TopGaN Ltd. company profile

Ownership structure 51% EuroCity II (company owned by Mr A. Kasprowiak) 34% Institute of High Pressure Physics 14% technology founders 1% others

TopGaN patents TopGaN has probably the most independent nitride patent portfolio compared to other nitride companies. Main patents: Epitaxy on bulk GaN substrates grown at high pressure Epitaxy of AlGaInN layers using PA MBE Surface preparation of GaN substrates Plasmonic substrates (patent pending) Non absorbing mirrors (patent pending) P-type co-doping of GaN (patent pending)

Facility GaN substrates 300m2 clean room Epitaxy growth: 2MBE + 4 MOVPE Laser processing 600m2 cleam room Testing + characterisation lab

GaN substrates grown by a combined method of HVPE (hydride vapour phase epitaxy) and high pressure (10 kbar) + TopGaN can produce the highest quality GaN substrates for LD manufacture. TopGaN GaN substrates allow the possibility of laser array manufacture – a USP

GaN substrates grown by a combined method of HVPE (hydride vapour phase epitaxy) and high pressure (10 kbar) 1 inch GaN substrates with ultra low dislocation density available today. 2 inch GaN substrates demonstrated (this is state-of-the-art). Production ramp of 2 inch GaN substrates to 10 wafers per month within 2 years. Potential further expansion is being considered Plan to introduce ISO9000 standard for GaN manufacturing

Epitaxy: MOVPE + MBE GaN epitaxy growth State-of-the-art nitride epitaxy growth facility. Innovative nitride R&D. Producing world-class device characteristics.