Sung June Kim kimsj@snu.ac.kr http://nanobio.snu.ac.kr Semiconductor Device Fundamentals Introduction Sung June Kim kimsj@snu.ac.kr http://nanobio.snu.ac.kr.

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Presentation transcript:

Sung June Kim kimsj@snu.ac.kr http://nanobio.snu.ac.kr Semiconductor Device Fundamentals Introduction Sung June Kim kimsj@snu.ac.kr http://nanobio.snu.ac.kr

Syllabus

Syllabus

Syllabus

Syllabus

Semiconductor Device 1874. Braun 1947. Bell Lab. researchers Research of R-V characteristics of Metal – Semiconductor junction Application : Photo Diode & Rectifier 1947. Bell Lab. researchers Ge Bipolar Transistor was invented 1960. D. Kahng First Demonstration of Si- MOSFET.

Semiconductor Device 1st. Transistor 1947. Shockley, Bardeen and Brattain Two metal whiskers forming E-B, B-C junctions.

MOSFET vs. BJT MOSFET BJT Unipolar Surface Lateral transport Gate length Low current Slow High density Low power Bipolar Buried Vertical transport Base width High current Fast Low density High power

MOSFET vs. BJT Semi-insulating