Prochaines Etapes des Capteurs CMOS Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

Trends for Pixel Sensor Development CCD (Charge Coupled Device) Future subatomic physics experiments need detectors  beyond the state of the art MAPS provide an attractive trade-off between granularity, material budget, readout speed, radiation tolerance and power dissipation Power consumption Limited for all experiments 3T pixel Analogue RO MAPS MAPS Development Trend Digital RO MAPS 3DIT High resistivity EPI 2D & 3D MAPS Hybrid Pixel Detector 22-24/06/2010 Journées VLSI IN2P3 IPHC christine.hu@ires.in2p3.fr

Development of MAPS for Charged Particle Tracking In 1999, the IPHC CMOS sensor group proposed the first CMOS pixel sensor (MAPS) for future vertex detectors (ILC) Numerous other applications of MAPS have emerged since then ~10-15 HEP groups in the USA & Europe are presently active in MAPS R&D Original aspect: integrated sensitive volume (EPI layer) and front-end readout electronics on the same substrate Charge created in EPI, excess carriers propagate thermally, collected by NWELL/PEPI , with help of reflection on boundaries with P-well and substrate (high doping) Q = 80 e-h / µm  signal < 1000 e- Compact, flexible EPI layer ~10–15 µm thick thinning to ~30–40 µm permitted Standard fabrication technology Cheap, fast turn-around Room temperature operation Attractive balance between granularity, material budget, radiation tolerance, read out speed and power dissipation BUT Very thin sensitive volume  impact on signal magnitude (mV!) Sensitive volume almost un-depleted  impact on radiation tolerance & speed Commercial fabrication (parameters)  impact on sensing performances & radiation tolerance NWELL used for charge collection  restricted use of PMOS transistors R.T. 22-24/06/2010 Journées VLSI IN2P3 IPHC christine.hu@ires.in2p3.fr

Progress on MAPS' Development 22-24/06/2010 Journées VLSI IN2P3 IPHC christine.hu@ires.in2p3.fr

Milestone of the Development 2009, an important year for CMOS pixel sensors' R&D: MIMOSA26 (Collaboration IRFU-IPHC) has been designed, fabricated and tested within the EUDET program MIMOSA26: a reticule size MAPS for the beam telescope EUDET Pixel array: 1152 x 576, 18.4 µm pitch Binary output, 10 k images / s Architecture: Pixel (Amp+CDS) array organised in // columns r.o. in the rolling shutter mode 1152 ADC, a 1-bit ADC (discriminator) / column Integrated zero suppression logic Remote and programmable Lab. and beam tests: 62 chips tested, yield ~75-90% ULTIMATE: final sensor for STAR detector upgrade Submission Oct. 2010  See I. Valin's talk 2D MAPS have reached necessary prototyping maturity for real scale applications : Beam telescopes allowing for sp ~ 2 μm & 106 particles/cm2/s (Beam results 06/2010) Vertex detectors requiring high resolution & very low material budget 21.5 mm 13.7 mm MIMOSA26 Active area: ~10.6 x 21.2 mm2 22-24/06/2010 Journées VLSI IN2P3 IPHC christine.hu@ires.in2p3.fr

MAPS: A Long Term R&D Main objective: ILC, with staggered performances MAPS applied to other experiments with intermediate requirements EUDET 2007/2009 Beam Telescope EUDET (R&D for ILC, EU project) STAR (Heavy Ion physics) CBM (Heavy Ion physics) ILC (Particle physics) HadronPhysics2 (generic R&D, EU project) AIDA (generic R&D, EU project) FIRST (Hadron therapy) ALICE/LHC (Heavy Ion physics) EIC (Hadronic physics) CLIC (Particle physics) SuperB (Particle physics) … STAR 2012 Solenoidal Tracker at RHIC ILC >2020 Internatinal Linear Collider CBM 2016 Compressed Baryonic Matter  Spinoff: Interdisciplinary Applications, biomedical, space … 22-24/06/2010 Journées VLSI IN2P3 IPHC christine.hu@ires.in2p3.fr

Prototype R&D  Real Scale Detector R&D 22-24/06/2010 Journées VLSI IN2P3 IPHC christine.hu@ires.in2p3.fr

R&D Directions (1) Large surface detector  minimize dead zone AIDA, CBM, EIC, biomedical imaging Surface > reticle size (~2x2 cm²) Stitching technique Technologies: XFAB 0.35 µm Tower 0.18 µm Problems: Process: yield / wafer Electronics: cap vs RO speed 22-24/06/2010 Journées VLSI IN2P3 IPHC christine.hu@ires.in2p3.fr

R&D Directions (2) PLUME (Pixelated Ladder with Ultra-low Material Embedding) Project Study a double-sided detector ladder motivated by the R&D for the ILD vertex detector at ILC Material budget <~0.3%XO Mechanical investigation Electrical investigation EMC : Electro-Magnetic Compatibility Power pulsing Data transmission (few Gbit/ladder) Optical link? SERWIETE (SEnsor Raw Wrapped In an Extra Thin Envelope) Project Motivated by HadronPhysics2, FP7 Sensor assembly mounted on flex and wrapped in  polymerised film with <0.15 % Xo for 1 unsupported  layer (sensors – flex cable – film) to evaluate the possibility of mounting a supportless  ladder on a cylindrical surface like a beam pipe (used  as mechanical support). Proof of principle expected in 2012  Collaboration with IMEC Fully functional microprocessor chip in flexible plastic envelope. Courtesy of Piet De Moor, IMEC company, Belgium 22-24/06/2010 Journées VLSI IN2P3 IPHC christine.hu@ires.in2p3.fr

R&D Directions (3): R&D on Microelectronics Design Requests by projects in real conditions: Pixel design: Advanced processes: High resistivity EPI layer (thickness, R) Pitch, size  Optimisation: Charge collection efficiency Resolution Radiation hardness Common submission IRFU-IPHC Elongated pixel Matrix for resolution Matrix for time stamp 22-24/06/2010 Journées VLSI IN2P3 IPHC christine.hu@ires.in2p3.fr

R&D Directions (3): R&D on Microelectronics Design Requests by projects in real conditions: Pixel design Integration ADC with pixel array  see F. Morel's talk 3D-MAPS  see O. Torheim's talk Intelligent data processing blocks (DSP in chip?) Cluster reconstruction (track position) Data compression SEU, SEL free circuit, ex. memory Slow control & Data acquisition system  see C. Santos's talk Power supply block  power management? Data transmission  optical trans-receiver Club 0.35/0.13 22-24/06/2010 Journées VLSI IN2P3 IPHC christine.hu@ires.in2p3.fr

Conclusion After 10 year, 2D-MAPS R&D reaches its maturity for real scale applications R&D continues: new performance scale accessible with emergent CMOS fabrication technology allowing to fully exploit the potential of MAPS approach CBM, ALICE/LHC, EIC, CLIC, SuperB, …  System integration (PLUME , SERWIETE) + Intelligent data processing + data transmission Mediate & long term objective: 3D sensors mainly motivated by RO < few µs Ultimately: expect to become the best performing pixel technology ever …? 22-24/06/2010 Journées VLSI IN2P3 IPHC christine.hu@ires.in2p3.fr