Transport Zuoan Li NorFERM-2008.

Slides:



Advertisements
Similar presentations
Lecture on DIFFUSION IN SOLIDS. Applications of Diffusion in Solids
Advertisements

Diffusion (continued)
Lecture
Lecture 3.
Statistical Thermodynamics of Defects in Solids May have a perfect crystal at 0 K, but otherwise defects will occur in the structure Important influence.
Chapter 6 Diffusion in Solids.
Chapter ISSUES TO ADDRESS... How does diffusion occur? Why is it an important part of processing? How can the rate of diffusion be predicted for.
Chapter ISSUES TO ADDRESS... How does diffusion occur? Why is it an important part of processing? How can the rate of diffusion be predicted for.
Fick’s Laws Combining the continuity equation with the first law, we obtain Fick’s second law:
Department of Chemistry University of Oslo Centre for Materials Science and Nanotechnology (SMN) FERMIO.
Solid State Diffusion-1
Lattice defects in oxides.
KJM5120 and KJM9120 Defects and Reactions
CHAPTER 6: DIFFUSION IN SOLIDS
CHAPTER 5: DIFFUSION IN SOLIDS
CHAPTER 5 Diffusion 5-1.
MSE-630 Dopant Diffusion Topics: Doping methods Resistivity and Resistivity/square Dopant Diffusion Calculations -Gaussian solutions -Error function solutions.
Thermally Activated Processes and Diffusion in Solids
Diffusion Diffusion means atoms moving and changing places. This happens in solids and liquids, exactly in the same way that an unpleasant smell moves.
Sinai University Faculty of Engineering Science Department of Basic science 7/14/ W6.
Dr. Nasim Zafar Electronics 1 EEE 231 – BS Electrical Engineering Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.
ECE/ChE 4752: Microelectronics Processing Laboratory
Chapter 5 Diffusion Skip Sec. 5-7, 5-8 and Homework No. 6 Problems 4-17, 4-19, 4-32, 4-47, 4-48, 5-9, 5-15, 5- 23, 5-26, 5-60.
Chapter 5 Diffusion and resistivity
Anandh Subramaniam & Kantesh Balani
NorFERM 2008 The EMF technique
Chapter 7 Electrical properties. Typical values of electrical conductivity.
DIFFUSION IN SOLIDS  FICK’S LAWS  KIRKENDALL EFFECT  ATOMIC MECHANISMS Diffusion in Solids P.G. Shewmon McGraw-Hill, New York (1963)
1 Diffusion Diffusion: Atom and Ion Movements in Materials Applications of Diffusion  Nitriding - Carburization for Surface Hardening of Steels  p-n.
Introduction To Materials Science, Chapter 5, Diffusion University of Virginia, Dept. of Materials Science and Engineering 1 Diffusion  how atoms move.
Relative Energy Levels of Defects Information was extracted from: Porter and Easterling, Phase Transformations in Metals and Alloys, 2nd Edition, CRC Press,
Introduction Material transport by atomic motion Diffusion couple:
V. Diffusion in Solids MECE 3345 Materials Science 1 VI. Diffusion in Solids copyright © 2008 by Li Sun.
Byeong-Joo Lee Byeong-Joo Lee POSTECH - MSE Diffusion.
CHAPTER 5 Diffusion 5-1. Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display Atomic Diffusion in Solids Diffusion.
CHE 333 CLASS 20 DIFFUSION.
© meg/aol ‘02 Module 20: Field–Assisted Diffusion DIFFUSION IN SOLIDS Professor Martin Eden Glicksman Professor Afina Lupulescu Rensselaer Polytechnic.
1 CHAPTER 7 Structure and Properties of Materials Defects and Properties : Point Defects and Diffusion.
Diffusion (continued)
ISSUES TO ADDRESS... How does diffusion occur? Why is it an important part of processing? How can the rate of diffusion be predicted for some simple cases?
Chapter 1 Diffusion in Solids. Diffusion - Introduction A phenomenon of material transport by atomic migration The mass transfer in macroscopic level.
Lecture 17: Diffusion PHYS 430/603 material Laszlo Takacs UMBC Department of Physics.
PHYSIOLOGY 1 LECTURE 10 DIFFUSION Simple, Facilitated, Active.
A closer look at Diffusion: Part II March 2001 D.G. Ast.
MIT Amorphous Materials 10: Electrical and Transport Properties Juejun (JJ) Hu 1.
MIT Microstructural Evolution in Materials 6: Substitutional Diffusion Juejun (JJ) Hu
MIT Microstructural Evolution in Materials 7: Ionic Defects Juejun (JJ) Hu
Introduction to Materials Science and Engineering
CHAPTER 5: DIFFUSION IN SOLIDS
Diffusion Thermally activated process
MIT Microstructural Evolution in Materials 8: Ionic Conductivity
Chapter 5: Diffusion ISSUES TO ADDRESS... • How does diffusion occur?
Diffusion how atoms move in solids
Point Defects in Crystalline Solids
"War is a matter of vital importance to the State;
Section 7: Diffusion Jaeger Chapter 4 EE143 – Ali Javey.
Atom and Ion Movements in Materials
Chapter 5: Diffusion in Solids
MIT Microstructural Evolution in Materials 6: Substitutional Diffusion
SOLID STATE CHMISTRY By: Dr. Aamarpali
Rate Process and Diffusion
MIT Amorphous Materials 10: Electrical and Transport Properties
MIT Microstructural Evolution in Materials 8: Ionic Conductivity
Lecture 3 OUTLINE Semiconductor Basics (cont’d) PN Junction Diodes
Diffusion Byeong-Joo Lee Phase Transformations POSTECH - MSE
CHAPTER 5: DIFFUSION IN SOLIDS
TOPIC 2: Diffusion in Solids
Rate Process and Diffusion
PDT 153 Materials Structure And Properties
Diffusion Chapter 5 9/4/2019 9:52 AM9/4/2019 9:52 AM
Presentation transcript:

