Kirigami Nanofluidics

Slides:



Advertisements
Similar presentations
Modeling the Action Potential in a Squid Giant Axon And how this relates to the beating of your heart.
Advertisements

Apparatus to Study Action Potentials
Structural Biology of Membrane Proteins Problems of structure determination & Membrane-specific solutions KcsA structure Mechanistic insights KvAP and.
Dynamical simulations of virus wrapping and budding T. Ruiz-Herrero 1, M. F. Hagan 2, E. Velasco 1 1.Universidad Autónoma de Madrid, Madrid, Spain 2.Brandeis.
Materials Research Science and Engineering Center William H. Butler University of Alabama-Tuscaloosa, DMR Update: January, 27, 2005 Commercialization.
Graphene-based Thermal Interface Materials (TIM) A proposal submitted to CTRC (Cooling Technologies Research Center) Principle investigators: Yong P. Chen.
Influence of Charge and Network Inhomogeneities on the Swollen-Collapsed Transition in Polyelectrolyte Nanogels Prateek Jha (Northwestern University) Jos.
APS March MeetingDallas, March 22, 2011 FACETING OF MULTICOMPONENT CHARGED ELASTIC SHELLS Rastko Sknepnek, Cheuk-Yui Leung, Liam C. Palmer Graziano Vernizzi,
COMPACT MODEL FOR LONG-CHANNEL SYMMETRIC DOPED DG COMPACT MODEL FOR LONG-CHANNEL SYMMETRIC DOPED DG Antonio Cerdeira 1, Oana Moldovan 2, Benjamín Iñiguez.
Voltage-Gating in Synthetic Nanopores Induced by Cobalt Ions Michael Sullivan, Undergraduate: George Mason University IM SURE Fellow, 2006 Dr. Zuzanna.
Computational Fracture Mechanics
Fig. 5.1 Physical structure of the enhancement-type NMOS transistor: (a) perspective view; (b) cross section. Typically L = 1 to 10 m, W = 2 to 500.
Vacuum Diode.
Diode. Introduction A diode is an electrical device allowing current to move through it in one direction with far greater ease than in the other.
Current members –Jeff Easley, PhD Candidate –Josh Katzenstein, PhD Candidate –Alfredo Clemente Cruz, Masters Candidate –Bobby Sankhagowit, Undergraduate.
BME 6938 Neurodynamics Instructor: Dr Sachin S. Talathi.
PRACTICAL ELECTRONICS MASTERCLASS (Mr Bell) 1. Light Emitting Diodes (LEDs) LEDs are used as indicator lamps in may devices and are becoming increasingly.
Weidong Zhu, Nengan Zheng, and Chun-Nam Wong Department of Mechanical Engineering University of Maryland, Baltimore County (UMBC) Baltimore, MD A.
Multiscale Simulation of Phase Change Memory (PCM) Manjeri P. Anantram, University of Washington, DMR O Ba Sr Si To probe the ultimate scalability.
The fourth element: characteristics, modelling and electromagnetic theory of the memristor by O. Kavehei, A. Iqbal, Y. S. Kim, K. Eshraghian, S. F. Al-Sarawi,
Signal Propagation. The negative electrode (cathode) is the stimulator. Review: About external stimulation of cells: At rest, the outside of the cell.
University of Alabama MRSEC William H. Butler DMR Theory of Tunneling Magnetoresistance Leads to New Discoveries with Potential Technological Impact.
Vanderbilt MURI meeting, June 14 th &15 th 2007 Band-To-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices.
Diode Circuit Analysis ENGI 242 ELEC February 2005ENGI 242/ELEC 2222 Diode Circuit Analysis –Graphical Analysis using Loadlines –Analytical Analysis.
Electronics sessional
Molecular Dynamics Study of Ballistic Rearrangement of Surface Atoms During Ion Bombardment on Pd(001) Surface Sang-Pil Kim and Kwang-Ryeol Lee Computational.
SAMPLE AND HOLD CIRCUIT. CIRCUIT CONSTRUCTION The circuit samples the input and holds the last sample until the input sampled again. The circuit has an.
Computational Mechanics JASS 2006 Survey of Wave Types and Characteristics Longitudinal Waves (For reminding only)  Pure longitudinal waves  Quasi-longitudinal.
Zener Diode Circuits for Power Supply Designs Section 4.4.
Magnetotransport Studies of Organic Spin Valves A. M. Goldman, University of Minnesota, DMR Graph of the resistance versus magnetic field at 100K.
Potential Dividers and their application as sensors Electricity Lesson 9.
Dynamical Modeling in Biology: a semiotic perspective Junior Barrera BIOINFO-USP.
CP 208 Digital Electronics Class Lecture 6 March 4, 2009.
Semiconductor Diode.
MOS Transistor Theory The MOS transistor is a majority carrier device having the current in the conducting channel being controlled by the voltage applied.
J.E. Sprittles (University of Oxford, U.K.) Y.D. Shikhmurzaev(University of Birmingham, U.K.) International Society of Coating Science & Technology Symposium,
Signal Propagation.
MoS2 RF Transistor Suki Zhang 02/15/17.
silicon drift detectors
Bennett McIntosh Adademy of the sciences of the Czech Republic Department of structure and Function of Proteins Nové Hrady, South Bohemia, Czech Republic.
OMEN: a Quantum Transport Modeling Tool for Nanoelectronic Devices
Neuron Model To model a neuron at the ionic level Modelling Goal
Objectives: Develop predictive atomistic models for CBRAM.
In-situ Crystallization and Morphological Evolution in Multicomponent Indium Oxide Thin Films NSF-MRSEC DMR Peter Voorhees and Vinayak Dravid,
Rectification and Diodes
Erik Luijten, Computational Soft Matter Lab
Channels & Transporters
Transport of ions across plasma membranes
Bipolar Processes Description
Height difference [nm]
Schematics 201 Lecture Topic: Electrical Symbols
Transistors (MOSFETs)
Materials Computation Center, University of Illinois
CNTFET, FinFET and MESFET Md. Rakibul Karim Akanda University of California Riverside, California, USA.
Modeling Self-assembled Hydrogel Scaffold for Hydrogen Generation
Presentation on Physics
THE RESISTOR Forward characteristic Reverse characteristic Circuit.
Semiconductor devices and physics
Sang-Pil Kim and Kwang-Ryeol Lee Computational Science Center
Controlling Dielectric Polarization via Molecular Design
Polyhedral Assembly of Heteroanionic Materials
Parameter Space for Amorphous Oxide Semiconductors (AOSs)
Fig. 3 Electrical characterization and TCAD simulations of 1D2D-FET.
Through the Looking Glass at the Atomic Scale
Optically Reconfigurable Dielectrics in Ultra-Thin Transistors
Controlled Mechanical Buckling for Origami-Inspired 3D Microstructures
Fractal Mechanical Structures David Srolovitz & Shu Yang (Seed 5)
Processing 2D Porous Polymers into Membranes via Exfoliation
Fig. 4 Transfer characteristics of the carristor.
Brain-Like Computing with Atomically Thin Materials
Presentation transcript:

