Sensor probing (Summary)

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Presentation transcript:

Sensor probing (Summary) Mini-production Sensors 25 from Peregia Been used in previous module builds Biased sample of sensors 4 had higher current in sensor IV probe 3 used in modules 1 caused chip common mode noise problem 2 had mid-sensor opens (burns) Otherwise IV match well RH% at QTC 30-35% 50 from Pisa 10 have higher currents in IV probing 5 sensors have increased current large enough (>10mA) to cause a chip to have a large common mode noise Consistent with rate seen in previous production 10 have much lower (>2 times less) currents Pisa RH% during probing range from 10-50% Most of these sensors probed at >40% RH

Summary of Production 25 Modules Produced First sensor IV probed Sensors sorted into three groups Matching QTC measurements Higher IV than QTC measurements Lower IV than QTC measurements Modules are assembled with sensors with matching or higher QTC measurements First sensor bias bonded and IV measured Second sensor bias bonded and IV measured Module fully bonded, IV measured and module tested 20 modules produced with sensors with matching probe data One (1038) had 7mA extra current(micro-discharge) and CMN on one chip after module bonding Additional tests show both no extra current and no CMN, AND extra current and CMN All other modules had no CMN problem and only small changes in current (<0.5mA) 5 modules produced with sensors with higher IV 4 show micro-discharge large enough to cause a CMN on a chip as expected 2 show burnt mid-sensor opens

Slide layout First (near) Sensor IV Second (far) Sensor IV Module IV Following slides have following layout: First (near) Sensor IV Second (far) Sensor IV Module IV Results/Comments

Modules produced with higher IV measured at UCSB

30200020001016 Mid-sensor open burn seen in sensor 30210422067903, channel 285. CMN problem seen in chip 1 channel 38 due to sensor 30210422066202. CMN Noise problem begins at 90 V

Pictures of 30200020001016 Picture of mid-sensor open burn seen in sensor 30210422067903, channel 285. Picture of channel 38, sensor 30210422066202. CMN noise problem begins at 90 V

Noise of 30200020001016 Noise start increasing on channel 38 with 10 V bias Assume micro-discharge Noise on channel 38 at 100 V large enough to cause 5 ADC common mode noise on chip 1. Noise reaches maximum at 100 V

30200020001018 Mid-sensor open burn seen in sensor 30210422066223, channel 446. This may explain the increased current seen in UCSB IV probe and the decrease after module bonding. Channel has about half the average LED response.

Sensor mid-sensor open due to burn on Picture of 30200020001018 Sensor mid-sensor open due to burn on channel 446, sensor 30210422066223

30200020001030 Sensor scratched due probing of hybrid. Bias and guard rings damage. Now current lower (??). On initial powering, bias current high. CMN problem seen in chip 3, channel 308 due in sensor 30210420383228. As run, noise decreases and CMN problem stops.

Pictures of 30200020001030 Picture of channel 308, sensor 30210420383228 which cause CMN problem on chip 3. Scratch put into sensor while probing hybrid problem

30200020001031 CMN problem seen in chip 3, channel 336 due to sensor 30210422066202. Noise maximum at 240 V, and decreases below level to cause CMN problem.

Noise of 30200020001031 Channel 336 shows increasing noise with voltage Common mode noise on chip 3 reaches maximum at 250 V. Common mode noise decreases as voltage increase beyond 250 V. At 400 V, common mode noise gone. Noise on channel 336 at 12 ADC.

30200020001042 Micro-discharge problem seen in chip 1, channel 7-10 in sensor 302104845823. CMN on chip 1 starts at 450V. Increased noise seen earlier on channels 7-10

Noise of 30200020001042 Channels 7-10 show increased noise at 400 V. At 450V, chip 1 begins to show common mode noise

Modules produced with similar IV measured at UCSB

30200020001038 Initial test after bonding showed increased current and CMN problem (Channel 244-245, chip 2). Problem occurs at ~250 V. Multiple tests afterwards show currents predicted by probing and no CMN problem OR high currents and CMN problem. NOT UNDERSTOOD

Noise from 30200020001038 Channel 244-245 show increased noise in runs with high bias current. At 300 V, common mode noise seen in chip 2.

30200020001019 Grade A module. Short in sensor due to scratch not found in sensor probing

30200020001020 Grade B module. Mid sensor open due to burn not seen in sensor probing on sensor 3021042162821, channel 247

Sensor mid-sensor open due to burn on Picture of 30200020001020 Sensor mid-sensor open due to burn on channel 247, sensor 3021042162821

30200020001021 Grade A module. All faults found expected from sensor database.

30200020001022 Grade A module. All faults found expected from sensor database.

30200020001023 Grade A module. All faults found expected from sensor database.

30200020001024 Grade A module. All faults found expected from sensor database.

30200020001025 Grade A module. All faults found expected from sensor database.

30200020001027 Grade A module. 1 channel with slightly high noise (226, 2.75 ADC) not seen in sensor database

30200020001028 Grade A module. All faults found expected from sensor database.

30200020001029 Grade A module. 1 channel with slightly high noise (11, 3.8 ADC) not seen in sensor database

30200020001032 Grade A module. All faults found expected from sensor database.

30200020001033 Grade A module. All faults found expected from sensor database.

30200020001034 Grade A module. 1 channel with slightly high noise (191) not seen in sensor database

30200020001035 Grade A module. All faults found expected from sensor database.

30200020001036 Grade A module. All faults found expected from sensor database.

30200020001037 Grade A module. All faults found expected from sensor database.

30200020001039 Grade A module. All faults found expected from sensor database.

30200020001040 Grade A module. All faults found expected from sensor database.

30200020001041 Grade A module. All faults found expected from sensor database.

Conclusions Significant differences from QTC sensor probing have been found ~10% of sensors have current increases >20 mA from QTC prior to module assembly This is consistent with the rate of the chip CMN problem (micro-discharge) seen in productions Many sensors have much lower IV now Assume that RH% at sensor QTC cause of problem After 20 module tested, only one module showed any change in current seen in ProbingAssemblyBondingARC testingBurn-in when using sensors when sensor IV matched at UCSB Module showed regular current in some tests afterwards Pre-screening sensors would decrease significantly the number of bad modules made due to sensor issues. Testing time much reduced because much less repair/debug needed.