Statistical Model for the Low-Frequency Noise of MOSFETs under Cyclo-stationary Excitation Inversion layer Trap Gate Oxide Interaction with the inversion layer Drain Current ID

Decrease in Average Noise Power The reason for the LF-noise decrease is twofold: i) The traps that contribute most to noise are the ones close to the bandgap center, where trap density is smaller; ii) the decreased contribution of traps close to the bandgap edge, where trap density is higher.

Increase in Variability (Standard Dev.)