Molecular Beam Epitaxy (MBE) C Tom Foxon

Slides:



Advertisements
Similar presentations
Aretouli E. Kleopatra 20/2/15 NCSR DEMOKRITOS, Athens, Greece
Advertisements

Reflection High Energy Electron Diffraction Wei-Li Chen 11/15/2007.
Electron Spectroscopies of InN grown by HPCVD Department of Physics and Astronomy Georgia State University Atlanta, Georgia Rudra P. Bhatta Solid State.
Nitride Superlattice Thin Films for Superhard Coatings Ramou Akin-Cole MRSEC Program 2004 Advisor: Paul Salvador Graduate Student: Nitin Patel.
Another “Periodic” Table!. Growth Techniques Ch. 1, Sect. 2, YC Czochralski Method (LEC) (Bulk Crystals) –Dash Technique –Bridgeman Method Chemical Vapor.
Techniques of Synthesizing Wafer-scale Graphene Zhaofu ZHANG
Specs and Design Options for a 8”-flat-panel MCP-PMT Fabrication Facility Dean Walters Argonne National Laboratory.
Structural and phase composition features of carbon films grown by DC PECVD process A.A. Zolotukhin, A.P. Volkov, A.O. Ustinov, A.N. Obraztsov, Physics.
Liang He, Lei Ma, and Frank Tsui
1 Properties of GaN Films Grown by Atomic Layer Deposition Using Low-temperature III-nitride Interlayers J. R. Gong Department of Materials Science and.
1MBEGROWTHANDINSTRUMENTATION. 2MBEGROWTHANDINSTRUMENTATION MBE GROWTH AND INSTRUMENTATION Thesis Proposal Outline for the Degree of Master of Science.
Molecular Magnet: an Example of STM Application J. Wu Phys. Dept. C203 course.

INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #5.
Thin Film Deposition Prof. Dr. Ir. Djoko Hartanto MSc
Quantum Dots. Optical and Photoelectrical properties of QD of III-V Compounds. Alexander Senichev Physics Faculty Department of Solid State Physics
High Brightness Light Emitting Diodes Chapter 1 Chapter 2 屠嫚琳.
Aaron Vallett EE 518 April 5 th, 2007 Principles and Applications of Molecular Beam Epitaxy Instructor: Dr. J. Ruzyllo.
Optical properties and carrier dynamics of self-assembled GaN/AlGaN quantum dots Ashida lab. Nawaki Yohei Nanotechnology 17 (2006)
반도체 제작 공정 재료공정실험실 동아대학교 신소재공학과 손 광 석 隨處作主立處開眞
STRUCTURE AND MAGNETIC PROPERTIES OF ULTRA-THIN MAGNETIC LAYERS
MOCVD Basics & Applications
MSE 576 Thin Films 1 of xx Molecular Beam Epitaxy 09/26/2008 MSE 576: Thin Films Deepak Rajput Graduate Research Assistant Center for Laser Applications.
Epitaxy: Application to Polarized Emitters
Preparation of films and their growth (a) Vacuum evaporation (b) Magnetron sputtering (c) Laser abrasion (d) Molecular beam epitaxy (e) Self-assembled.
Preparation of Clean III-V Semiconductor Surfaces for NEA Photocathodes Yun Sun 1, 2, Zhi Liu 3, Francisco Machuca 3, Piero Pianetta 1 and William E. Spicer.
Molecular Beam Epitaxy (MBE)
X-rays techniques as a powerful tool for characterisation of thin film nanostructures Elżbieta Dynowska Institute of Physics Polish Academy of Sciences,
AlGaN/InGaN Photocathodes D.J. Leopold and J.H. Buckley Washington University St. Louis, Missouri, U.S.A. Large Area Picosecond Photodetector Development.
Nanowires and Nanorings at the Atomic Level Midori Kawamura, Neelima Paul, Vasily Cherepanov, and Bert Voigtländer Institut für Schichten und Grenzflächen.
Fabrication of oxide nanostructure using Sidewall Growth 田中研 M1 尾野篤志.
D.-A. Luh, A. Brachmann, J. E. Clendenin, T. Desikan, E. L. Garwin, S. Harvey, R. E. Kirby, T. Maruyama, and C. Y. Prescott Stanford Linear Accelerator.
Reminders Quiz#2 and meet Alissa and Mine on Wednesday –Quiz covers Bonding, 0-D, 1-D, 2-D, Lab #2 –Multiple choice, short answer, long answer (graphical.
National Science Foundation GOALI: Epitaxial Growth of Perovskite Films and Heterostructures by Atomic Layer Deposition and Molecular Beam Epitaxy John.
Department of Synchrotron Radiation Research Lund University
XI. Reflection high energy electron diffraction
April 27, O’Dwyer, C. et al. Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light emitting devices. Nature.
Epitaxial superconducting refractory metals for quantum computing
Polarized Photocathode Research Collaboration PPRC R
Center for Materials for Information Technology an NSF Materials Science and Engineering Center Substrate Preparation Techniques Lecture 7 G.J. Mankey.
Materials Integration of III-V Compounds for Electronic Device Applications The funding for this project has provided us with the means to understand the.
Conductive epitaxial ZnO layers by ALD Conductive epitaxial ZnO layers by ALD Zs. Baji, Z. Lábadi, Zs. E. Horváth, I. Bársony Research Centre for Natural.
Thin Film Deposition. Types of Thin Films Used in Semiconductor Processing Thermal Oxides Dielectric Layers Epitaxial Layers Polycrystalline Silicon Metal.
Mar 24 th, 2016 Inorganic Material Chemistry. Gas phase physical deposition 1.Sputtering deposition 2.Evaporation 3.Plasma deposition.
Scanning Tunneling Microscopy Studies of Single-Crystal Niobium Oxidation Natalie A. Kautz, Yichen Yu, Kevin D. Gibson.
High frequency photovoltaic ISB detectors in the near- and mid-IR SPIE Photonics West January 22, 2008 Daniel Hofstetter University of Neuchatel.
Two-dimensional (2D) materials have attracted the attention of many researchers. The first created 2D material was graphene, it was discovered in the early.
Deposition Techniques
Thin Film Deposition Processes
MBE growth of GaAs photcathodes for the Cornell ERL photoinjector and effect of roughness on emittance Ivan Bazarov Bruce Dunham Siddharth Karkare Xianghong.
UNDERGRADUATE COURSES USING THE SMU CLEAN ROOM
© 1997, Angus Rockett Section I Evaporation.
High-temperature ferromagnetism
Jari Koskinen, Sami Franssila
Ching-Rong “Ada” Chung Mentor: Dr. Jing Zhou Department of Chemistry
MBE Growth of Graded Structures for Polarized Electron Emitters
MBE Source Cells Types of cells by Our Cells Manufacturers
PVD & CVD Process Mr. Sonaji V. Gayakwad Asst. professor
Another “Periodic” Table!
1.6 Magnetron Sputtering Perpendicular Electric Magnetic Fields.
へき開再成長法により作製された(110)GaAs 量子井戸における表面原子ステップの観察
Atomic Picture of Crystal Surfaces
Yuanmin Shao, and Zuimin Jiang
Thickness & Composition
TopGaN Ltd. company profile
Semiconductors: A General Introduction
Molecular Beam Epitaxy
Metal Organic Chemical Vapour Deposition
Epitaxial Deposition
Yuanmin Shao, and Zuimin Jiang
Presentation transcript:

