Silicon Carbide for Secondary Collimators

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Presentation transcript:

Silicon Carbide for Secondary Collimators R. Blanchon 5/20/2009

Specification Candidate: Silicon Carbide (SiC) Ceramic absorber with metallic support Dimensions: Tiles of 40 mm * 20 mm * 10 mm Required properties: Electrical resistivity: 1 to 100 Ω.m Low CTE High thermal conductivity and specific heat High density Candidate: Silicon Carbide (SiC)

Theorical electrical resistivity Potential suppliers ESK (Ekasic T) Saint-Gobain Keramo Boostec CoorsTek (Pure SiC LR) Microcertec Rohm & Haas Production mode Sintering CVD Theorical electrical resistivity (Ω.cm) 102 - 103 1 No information 107 < 0.1 Or > 106 < 10 > 1000 Contact Tests Waiting for samples

Potential suppliers [J/kg] [W/m]

Electrical Resistivity F Ω First measurements on ESK samples Without surface preparation → ρelec = 43 Ω.cm With surface preparation → ρelec = 5380 Ω.cm Graphitization of SiC ESK Keramo Boostec Longueur (cm) 4.99 5.00 2.50 Largeur (cm) 2.46 Hauteur (cm) 0.80 0.40 0.50 Resistivite 1 (Ω.cm) 43 / 19 Resistivite 2 (Ω.cm) 5380 447 179

Brazing tests (Ultrasounds) 40*24*8 mm3 8*24*8 mm3 Ag-Cu-Ti (780 °C) Crack in SiC Propagation in 55% of the tile Brazed joint → OK Lack of bonding at the edge

Brazing tests (Microscopy)

Brazing tests (Program) Brazing at low temperature Au-Ge Alloy at 356 °C Brazing with grooves Ag-Cu-Ti Alloy at 780°C Brazing with a molybdenum sheet Stress absorber Ultrasounds + Microscopy + Mechanical tests