Summary of Key Results from the SLAC ESTB T-506 Irradiation Study FCAL Harware Meeting 25 May 2016 Bruce Schumm UCSC/SCIPP 1

Mauro Pivi SLAC, ESTB 2011 Workshop, Page 2 LCLS and ESA Use pulsed magnets in the beam switchyard to send beam in ESA. Mauro Pivi SLAC, ESTB 2011 Workshop, Page 2 2

Daughter Board Assembly Pitch adapter, bonds Sensor 1 inch 3 3

2 X0 pre-radiator; introduces a little divergence in shower Sensor sample Not shown: 4 X0 “post radiator” and 8 X0 “backstop”

December 2015 Exposure and Summary December 2015: Long, high-rate exposures of all four Si diode types (5 24hr days of ~20 Mrad/hr) Sensor Type Notable Exposures (Mrad) GaAs 20 SiC 80 Si PF 270, 570 Si NF 300 Si PC Si NC 290 Red indicates results available; others await evaluation Operated at 12-15 GeV at close to 1 nA 5 5

Charge Collection Apparatus Readout: 300 ns 2.3 MeV e- through sensor into scintillator Sensor + FE ASIC DAQ FPGA with Ethernet 6 6

Pulse-height distribution for 150V bias Median pulse height vs. bias Measurement time Pulse-height distribution for 150V bias Mean Pulse Shape Single-channel readout example for, e.g., N-type float-zone sensor Readout noise: ~300 electrons (plus system noise we are still addressing) Median pulse height vs. bias 7 7

GaAs Results 20 Mrad 8 8

GaAs Charge Collection (21 Mrad Exposure) VB = 600 V 9 9

GaAs Charge Collection (21 Mrad Exposure) Slice at VB=600 vs. function annealing temp 10 10

Compare to Direct Electron Radiation Results (no EM Shower) A bit better performance than direct result kGy Pre-anneal Post-anneal at room temp Georgy Shelkov, JINR 1000 kGy = 100 Mrad 11 11

SiC Results 80 Mrad Sensor provided by: Bohumir Zatko, Slovak Institute of Science 4H-SiC crystal geometry 12 12

SiC Charge Collection after 80 Mrad @600 V, ~25% charge collection loss (60C annealing) 80 Mrad Exposure 13 13

Si Diode Results 270 Mrad PF 300 Mrad NF P = p-type bulk N = n-type bulk F = Float Zone 14 14

PF Charge Collection after 270 Mrad @600 V, ~20% charge collection loss (60C annealing) VB = 600 V 15 15

Polynomial Fit for Temperature Dependent Current Sensor area = 0.025 cm2

Power Drawn(Watts) of BeamCal collapsed T = -7 ˚C T = 0 ˚C P_total = 4.467 W P_total = 11.01 W P_max = 1.86 mW P_max = 4.59 mW (for single 1mm2 pixel) (for single 1mm2 pixel)

Total Power Draw (Entire BeamCal Instrument) Operating Temperature (0C) Total Power Draw (W) Maximum for 1mm2 Pixel (mW) 15 56 23 7 25 10 11 4.6 -7 4.5 1.9

NF Charge Collection after 300 Mrad @600 V, ~55% charge collection loss (32C annealing) 19 19

Sensor area = 0.1 cm2 Temperature  -15 C 20 20

BACKUP 21 21

P-Type Float-Zone Sensor Reminder of results for 270 Mrad irradiation (about 3 years exposure) 22 22

IV Curves at a few Temperatures Sensor area = 0.025 cm2