Kirigami Nanofluidics NSF-MRSEC DMR-1121262 J. Huang, E. Luijten, M. Olvera de la Cruz, Northwestern University MRSEC Restacked films of exfoliated 2D nanosheets can function as massive nanofluidic channel arrays. In the previous reporting year, experiments by Huang and simulations by Luijten showed that cutting such membranes into asymmetric shapes leads to ionic current rectification (ICR). New work by Huang, Luijten, and Olvera de la Cruz clarifies the mechanism and shows new device designs. An analytical expression for the current-voltage characteristics of the system was derived, and the molecular dynamics simulation reported previously has been refined, leading to detailed quantitative agreement between theory, simulation, and experiment. We find the ICR is caused by concentration polarization (CP) over the asymmetric interfaces. The massively parallel device geometry allows CP to impact the system resistance at very low applied voltage. We leverage this mechanism to design nanofluidic diodes, variable rectifiers, and logic gates. Theory and MD work show that ICR is caused by CP at the asymmetric membrane-reservoir interfaces Restacked films of exfoliated 2D nanosheets can function as massive nanofluidic channel arrays. In the previous reporting year, experiments by Huang and simulations by Luijten showed that cutting such membranes into asymmetric shapes leads to ionic current rectification (ICR). New work by Huang, Luijten, and Olvera de la Cruz clarifies the mechanism and shows new device designs. An analytical expression for the current-voltage characteristics of the system was derived, and the molecular dynamics simulation reported previously has been refined, leading to detailed quantitative agreement between theory, simulation, and experiment. We find the ICR is caused by concentration polarization (CP) over the asymmetric interfaces. The massively parallel device geometry allows CP to impact the system resistance at very low applied voltage. We leverage this mechanism to design nanofluidic diodes, variable rectifiers, and logic gates. The new mechanistic understanding enables new device designs. Here, GO membrane cut into a cross shape shows tunable ICR ratio Gao et al, under review.