Chapter 3, Current in Homogeneous Semiconductors

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Presentation transcript:

Chapter 3, Current in Homogeneous Semiconductors Carrier Motion Current Flow Drift Diffusion Recombination/Generation Continuity Equations Use of Continuity Equations

Drift: Motion due to the electric field. Diffusion: Net motion from high to low concentration. Both very important in devices. Apply electric field, what happens to an electron. F=qE, so the (quasi) free electron accelerates. The velocity increases Velocity is limited by collisions with imperfections like: phonons impurities Eventually the effective mass approximation may not be valid.

Optical Phonons Ionization Intra-valley scattering Inter-valley scattering

Optical Phonons Ionization Intra-valley scattering Inter-valley scattering

Notation Reminder no, po: equilibrium n, p: general carrier concentrations

Reference: Pierret, Section 5.2

Electrons added to condution band. Electrons removed. Holes removed. Holes added to valence band. 3

(Definitions)

From nT/NT no

Note: R corresponds to generation here!!

Reference: Pierret, Section 5.3.

Next: Continuity Equations

(Fn – flux of electrons)

Depend on details of situation. Equilibrium Excess carriers Gop is from light shining on the semiconductor Normal recombination. Depend on details of situation.

+ - - (Error in eq. 3.66, Text, p. 141)

For normal, low-level injection, p<<ND

Minority carrier diffusion length for holes.

For direct bandgap semiconductors, R=βnp for direct band to band recombination.