Summary of 3D SINTEF CMS pixel sensors R&D at Purdue

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Presentation transcript:

Summary of 3D SINTEF CMS pixel sensors R&D at Purdue Enver Alagoz1, O. Koybasi1, A. Krzywda1, M. Kress1, K. Arndt1, D. Bortoletto1, I. Shipsey1, G. Bolla1, T. E. Hansen2, A. Kok2, T. A. Hansen2, N. Lietaer2, G. U. Jensen2, A. Summanwar2, R. Riviera3, L. Uplegger3, and S. W. L. Kwan3 1Physics Department, Purdue University, West Lafayette, IN 47907-2036 USA 2SINTEF, SINTEF MiNaLab, Blindern, 0314 Oslo, Norway 3Fermilab, Batavia, IL 60510-5011 USA

Outline SINTEF 3D pixel sensors for CMS Summary and outlook Lab tests Testbeam at FNAL Irradiation study Summary and outlook

3D sensors The edge is an electrode! Dead volume at the Edge < 2 microns! By C. Kenney in 1997 By S. Parker in 1995 NIMA 395 (1997) 328 IEEE Trans Nucl Sci 464 (1999) 1224 IEEE Trans Nucl Sci 482 (2001) 189 IEEE Trans Nucl Sci 485 (2001) 1629 IEEE Trans Nucl Sci 48 6 (2001) 2405 CERN Courier, Vol 43, Jan 2003, pp 23-26 NIM A 509 (2003) 86-91 NIM A 524 (2004) 236-244 NIM A 549 (2006) 127 NIM A 560 (2006) 272 IEEE TNS 53 (2006) 1676 NIM A 587 (2008) 243-249 Advantages: Low noise Lower depletion voltage Large area coverage Fast response Short drift length Less trapping

SINTEF 3D Wafers Wafer B5 Wafer B2-16 B5 : 280µm substrate thickness P-type wafers include sensors for: CMS ATLAS MediPix MediPix Wafer B2-16 MediPix B5 : 280µm substrate thickness B2-16 : 200µm substrate thickness

3D CMS pixel layouts 2E Configuration 4E Configuration 100 μm 150 μm n+ (readout) p+ (bias) 4E Configuration 100 μm 150 μm

IV measurements T = 21 °C

Lab tests @ V = -40 V : T=21 °C

Noise tests @ T=21 °C Unable to measure noise at Vbias < 40V for 4E sensors

CLOCK AND TRIGGER DISTRIBUTION FNAL testbeam 120 GeV protons No B field BEAM CONTROL ROOM DUT PIXEL DETECTORS SCINTILLATORS 3.7V POWER SUPPLY ACELLERATOR CLOCK CLOCK AND TRIGGER DISTRIBUTION Meson Area Purdue 3D plaquette Plastic protection Cooling tubes

Beam test results 2E_WB5_2 March 2010 beam test data Tsensor ≈ 16 oC Vbias = -40V

Irradiation study Sensors irradiated in Los Alamos National Lab with 800 MeV protons (1MeV neutron equivalent factor ~1) fluences: 1, 2.2, and 7.2x1015 neq/cm2 with 11% beam uncertainty at room temperature no bias applied Annealed at 80 °C for 1 hour All ROCs were dead (probably due to bad handling)

Irradiation study Leakage current related damage rate α ΔΙ[A] = αVΦ[neq/cm2] where V is sensor active volume αaverage(2E) = 2.8x10-17 A/cm vs αRD48 = 3.99x10-17 A/cm αaverage(4E) = 4.5x10-17 A/cm 4E α values are higher than 2Es Full depletion not reached due to early breakdown 2E & 4E sensor currents at the highest Φ are ~1 mA

Summary All sensors were wire bonded and assembled at Purdue Lab characterization tests: IV results: breakdown > -100 V All performed well but with higher noises vs CMS planar sensors Good bump bond quality Testbeam: Testbeam at FNAL with 120 GeV protons in 2010 Data taken at several voltages and thresholds Spatial resolution analysis is ongoing Irradiation: 6 sensors were irradiated to fluences 1,2.2, and 7.2x1015 neq/cm2 No lab characterization tests done due to dead ROCs Leakage current damage rates determined

3D sensor inventory Total: 23 3D sensors Date Recived Name Type Wafer Bump Bond Assembled on IV scan Functional ROC? at Dec-2009 3D_2E_B216_6 2E B2-16 IZM Left VHDI Good, BD @ -120V Yes 3D_2E_WB5_2 B5 3D_4E_WB5_8 4E Good, BD @ -100V 3D_4E_WB216_5 Good, BD @ -110V May-2009 3D_2E_B216_2 3D_2E_B5_6 3D_2E_B5_7 Bad, BD @ -10V 3D_4E_B5_4 3D_4E_B5_5 Oct-2010 3D_2E_B2_1 B2 Right VHDI Good, BD @ -140V 3D_2E_B2_2 3D_4E_B2-10_1 B2-10 Good, BD @ -115V 3D_2E_B2-10_2 3D_2E_B2-10_3 3D_2E_B2-10_4 Bad, BD @ 0V 3D_2E_B2-10_5 Jul-2010 3D_2E_B2-6_4x6yA B2-6 SELEX Bad, BD @ -20V No 3D_2E_B2-6_4x6yB 3D_2E_B2-6_4x6yC Bad, BD @ -120V 3D_2E_B2-6_4x6yD 3D_2E_B2-6_4x7yB Feb-2011 3D_2E_6 ? no IV taken Broken 3D_1E_7 1E Good, BD @ -50V 3D_1E_8 BD = Breakdown Total: 23 3D sensors IZM bump bonded [SnPb]: 11x 2E and 5x 4E (SINTEF) SELEX bump bond [In]:5x 2Es (SINTEF), 2E (FBK), 2x 1E (FBK) The 3D sensors listed below were irradiated in Los Alamos Lab. Radiation: protons Fluences: 1e15, 2e15, 7.2e15 800 p/cm2 Energy: 800 MeV 2E sensors 4E sensors 3D_4E_B2-16_5 3D_4E_B5_8

3DC Czech Technical University, Fermilab, Purdue University, SINTEF, SLAC, University of Hawaii, University of Manchester