Imaging and modeling diffusion to defects in GaAs Tim Gfroerer,Davidson College, Davidson, NC with Mark Wanlass, National Renewable Energy Lab, CO Diffusion.

Slides:

Advertisements

Similar presentations

Study of Radiative and Heat-Generating Recombination in GaAs Ryan Crum and Tim Gfroerer, Davidson College, Davidson, NC Mark Wanlass, National Renewable.

Advertisements

II. Basic Concepts of Semiconductor OE Devices

Defects in solar cell materials: the good, the bad, and the ugly Tim Gfroerer Davidson College, Davidson, NC with Yong Zhang University of Charlotte.

Charge carriers must move to accommodate the bias-dependent depletion layer edge in a diode. Meanwhile, the capacitance depends on the position of the.

Conclusions and Acknowledgements Theoretical Fits Novel Materials for Heat-Based Solar Cells We are studying a set of materials that may be useful for.

Radiative efficiency of light-emitting materials Tim Gfroerer Davidson College, Davidson, NC - Funded by Research Corporation and the Petroleum Research.

100 µm Defect-related recombination and free-carrier diffusion near an isolated defect in GaAs Mac Read and Tim Gfroerer, Davidson College, Davidson, NC.

Solar Energy- Photovoltaics (solar cells)

A-Si:H application to Solar Cells Jonathon Mitchell Semiconductors and Solar Cells.

Photoluminescence of Amorphous Silicon. Overview l Amorphous Silicon l The Problem l Photoluminescence l Conclusion.

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Optical Properties and Superconductive Materials.

Chapter 8 Thin Film Solar Cells July 12, 2015.

Solar Cells Outline. Single-Junction Solar Cells. Multi-Junction Solar Cells.

Renewable energy. Where does electricity come from? First of all, what is electricity?

Stretched exponential transport transients in GaP alloys for high efficiency solar cells Dan Hampton and Tim Gfroerer, Davidson College, Davidson, NC Mark.

Fig 2a: Illustration of macroscopic defects Diffusion lengths are calculated by the equation where μ is the mobility of electron with literature value.

Solar Cells, Sluggish Capacitance, and a Puzzling Observation Tim Gfroerer Davidson College, Davidson, NC with Mark Wanlass National Renewable Energy Lab,

ECE 4339 L. Trombetta ECE 4339: Physical Principles of Solid State Devices Len Trombetta Summer 2007 Chapter 9: Optoelectronic Devices.

ECE 340 Lecture 27 P-N diode capacitance

Light, Mirrors, and Lenses O 4.2 Reflection and Mirrors.

Yale university Photovoltaic Properties of a Revolutionary New Solar Cell Drew Mazurek Advisor: Jerry Woodall April 30, 2002.

When defects are present in a semiconductor, intermediate energy levels are formed allowing carriers to “step” down to lower energy levels and recombine.

TIM GFROERER, Davidson College Davidson, NC USA

Modeling defect level occupation for recombination statistics Adam Topaz and Tim Gfroerer Davidson College Mark Wanlass National Renewable Energy Lab Supported.

The contribution from The contribution from photoluminescence (PL) Gordon Davies, King’s College London.

Concave Mirrors. Objectives Know the three principal rays for a concave mirror. Use the principal rays to locate the image of an object in front of a.

NEEP 541 Ionization in Semiconductors - II Fall 2002 Jake Blanchard.

Time-Resolved Photoluminescence Spectroscopy of InGaAs/InP Heterostructures* Colleen Gillespie and Tim Gfroerer, Davidson College, Davidson, NC Mark Wanlass,

While lattice-matched Ga 0.51 In 0.49 P on GaAs has the ideal bandgap for the top converter in triple- junction GaAs-based solar cells, more complex designs.

Photocapacitance measurements on GaP alloys for high efficiency solar cells Dan Hampton and Tim Gfroerer, Davidson College, Davidson, NC Mark Wanlass,

Mapping free carrier diffusion in GaAs with radiative and heat- generating recombination Tim Gfroerer and Ryan Crum Davidson College, Davidson, NC with.

LIFETIMES AND DIFFUSION LENGTHS A STUDY IN SEMICONDUCTOR PHYSICS Ashley Finger and Dr. Tim Gfroerer Davidson College.

How does diffusion affect radiative efficiency measurements? Caroline Vaughan and Tim Gfroerer, Davidson College, Davidson, NC Mark Wanlass, National Renewable.