Transport Zuoan Li NorFERM-2008

Outline Diffusion basis ▲ Diffusion mechanism ▲ Mathematics of diffusion ▲ D vs. T Diffusion in electric gradient (conductivity) Transport in electrochemical gradient

Diffusion Cu-Ni diffusion couple Before heat treatment After

Diffusion Mechanism Vacancy diffusion

Interstitial diffusion

Interstitialcy diffusion Collinear jump

Free transport mechanism (Grotthuss mechanism) Proton diffusion Vehicle mechanism Free transport mechanism (Grotthuss mechanism)

BaCeO3 Kreur, Annu. Rev. Mater. Res. 2003

Mathematics of diffusion J: flux of particles across plane with area A Fick’s 1st law c x A J: flux of particles across plane with area A

Fick’s 2nd law

Solution to Fick’s 2nd law Thin film Thin layer of radioactive isotopes is located at x=0 of a semi-infinite sample (self-exhausting source). Boundary conditions: Concentration after time t:

Deposition Annealing Cutting

Error function The concentration of tracer at x=0 is kept constant after diffusion (non-exhausting source). Boundary conditions: Concentration after time t:

O18 depth profile

Activation energy of diffusion coefficient Random diffusion: frequency of successful jumps : probability that jump can overcome energy barrier : probability of site being ready for jump

DHm

: probability of site for jump Vacancy Interstitial Defects Interstitial solute Constituents T, defect structure, and pO2

ci Di Defects Constituents small & variable large & constant Constituents

Constant or frozen vacancy Vacancy diffusion in elemental solids or Constant or frozen vacancy

Predominant oxygen vacancy (MaOb-d) Constant oxygen vacancy Vacancy diffusion in oxides Predominant oxygen vacancy (MaOb-d) Constant oxygen vacancy

Jump depends on oxygen-oxygen distance Protons Rotation is easy Jump depends on oxygen-oxygen distance Large soft lattices

H/D isotope effects Classical effects: Non-classical effects:

Electrical potential gradient Transport Electrical potential gradient

Nernst-Einstein relationship Activation energy

Conductivity Solid ionic conductor

Electronic conductivity Intrinsic semiconductor Intrinsic ionization

Extrinsic semiconductor (n-type) Low temperature Log n 1/T, K Intermediate temperature High temperature intrinsic

Non-stoichiometric semiconductor Defect equilibrium, T, P

un & up Magnitude Non-polar solids Polar oxides

Electrochemical potential gradient Transport Electrochemical potential gradient

Voltage over a sample Neutral form itot= 0 → transport number (EMF) itot≠ 0 → fuel cell

Flux of a specific species Steady state

Some diffusion terms Self diffusion Tracer diffusion Defect diffusion Chemical diffusion Ambipolar diffusion

Nonstoichiometric (defects) Defect Chemistry Summary Intrinsic (n=p) Extrinsic (n≠p) Nonstoichiometric (defects)

Thank you for your attention! Organization committee Thank you for your attention!