Molecular Beam Epitaxy (MBE) C Tom Foxon School of Physics and Astronomy, University of Nottingham Nottingham 2015

What is MBE? Growth of epitaxial films on a hot substrate from molecular beams under ultra-high vacuum conditions. III-V Semiconductors ( also used for gp IV, II-VIs, metals, oxides etc) Typical growth rates: one monolayer/sec (equivalent to a pressure of 10-6Torr) Nottingham 2015

MBE systems old and new Nottingham 2015

MBE schematic Nottingham 2015

MBE cells schematic Nottingham 2015 Typical effusion cell for Al, Ga etc. Nottingham 2015

Growth of GaAs from Ga & As2 C T Foxon and B A Joyce, Surface Science 64 (1977) 293 Nottingham 2015

Growth dynamics - RHEED Nottingham 2015

Growth dynamics - RHEED Nottingham 2015

Scanning tunnelling microscopy Atomic resolution using a tip close to the surface Nottingham 2015

Large area STM images Initial surface before growth after 3 Large area STM images Initial surface before growth after 3.5 MLs deposited Sudijono et al, J Crystal Growth 280 (1993) 247 Nottingham 2015

Superlattices All SL laser QW 8 MLs AlAs 8MLs GaAs 1ML= 0.28nm Nottingham 2015

MBE at Nottingham (1991 with John Orton) AlGaInN or III-Nitrides Spintronics - GaMnAs, CuMnAs etc. Amorphous III-Arsenide Nitrides Free standing AlGaN Photocathodes – with Photek Graphene-Boron Nitride Nottingham 2015

Nottingham 2015

Active species from the plasma OED (745nm) 869nm Source A Nottingham 2015

Morphology for growth on sapphire Nottingham 2015

Growth on GaN substrates Nottingham 2015

CuMnAs after annealing Nottingham 2015

Low temperature MBE growth of GaNAs RMS roughness is ~0.2nm Nottingham 2015

Measurements at Berkeley – Yu et al Nottingham 2015

Free standing cubic AlGaN Nottingham 2015

The worlds hotest MBE Nottingham 2015

Epitaxial graphene by heating SiC Nottingham 2015

Graphene grown from carbon on sapphire Nottingham 2015

Graphene grown from carbon on sapphire Nottingham 2015

Summary MBE gives excellent control of composition and thickness, with both in-situ and ex-situ characterisation In-situ monitoring with mass spectrometry for growth kinetics, with RHEED and STM for growth dynamics. Since coming to Nottingham, we have extended the materials grown by MBE to include, nitrides, spintronics amorphous nitrides, bulk AlGaN and photocathodes (at Photek). The latest venture is graphene-boron/nitride Nottingham 2015

Feedback: Privacy Policy Feedback
Do Not Sell My Personal Information
About project: SlidePlayer Terms of Service

© 2025 SlidePlayer.com. Inc. All rights reserved.