Using the model and algorithm shown to the right, we obtain the theoretical images above. These images, with A=4.2*10 7 cm 3 /s (defect pixel) and A=8.2*10.

Module 2/7: Solar PV Module Technologies. Module 1 : Solar Technology Basics Module 2: Solar Photo Voltaic Module Technologies Module 3: Designing Solar.

ECEE 302: Electronic Devices

ENGR 1181 First-Year Engineering Program College of Engineering Engineering Education Innovation Center First-Year Engineering Program Solar Cell Lab.

Luminescence basics Types of luminescence

Introduction to semiconductor technology. Outline –4 Excitation of semiconductors Optical absorption and excitation Luminescence Recombination Diffusion.

ENGR 1181 College of Engineering Engineering Education Innovation Center Solar Cell Lab 5 Intro.

Photoluminescence and Photocurrent in a Blue LED Ben Stroup & Timothy Gfroerer, Davidson College, Davidson, NC Yong Zhang, University of North Carolina.

Overview of Photosynthesis

Mitsuru Imaizumi HTV-5 Spacecraft Power System, Kyusyu Inst. Tech. Dec. 11, 2015.

Imaging and modeling diffusion to isolated defects in a GaAs/GaInP heterostructure Tim Gfroerer, Mac Read, and Caroline Vaughan, Davidson College, Davidson,

Defect-related trapping and recombination in metamorphic GaAs 0.72 P 0.28 grown on GaAs Tim Gfroerer, Peter Simov, and Brant West, Davidson College, Davidson,

How does diffusion affect radiative efficiency measurements? Caroline Vaughan and Tim Gfroerer, Davidson College, Davidson, NC Mark Wanlass, National Renewable.

Carrier generation and recombination A sudden increase in temperature increases the generation rate. An incident burst of photons increases the generation.

Thermally activated radiative efficiency enhancement in a GaAs/GaInP heterostructure* Brant West and Tim Gfroerer, Davidson College Mark Wanlass, National.

ספרות עזר : פרופ ' אדיר בר - לב, מוליכים למחצה והתקנים אלקטרוניים, עמ ' P.A. Tipler, Modern Physics, pp Mc Kelvey, Solidstate and Semiconductor.

Issued: May 5, 2010 Due: May 12, 2010 (at the start of class) Suggested reading: Kasap, Chapter 5, Sections Problems: Stanford University MatSci.

Ashida Laboratory Keita Miyagawa 1 Carrier dynamics evaluation in the photoelectric device from the terahertz electromagnetic wave.

Photovoltaic Module Characterization using Electroluminescence J.L. Crozier, E.E. van Dyk, F.J. Vorster Energy Postgraduate Conference 2013.

It converts light energy into electrical energy.

PHOTOSYNTHESIS.

Light, Mirrors, and Lenses

Evaluation of Recombination Velocity at Grain Boundaries in Poly-Si Solar Cells with Laser Beam 指導老師：林克默博士學生：楊顯奕報告日期：

(WP2) Characterization of Novel Materials for APDs

Chapter 4 Excess Carriers in Semiconductors

Defect-related recombination near an isolated defect in GaAs Tim Gfroerer,Davidson College, Davidson, NC with Mark Wanlass, National Renewable Energy.

An optical technique for measuring surface recombination velocity

Reciprocal capacitance transients

Dan Hampton and Tim Gfroerer , Davidson College, Davidson, NC

Mitsuru Imaizumi Space Solar Cells -- II -- SLATS

Recombination in low-bandgap InGaAs Tim Gfroerer Davidson College, Davidson, NC with Mark Wanlass National Renewable Energy Lab, CO ~ Supported by.

Photovoltaic Research Laboratory (PVRL) Prof. Ebong

J. Peter Campbell and Tim Gfroerer Davidson College, Davidson, NC

Mac Read and Tim Gfroerer, Davidson College, Davidson, NC

Presentation transcript:

Imaging and modeling diffusion to defects in GaAs Tim Gfroerer,Davidson College, Davidson, NC with Mark Wanlass, National Renewable Energy Lab, CO Diffusion to defects impairs solar cell performance, but the impairment depends on the intensity of the incident light … + Low Excitation D Defect - diffusion length d Photoluminescence images centered on a defect in GaAs Modeling Results As the laser intensity is increased, photo-excited charge carriers recombine before reaching the defect. D - + High Excitation d