VLSI Design CMOS Layout

Slides:



Advertisements
Similar presentations
EE466: VLSI Design Lecture 7: Circuits & Layout
Advertisements

CMOS Layers n-well process p-well process Twin-tub process ravikishore.
VLSI Design Circuits & Layout
Lecture 1: Circuits & Layout
Design and Implementation of VLSI Systems (EN0160) Sherief Reda Division of Engineering, Brown University Spring 2007 [sources: Weste/Addison Wesley]
Introduction to CMOS VLSI Design Lecture 1: Circuits & Layout
Salman Zaffar IqraUniversity, Spring 2012
VLSI Design Circuits & Layout
Design and Implementation of VLSI Systems (EN1600) lecture05 Sherief Reda Division of Engineering, Brown University Spring 2008 [sources: Weste/Addison.
Introduction to CMOS VLSI Design Circuits & Layout
Introduction Integrated circuits: many transistors on one chip.
Z. Feng VLSI Design 1.1 VLSI Design MOSFET Zhuo Feng.
Module-3 (MOS designs,Stick Diagrams,Designrules)
Modern VLSI Design 3e: Chapter 2 Copyright  1998, 2002 Prentice Hall PTR Topics n Design rules and fabrication. n SCMOS scalable design rules. n Stick.
EE4800 CMOS Digital IC Design & Analysis
Introduction to CMOS VLSI Design CMOS Fabrication and Layout Harris, 2004 Updated by Li Chen, 2010.
VLSI Design Lecture 4-b: Layout Extraction Mohammad Arjomand CE Department Sharif Univ. of Tech.
Introduction EE1411 Design Rules. EE1412 3D Perspective Polysilicon Aluminum.
STICK DIAGRAM EMT251. Schematic vs Layout In Out V DD GND Inverter circuit.
CMOS Fabrication nMOS pMOS.
STICK DIAGRAM EMT251. Schematic vs Layout In Out V DD GND Inverter circuit.
Purpose of design rules:
CMOS VLSI Design Circuits & Layout. CMOS VLSI DesignSlide 2 Outline  A Brief History  CMOS Gate Design  Pass Transistors  CMOS Latches & Flip-Flops.
1 Overview of Fabrication Processes of MOSFETs and Layout Design Rules.
CMOS VLSI Fabrication.
STICK DIAGRAM EMT251. Schematic vs Layout In Out V DD GND Inverter circuit.
Layout design rules. 2 Introduction  Layout rules is also referred as design rules.  It is considered as a prescription for preparing photomasks. 
EE141 Manufacturing 1 Chapter 2 Manufacturing Process and CMOS Circuit Layout 1 st rev. : March 7, nd rev. : April 10, 2003.
Stick Diagrams Stick Diagrams electronics.
Lecture 1: Circuits and Layout National Chiao Tung University
UNIT II CIRCUIT DESIGN PROCESSES
Cell Design Standard Cells Datapath Cells General purpose logic
CMOS VLSI Design Lecture 2: Fabrication & Layout
1. Introduction. Diseño de Circuitos Digitales para Comunicaciones Introduction Integrated circuits: many transistors on one chip. Very Large Scale Integration.
2. Circuits & Layout. Diseño de Circuitos Digitales para Comunicaciones Outline A Brief History CMOS Gate Design Pass Transistors CMOS Latches & Flip-Flops.
S.N.Bhat, Faculty, Dept. of E&C Engineering, M.I.T Manipal
CHAPTER 4: MOS AND CMOS IC DESIGN
IC Manufactured Done by: Engineer Ahmad Haitham.
Day 12: October 4, 2010 Layout and Area
THE CMOS INVERTER.
Engr. Noshina Shamir UET, Taxila
Topics Design rules and fabrication SCMOS scalable design rules
Layout of CMOS Circuits
Lecture 19: SRAM.
Subject Name: Fundamentals Of CMOS VLSI Subject Code: 10EC56
Geometric Design Rules
STICK Diagrams UNIT III : VLSI CIRCUIT DESIGN PROCESSES VLSI DESIGN
Chapter 1 & Chapter 3.
Chapter 4 Interconnect.
VLSI Design MOSFET Scaling and CMOS Latch Up
Design Rules.
Chapter 10: IC Technology
LEC 3.2 LAYOUT D E S I G N R U L E S & DESIGN RULE CHECKER (DRC)
Introduction to Layout Inverter Layout Example Layout Design Rules
2. Introduction to Design Rules
Layout of CMOS VLSI Circuits
Layout of CMOS VLSI Circuits
INTRODUCING MICROWIND
VLSI Lay-out Design.
Where are we? Lots of Layout issues Line of diffusion style
V.Navaneethakrishnan Dept. of ECE, CCET
Chapter 10: IC Technology
ECE 424 – Introduction to VLSI Design
EE4271 VLSI Design, Fall 2016 VLSI Channel Routing.
CMOS Layers n-well process p-well process Twin-tub process.
Chapter 10: IC Technology
Chapter 6 (I) CMOS Layout of Complexe Gate
Lecture 1: Introduction
Presentation transcript:

