EU Compound Semiconductor Materials Committee Liaison Report April 2012 v1

Leadership Committee Co-chair Arnd Weber; SiCrystal, Germany Updated April 24, 2012

Leadership Change Roland Bindemann; FCM, Germany stepped down as Committee Co-chair. Updated April 24, 2012

Meeting Information Last meeting April 17, 2012, in Nürnberg, Germany Next meeting October 2012, in conjuction with SEMICON Europa, Dresden, Germany Updated April 24, 2012

Committee Structure & Leaders Compound Semiconductor Materials Committee Co-Chair: Arnd Weber - SiCrystal Carbon in GaAs TF L: Hans-Christian Alt - HM EPD in GaAs TF L: Ulrich Kretzer - FCM Silicon Carbide TF L: Arnd Weber - SiCrystal GaSb Wafer Specification TF L: Wolfgang Jantz - Semimap L: Roy Blunt - IQE Updated April 24, 2012

New SNARFs/TFOF None Updated April 24, 2012

Ballots issued in cycle 1-2012 and reviewed at April 2012 TC meeting Doc. #4618, New Standard: Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy APPROVED AS BALLOTED Doc. #4809, Line Item Revisions to SEMI M75-0309, Specifications for Polished Monocrystalline Gallium Antimonide Wafers APPROVED AS BALLOTED Doc. #4810, New Standard: Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors APPROVED AS BALLOTED Updated April 24, 2012

Global SiC Task Force Leader: Arnd-Dietrich Weber, SiCrystal Rationale: Create a basic standard for SiC wafer material and a specification for 2”, 3” and 100mm SiC wafers Drafting document 5370, Specification for 150 mm Silicon Carbide Single-crystalline Substrates Updated April 24, 2012

GaSb Wafer Specification Global Task Force Leaders: Wolfgang Jantz, Semimap & Roy Blunt, IQE Rationale: To elaborate a standard specification defining a set of GaSb wafer parameters, including in particular diameter, thickness, orientation(s), laser markings Doc. 4809, Line Item revison to SEMI M75 Specifications for Polished Monocrystalline Gallium Antimonide Wafers Ballot was issued in cycle 1-2012. Passed adjudication at April 2012 Committee meeting, to be published in June pending successful A&R procedural review Updated April 24, 2012

Carbon in GaAs Task Force Leader: Hans-Christian Alt, FHM Rationale: Performing a round-robin study (FTIR) on selected gallium arsenide samples for the assessment of the quality and the limitations of state-of-the-art measurement equipment and the definition of relevant technical parameters. Doc. 4618, Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy Ballot was issued in cycle 1-2012. Passed adjudication at April 2012 Committee meeting, to be published in June pending successful A&R procedural review Updated April 24, 2012

EPD Measurement in GaAs Task Force Leader: Ulrich Kretzer, Freiberger Rationale: Development of a standard test method for determination of dislocation etch pit density in monocrystals of III-V-compound semiconductors. Doc. 4810, Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors Ballot was issued in cycle 1-2012. Passed adjudication at April 2012 Committee meeting, to be published in June pending successful A&R procedural review Updated April 24, 2012

Yann Guillou (yguillou@semi.org) Contact Information Yann Guillou (yguillou@semi.org) Updated April 24, 2012