BAND GAP ENGINEERING Trends in cubic UC parameters and Eg As a function of composition x for the solid solution ternary semiconductor AlxGa1-xAs.

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Presentation transcript:

BAND GAP ENGINEERING Trends in cubic UC parameters and Eg As a function of composition x for the solid solution ternary semiconductor AlxGa1-xAs A solid solution implies a random distribution of Al and Ga in the zinc blende type lattice (isomorphous substitution)

BAND GAP ENGINEERING The roughly linear dependence of the physical properties on composition is known as Vegard’s law and proves that the distribution of the Al and Ga is random P(AlxGa1-xAs) = xP(AlAs) + (1-x)P(GaAs) Any physical property is the atomic fraction weighted average of the two end members

BAND GAP ENGINEERING Band gap engineering enables a range of designer optical and electronic devices to be fabricated