologies Group Quantum and semi-classical transport in RTDs using NEMO 1-D Gerhard Klimeck Jet Propulsion.

Breakdown of the adiabatic approximation in low-dimensional gapless systems Anatoli Polkovnikov, Boston University Vladimir Gritsev Harvard University.

PHYS Quantum Mechanics PHYS Quantum Mechanics Dr Jon Billowes Nuclear Physics Group (Schuster Building, room 4.10)

Theory of vibrationally inelastic electron transport through molecular bridges Martin Čížek Charles University Prague Michael Thoss, Wolfgang Domcke Technical.

MOS-AK ESSCIRC Leuven (Belgium) On the Analysis of Parasitic Quantum Effects in Classical MOS Circuits Frank Felgenhauer, Simon Fabel, Wolfgang.

Full-band Simulations of Band-to-Band Tunneling Diodes Woo-Suhl Cho, Mathieu Luisier and Gerhard Klimeck Purdue University Investigate the performance.

PHYS Quantum Mechanics PHYS Quantum Mechanics Dr Jon Billowes Nuclear Physics Group (Schuster Building, room 4.10)

Network for Computational Nanotechnology (NCN) UC Berkeley, Univ.of Illinois, Norfolk State, Northwestern, Purdue, UTEP First Time User Guide to OMEN Nanowire**

IWCE Meeting, Oct 2004 Multi-Dimensional Tunneling in Density- Gradient Theory M.G. Ancona Naval Research Laboratory, Washington, DC and K. Lilja.

Efficient solution algorithm of non-equilibrium Green’s functions in atomistic tight binding representation Yu He, Lang Zeng, Tillmann Kubis, Michael Povolotskyi,

Weak positive correlation Weak negative correlation Strong positive correlation Strong negative correlation Q. Describe the correlation.

Dynamic response of a mesoscopic capacitor in the presence of strong electron interactions Yuji Hamamoto*, Thibaut Jonckheere, Takeo Kato*, Thierry Martin.

Tutorial3: NEMO5 Models Jean Michel D. Sellier, Tillmann Kubis, Michael Povolotskyi, Jim Fonseca, Gerhard Klimeck Network for Computational Nanotechnology.

Figure Schematic depicting tunneling across a normal-insulator- normal (NIN) junction at T=0. (Reproduced with kind permission of J. Hergenrother.)

A Comprehensive Approach to Sustainability. The Sustainable Concordia “Project” A campus sustainability assessment Multi-stakeholder engagement 100 student.

Network for Computational Nanotechnology (NCN) Purdue, Norfolk State, Northwestern, MIT, Molecular Foundry, UC Berkeley, Univ. of Illinois, UTEP Tight-Binding.

Nonequilibrium Green’s Function and Quantum Master Equation Approach to Transport Wang Jian-Sheng 1.

Network for Computational Nanotechnology (NCN) UC Berkeley, Univ.of Illinois, Norfolk State, Northwestern, Purdue, UTEP Generation of Empirical Tight Binding.

Lecture 1 – Introduction to the WKB Approximation All material available online at follow links.

PARTICLE PHYSICS Particles and Interactions. Classifying Particles Most particles fall broadly into two types which can then be broken down further The.

Quantum pumping and rectification effects in interacting quantum dots Francesco Romeo In collaboration with : Dr Roberta Citro Prof. Maria Marinaro University.

Physics Department, Beijing Normal University

Gerhard Klimeck High Performance Computing Group Software Development at Academia, Government Labs, Industry John Barker Agenda/Questions: How can the.

Theory and measurement: comparison V.A. Maisheev, IHEP, Protvino For aims of comparison with the experimental data the calculations of characteristics.

12/8/2015A. Ali Yanik, Purdue University1 Spin Dependent Electron Transport in Nanostructures A. Ali Yanik † Dissertation † Department of Physics & Network.

Performance Predictions for Carbon Nanotube Field-Effect Transistors

Network for Computational Nanotechnology (NCN) UC Berkeley, Univ.of Illinois, Norfolk State, Northwestern, Purdue, UTEP First time user guide for RTD-NEGF.

Network for Computational Nanotechnology (NCN) Gerhard Klimeck Berkeley, Univ. of Florida, Univ.of Illinois, Norfolk State, Northwestern, Purdue, Stanford,

NTNU, April 2013 with collaborators: Salman A. Silotri (NCTU), Chung-Hou Chung (NCTU, NCTS) Sung Po Chao Helical edge states transport through a quantum.

Onoprienko N. E-71. LED or light emitting diode - a semiconductor device with a pn junction created by the optical radiation by passing electric current.

Magnetic and Electronic Properties of Organic Semiconductors

ACTFEL Device Modeling via SPICE

Day 17 – September 20th and 21st Objective:

Eco 200 – Principles of Macroeconomics

Contact Resistance Modeling and Analysis of HEMT Devices S. H. Park, H

Best case realistic performance?

Predicting TMD gated structure stark effect photoluminescence

Contact Resistance Modeling in HEMT Devices

OMEN: a Quantum Transport Modeling Tool for Nanoelectronic Devices

Objective: Demonstrate BTBT capability Approach:

Multi-core CPU Power Control

Lesson 2.4 Using Linear Models.

Investigating Relationships

2-7 Curve Fitting with Linear Models Holt Algebra 2.

Electronic structure of the SiO2 slab

CV simulation of SiGe bulk p-mosFETs -Abhijeet Paul1, Shweta Deora2 & Gerhard Klimeck1 Results: Objective: Simulation of CV for bulk SiGe p-mosFETs and.

ECE 874: Physical Electronics

Eco 200 – Principles of Macroeconomics

Realistic and highly efficient

A first step towards the P wave only modeling plan

Locomotive Test and CI for Two Proportions Sample X N Sample p

5.1 nth Roots and Rational Exponents

Treatment of proximal plantar fasciitis with ultrasound-guided steroid injection Wen-Chung Tsai, MD, Chung-Li Wang, MD, PhD, Fuk-Tan Tang, MD, Tsz-Ching.

Simulation workpackage

Center for Sponsored Coastal Ocean Research

Service Platform for Green European Transportation

Real time quantum dynamics in systems with many degrees of freedom ACS PRF Grant # AC6 PI: Eli Pollak, Chemical Physics Dept. Weizmann Institute.

Balanced scales and equations

Bandgap modification due to strain

Presentation transcript:

NEEDS Annual Review: May 8-9, 2017 Multi-Scale Nonequilibrium Green’s Function Method for LEDs: Balance of Thermalization and Tunneling Junzhe Geng,1,a) , Kuang-Chung Wang,1 Prasad Sarangapani,1 Ben Browne,2 Carl Wordelman,2 Erik Nelson,2 Tillmann Kubis,1 and Gerhard Klimeck1 Modle LED with quantum transport. Goals: 1) Multi-scale, multi-physics model including exact QM, approximate occupancy, strong scattering 2) Predicting IV and IQE curve of real world devices. DOS, charge show Quantum Effects Current conservation ensured Predicting realistic device NEEDS Annual Review: May 8-9, 2017