Details and Assumptions for Technology Requirements ITRS 2003 Factory Integration Chapter Electrostatic Discharge - Backup Section Details and Assumptions for Technology Requirements 2019/1/1 ITRS Factory Integration TWG

ITRS Factory Integration TWG Outline Problems Caused By Static Charge attraction of contamination electrostatic discharge (ESD) damage to devices and photomasks equipment malfunction due to ESD-generated electromagnetic interference (EMI) SEMI E129 – Guide to Assess and Control Electrostatic Charge in a Semiconductor Manufacturing Facility Conclusions 2019/1/1 ITRS Factory Integration TWG

Static Charge Problems: Contamination and ESD Yield Throughput Reticles Equipment Contamination Process Interruptions Wafers Integrated Circuits ESD Damage Static Charge + --- -- FPD Screens Pellicles 2019/1/1 ITRS Factory Integration TWG

Forces on a Contaminant Particle Near Charged Surfaces for 1000 V surfaces, the greatest force is electrostatic! gravitational aerodynamic Electrostatic 2019/1/1 ITRS Factory Integration TWG

Electrostatic Attraction 200mm vs. 300mm positive neutral negative 0.000 0.005 0.010 0.015 0.020 0.025 0.030 Rate of Contaminating (/cm2-hr) 300 mm 200 mm Polarity Dependence of ESA at One Fab Particle deposition 3-6 times higher for wafers at 10kV Particle deposition 30-60% greater at 300mm than 200mm 2019/1/1 ITRS Factory Integration TWG

Device ESD Failure Mechanisms Human Body Model human contact with a sensitive device Machine Model charged conductor contacting a sensitive device Charged Device Model device contacts ground when in an electric field device package is charged and device contacts ground 2019/1/1 ITRS Factory Integration TWG

Destruction of Silicon Due to ESD 2019/1/1 ITRS Factory Integration TWG

ESD Effects on Semiconductor Manufacturing Photomask Damage Due to ESD 1.5 m 2019/1/1 ITRS Factory Integration TWG

ESD Events Create Electromagnetic Interference (EMI) ESD Radiates Radio Waves and induces signals in microprocessors and metrology tools Scrambled Program Instructions Scrambled Data Confusing Error Messages Microprocessor Lockup Calibration Failures Apparent Software Bugs 2019/1/1 ITRS Factory Integration TWG

ITRS Factory Integration TWG EMI Events in Photo Ratio - 30:1 2019/1/1 ITRS Factory Integration TWG

Semiconductor Equipment and Materials International (SEMI) SEMI E129 :Guide to Assess and Control Electrostatic Charge in a Semiconductor Manufacturing Facility 2019/1/1 ITRS Factory Integration TWG

SEMI E129 Guide – Recommended Electrostatic Limits Year Node Electrostatic Discharge, nC Electrostatic Field, V/cm V/inch 2000 180 nm 2.5 - 10 200 500 2002 130 nm 2003 100 nm 2.0 1.5 375 125 300 2004 90 nm 1.0 100 250 2007 65 nm 0.5 70 175 2009 50 nm 0.25 50 125 2012 32 nm 0.125 35 88 2015 25 nm 0.1 25 63 2019/1/1 ITRS Factory Integration TWG

ITRS Technical Requirements - Electrostatics 2002 2003 Note: 2003 changes shown in bold 2019/1/1 ITRS Factory Integration TWG

ITRS Factory Integration TWG Conclusions Major elements of technology change are smaller device geometry, lower defect densities, larger wafers, faster equipment operating speeds, and more dependence on automation. All of these areas are adversely affected by the presence of static charge in the semiconductor factory. Static charge needs to be controlled before it becomes a barrier to new technology introduction, slows the ramping of new factories, or a costly learning experience. SEMI Standards is in the process of releasing E129 which contains electrostatic limits and measurement methods for the entire semiconductor facility. The technology requirements in the ITRS will solve the static problem in factory construction and in equipment design - before static charge can impact production. 2019/1/1 ITRS Factory Integration TWG