From Principles of Electronic Materials and Devices, Third Edition, S From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
From Principles of Electronic Materials and Devices, Third Edition, S From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
From Principles of Electronic Materials and Devices, Third Edition, S From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
From Principles of Electronic Materials and Devices, Third Edition, S From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
From Principles of Electronic Materials and Devices, Third Edition, S From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
(a) Energy band diagram of a metal (a) Energy band diagram of a metal. (b) In the absence of a field, there are as many electrons moving right as there are moving left. The motions of two electrons at each energy cancel each other as for a and b. (c) In the presence of a field in the x direction, the electron a accelerates and gains energy to a’ where it is scattered to an empty state near EFO but moving in the -x direction. The average of all momenta values is along the +x direction and results in a net electrical current. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
From Principles of Electronic Materials and Devices, Third Edition, S From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
From Principles of Electronic Materials and Devices, Third Edition, S From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
From Principles of Electronic Materials and Devices, Third Edition, S From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
From Principles of Electronic Materials and Devices, Third Edition, S From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
From Principles of Electronic Materials and Devices, Third Edition, S From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
From Principles of Electronic Materials and Devices, Third Edition, S From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
The E-k diagram of a direct bandgap semiconductor such as GaAs The E-k diagram of a direct bandgap semiconductor such as GaAs. The E-k curve consists of many discrete points each point corresponding to a possible state, wavefunction y k(x), that is allowed to exist in the crystal. The points are so close that we normally draw the E-k relationship as a continuous curve. In the energy range Ev to Ec there are no points (yk(x) solutions). From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
a b Reverse biased pn junction. (a) Minority carrier profiles and the origin of the reverse current. (b) Hole PE across the junction under reverse bias From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Energy band diagrams for a pn junction under (a) open circuit and (b) forward bias From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)