EE130/230A Discussion 8 Peng Zheng

MOS Operating Regions (n-type Si) Decrease VG toward more negative values  the gate electron energy increases relative to that in the Si decrease VG decrease VG Accumulation VG > VFB Electrons accumulated at Si surface Depletion VG < VFB Electrons depleted from Si surface Inversion VG < VT Surface inverted to p-type EE130/230A Fall 2013 Lecture 15, Slide 2 R. F. Pierret, Semiconductor Device Fundamentals, Fig. 16.5

Sample Problem- MOS Capacitor Energy Band Diagrams

Sample Problem- MOS Capacitor Energy Band Diagrams

Sample Problem- MOS Capacitor Energy Band Diagrams

Sample Problem- MOS Capacitor Energy Band Diagrams

Questions? HW#8 Quiz#3 Good Luck!