Last Lecture – MOS Transistor Review (Chap. #3)

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Presentation transcript:

Last Lecture – MOS Transistor Review (Chap. #3) 1/3/2019 Last Lecture – MOS Transistor Review (Chap. #3) Transistor Operation Regions & Large Signal Behavior saturation - Vgs>Vth & Vds>Vds(sat) ohmic - Vgs>Vth & Vds<Vds(sat) subthreshold - Vgs<Vth & Vds> 0.2V Small Signal Model low-frequency model Analog Circuit Design

Regions of Operation Saturation – Ohmic – Subthreshold – 1/3/2019 Regions of Operation Saturation – Ohmic – Subthreshold – * For p-channel MOSFET, use n-channel equations with p-channel parameters and invert the current Analog Circuit Design

Large Signal MOSFET Model 1/3/2019 Large Signal MOSFET Model where: VDS(sat) = Vov = µo = zero field mobility (cm2/V·s) Cox=gate oxide capacitance per unit area (F/cm2) λ = channel-length modulation parameter (V-1) Vt = Vt0 = zero bias threshold voltage γ = bulk threshold parameter (1/V0.5) 2|φf |= strong inversion surface potential (V) ID0 = process dependant parameter (A) n = subthreshold slope factor Analog Circuit Design

MOSFET Small-Signal Model 1/3/2019 MOSFET Small-Signal Model Complete Schematic Model Simplified Schematic Model Analog Circuit Design

Small-Signal Frequency Dependent Model 1/3/2019 Small-Signal Frequency Dependent Model Complete Model * The capacitor size varies with the region of operation and the transistor size * The parasitic capacitors are constant for a specific region of operation Analog Circuit Design

1/3/2019 Frequency Response Analog Circuit Design

Single Stage Amplifiers 1/3/2019 Single Stage Amplifiers Analog Circuit Design

Common Source Amplifier 1/3/2019 Common Source Amplifier Analog Circuit Design

Common Source Amplifier with Degeneration 1/3/2019 Common Source Amplifier with Degeneration Analog Circuit Design

1/3/2019 Common Gate Amplifier Analog Circuit Design

Common Drain Amplifier or Voltage Follower 1/3/2019 Common Drain Amplifier or Voltage Follower Analog Circuit Design