Electronic structure of the SiO2 slab

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Presentation transcript:

Electronic structure of the SiO2 slab Obtained through constructing a periodic system in z direction Obtained by projecting out states associated with Al and n-Si atoms

Modification of the Hamiltonian in the SiO2 region Scale function used for modification of the Hamiltonian Current density as a function of scale function parameter

IV curves for different doping densities With original Hamitonian With modified Hamiltonian

Number of Channels in the Al and n-Si leads Al lead

Tunneling coefficients T(kx,ky) of MOS WKB result for a model barrier LDA result for a real MOS structure