N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

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N. Maslov, NSC "Kharkov Insitute of Physics and Technology'' ABOUT THE POSSIBILITY OF Si SINGLE-CHANNEL AND MICROSTRIP DETECTORS UTLIZATION FOR MONITORING THE EXTRACTED BEAMS N. Maslov Institute of High Energy and Nuclear Physics National Science Centre “Kharkov Institute of Physics and Technology” DESIGN AND INVESTIGATION OF SILICON MICROSTRIP DETECTORS IN NSC “KIPT” DESIGN AND INVESTIGATION OF SILICON SINGLE-CHANNEL DETECTORS Development of methods and apparatus for detectors investigation and testing Detecting module assembly IRRADIATION OF SILICON DETECTORS Registration of particles 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

SINGLE SIDED SILICON MICROSTRIP DETECTOR 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

DOUBLE SIDED SILICON MICROSTRIP DETECTOR 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

DOUBLE SIDED SILICON MICROSTRIP DETECTOR Ohmic side 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

N. Maslov, NSC "Kharkov Insitute of Physics and Technology'' 1) 1994-2000 – Development and manufacturing of single- and double-sided microstrip silicone detectors (DSSD). Four options of detectors have been manufactured and investigated. The necessary measurement and microposition equipment including manual probe stations have been developed and manufactured for these investigations. 2) 1999-2002 – Development of methods and apparatus for testing that were necessary for DSSD mass production stage. Automatic probe stations have been developed and manufactured in order to test DSSD on this stage. Minimum quantity of methods that give the possibility to recognize all defects of DSSD on the stage of mass production have been developed. Apparatus and methods were used for full testing of the pretender run of DSSD produced by NSC KIPT. Under way of fulfilling these works the team has obtained required experience of DSSD manipulating and testing on the mass production stage. 3) 2002-2006 – Participating in testing of ALICE DSSD. 4) 2007-2008 – Fulfilling of final works on investigation ALICE DSSD and investigation of ALICE detector modules. 5) 2009-2011 - Silicone detectors R@D, testing equipment development. 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

MICROSTRIP DETECTOR TESTING. KHARKOV 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

MICROSTRIP DETECTOR TESTING . KHARKOV 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

MICROSTRIP DETECTOR TESTING . KHARKOV 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

MICROSTRIP DETECTOR TESTING . KHARKOV 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

MICROSTRIP DETECTOR TESTING . KHARKOV 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

MICROSTRIP DETECTOR TESTING . KHARKOV 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

MICROSTRIP DETECTOR TESTING . KHARKOV 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

MICROSTRIP DETECTOR TESTING . KHARKOV 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

MICROSTRIP DETECTOR TESTING . KHARKOV 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

MICROSTRIP DETECTOR TESTING . KHARKOV 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

MICROSTRIP DETECTOR TESTING . KHARKOV 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

MICROSTRIP DETECTOR TESTING . KHARKOV 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

Electrical Specifications DETECTOR # 2 - Operating voltage Vo: 50 V - Leakage current of the guard ring: 50 nA - Leakage current of the bias ring (Ib.r.): 0,9 µA -Leakage current of each strip:  0,5 nA (Leakage currents are defined at operating voltage Vo(Vo  Vi + 5 V(Vi- insulation voltage)), in the darkness and at a temperature of 20°C). - Detector breakdown voltage Vbd ( Ib.r.  2 Ib.r.(50V)): Vbd  100 V Polysilicon resistors: p+-side - 11 M n+-side - 11 M - Insulation resistance between adjacent DC strips at Vo: p+-side -  50 G n+-side -  10 G - Interstrip capacitance Cis (50 V, 1 MHz ): p+-side - 8 pF n+-side - 10 pF - The coupling capacitance Cc.c. of the strips: p+-side - 160 pF n+-side - 200 pF - Breakdown voltage of coupling capacitors: p+-side -  100 V n+-side -  100 V - Leakage current through individual coupling capacitors (measured with 20 V applied across the AC capacitor dielectric, e.g. between aluminium strip and bulk):  0,5 nA - Resistance of a metal strip (AC strip) end-to-end:  50  11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

ALICE MICROSTRIP DETECTOR TESTING. TRIESTE 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

N. Maslov, NSC "Kharkov Insitute of Physics and Technology'' 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

Si SINGLE-CHANNEL DETECTOR б а 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

Si SINGLE-CHANNEL DETECTOR 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

N. Maslov, NSC "Kharkov Insitute of Physics and Technology'' ДЕТЕКТИРУЮЩИЕ МОДУЛИ Для защиты от воздействия дестабилизирующих факторов окружающей среды при проведении исследований разработаны и используются герметизированные неохлаждаемые детектирующие модули на основе ПКД. Сцинтиллятор Детектор Фотодиод Коллиматор Основание Корпус Основание Корпус Разработаны два типа модулей - на основе неохлаждаемого ПКД для регистрации излучения в диапазоне от 3 кэВ до 150 кэВ и детектирующей системы типа сцинтиллятор - кремниевый PIN фотодиод в диапазоне от 0,04 МэВ до 1 МэВ. 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

Si SINGLE-CHANNEL DETECTOR ~1кэВ. 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

CsI(Tl), 1.8×1.8×2.4 мм: CsI(Tl), 5×5×10 mm2, Кα= 75 кэВ Si SINGLE-CHANNEL DETECTOR + СsI(Tl) CsI(Tl), 1.8×1.8×2.4 мм: 57Co, Eγ= 122 кэВ and 241Am, Eγ = 59.54кэВ CsI(Tl), 5×5×10 mm2, Кα= 75 кэВ 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

модуля герметизированного неохлаждаемого Si детектора Общий вид экспериментальных образцов: модуля герметизированного неохлаждаемого Si детектора рентгеновского излучения (1), предусилителя (2) и блока питания предусилителя (3). 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

IRRADIATION OF SILICON MICROSTRIP DETECTORS . KHARKOV Full depletion voltage for different irradiation dose. O, , , +– are here the data for four different detectors. Irradiation by high energy electrons. Leakage currents variation for microstrip detectors by irradiation. 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

IRRADIATION OF SILICON MICROSTRIP DETECTORS . KHARKOV Interstrip resistance for the detectors without (1) and with (2) Si3N4. Interstrip resistances ratio for the detectors with double-layer and single-layer insulation (3). 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''

N. Maslov, NSC "Kharkov Insitute of Physics and Technology'' 11/29/2018 N. Maslov, NSC "Kharkov Insitute of Physics and Technology''