Defect-related recombination near an isolated defect in GaAs Tim Gfroerer,Davidson College, Davidson, NC with Mark Wanlass, National Renewable Energy Lab, CO Using photoluminescence imaging and measurements of radiative efficiency, we seek to understand how diffusion to defects affects recombination losses in solar cell materials. Photoluminescence Images of the defect 100 μm Radiative efficiency measurements on and off of the defect Defect-related Density of States (DOS) Ev Ec Energy Valence Band Conduction Band defect levels DOS functions yield these theoretical fits