VLSI Design CMOS Layout Engr. Noshina Shamir UET, Taxila

CMOS Layout Layout design rules describe how small features can be and how closely they can be reliably packed in a particular manufacturing process. Lambda-based rules are necessarily conservative because they round up dimensions to an integer multiple of lambda. Designers often describe a process by its feature size. Feature size refers to minimum transistor length, so lambda is half the feature size. 1: Circuits & Layout

The power and ground lines are often called supply rails. The rules describe the minimum width to avoid breaks in a line, minimum spacing to avoid shorts between lines, and minimum overlap to ensure that two layers completely overlap. Transistor dimensions are often specified by their Width/Length (W/L) ratio. In a 0.6 µm process, this corresponds to an actual width of 1.2 µm and a length of 0.6 µm. In digital systems, transistors are typically chosen to have the minimum possible length because short-channel transistors are faster, smaller, and consume less power. The power and ground lines are often called supply rails. 1: Circuits & Layout

Layout Design Rules Metal and diffusion have minimum width and spacing of 4 l . Contacts are 2 l × 2 l and must be surrounded by 1 l on the layers above and below. Polysilicon uses a width of 2 l 1: Circuits & Layout

Polysilicon overlaps diffusion by 2 l where a transistor is desired and has a spacing of 1 l away where no transistor is desired. Polysilicon and contacts have a spacing of 3 l from other polysilicon or contacts. N-well surrounds pMOS transistors by 6 l and avoids nMOS transistors by 6 l. 1: Circuits & Layout

Simplified Lambda based Design Rules 1: Circuits & Layout

Example: Inverter 1: Circuits & Layout

Example: NAND3 Horizontal N-diffusion and p-diffusion strips Vertical polysilicon gates Metal1 VDD rail at top Metal1 GND rail at bottom 32 l by 40 l 1: Circuits & Layout

Stick Diagrams Stick diagrams help plan layout quickly Need not be to scale Draw with color pencils or dry-erase markers 1: Circuits & Layout

Wiring Tracks A wiring track is the space required for a wire 4 l width, 4 l spacing from neighbor = 8 l pitch Transistors also consume one wiring track 1: Circuits & Layout

Well spacing Wells must surround transistors by 6 l Implies 12 l between opposite transistor flavors Leaves room for one wire track 1: Circuits & Layout

Area Estimation Estimate area by counting wiring tracks Multiply by 8 to express in l 1: Circuits & Layout

Example: O3AI Sketch a stick diagram for O3AI and estimate area 1: Circuits & Layout

Example: O3AI Sketch a stick diagram for O3AI and estimate area 1: Circuits & Layout

Example: O3AI Sketch a stick diagram for O3AI and estimate area 1: Circuits & Layout