Herb's Electron Devices

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Presentation transcript:

Herb's Electron Devices

Herb's Electron Devices: Herb's Bipolar Transistor 670 GHz amplifier 300 GHz PLL 614 GHz VCO 204 GHz digital logic ? ...plenty of steam left...

Herb's Electron Devices: nanometers & 6.1 angstrom What will the ultimate (4nm ???) FET look like ? At 4 nm gate length, the quantum well had better be < 2 nm thick. ...If III-V, it probably will have an InAs channel How do wells work at this thickness ? Brar, Kroemer, Ibbetson, English APL, June 1993 ...but Sakaki says: "terrible mobility" ...and Solomon says: "not enough charge". Perhaps anisotropic (L-X-D) valleys give more charge and mobility ? Perhaps quantum confinement in D-valleys (Si), lets an indirect-gap material emit light ? Herb had lots to say, about this. ...seems like a good idea... ...well, indeed it was ! ...and gave tremendous guidance. Brar, Kroemer, English. Journal Crystal Growth 1993

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