19, Yangjae-daero 11gil, Seocho-gu, Seoul 137-130, Korea Month Year doc.: IEEE 802.11-yy/xxxxr0 November 2015 HE-STF Sequences Date: 2015-11-11 Authors: Name Affiliation Address Phone Email Eunsung Park LG Electronics 19, Yangjae-daero 11gil, Seocho-gu, Seoul 137-130, Korea esung.park@lge.com Jinsoo Choi js.choi@lge.com Jinyoung Chun jiny.chun@lge.com Dongguk Lim dongguk.lim@lge.com Jinmin Kim jinmin1230.kim@lge.com Kiseon Ryu kiseon.ryu@lge.com Jeongki Kim jeongki.kim@lge.com Suhwook Kim suhwook.kim@lge.com JayH Park hyunh.park@lge.com HanGyu Cho hg.cho@lge.com Eunsung Park, LG Electronics John Doe, Some Company
2111 NE 25th Ave, Hillsboro OR 97124, USA November 2015 Authors (continued) Name Affiliation Address Phone Email Ron Porat Broadcom rporat@broadcom.com Sriram Venkateswaran mfischer@broadcom.com Matthew Fischer Leo Montreuil Andrew Blanksby Vinko Erceg Robert Stacey Intel 2111 NE 25th Ave, Hillsboro OR 97124, USA +1-503-724-893 robert.stacey@intel.com Shahrnaz Azizi shahrnaz.azizi@intel.com Po-Kai Huang po-kai.huang@intel.com Qinghua Li quinghua.li@intel.com Xiaogang Chen xiaogang.c.chen@intel.com Chitto Ghosh chittabrata.ghosh@intel.com Laurent Cariou laurent.cariou@intel.com Yaron Alpert yaron.alpert@intel.com Assaf Gurevitz assaf.gurevitz@intel.com Ilan Sutskover ilan.sutskover@intel.com Eunsung Park, LG Electronics
Authors (continued) November 2015 Hongyuan Zhang Marvell Name Affiliation Address Phone Email Hongyuan Zhang Marvell 5488 Marvell Lane, Santa Clara, CA, 95054 408-222-2500 hongyuan@marvell.com Yakun Sun yakunsun@marvell.com Lei Wang Leileiw@marvell.com Liwen Chu liwenchu@marvell.com Jinjing Jiang jinjing@marvell.com Yan Zhang yzhang@marvell.com Rui Cao ruicao@marvell.com Sudhir Srinivasa sudhirs@marvell.com Bo Yu boyu@marvell.com Saga Tamhane sagar@marvell.com Mao Yu my@marvel..com Xiayu Zheng xzheng@marvell.com Christian Berger crberger@marvell.com Niranjan Grandhe ngrandhe@marvell.com Hui-Ling Lou hlou@marvell.com Eunsung Park, LG Electronics
Authors (continued) November 2015 Alice Chen Albert Van Zelst Name Affiliation Address Phone Email Alice Chen Qualcomm 5775 Morehouse Dr. San Diego, CA, USA alicel@qti.qualcomm.com Albert Van Zelst Straatweg 66-S Breukelen, 3621 BR Netherlands allert@qti.qualcomm.com Alfred Asterjadhi aasterja@qti.qualcomm.com Arjun Bharadwaj arjunb@qti.qualcomm.com Bin Tian btian@qti.qualcomm.com Carlos Aldana 1700 Technology Drive San Jose, CA 95110, USA caldana@qca.qualcomm.com George Cherian gcherian@qti.qualcomm.com Gwendolyn Barriac gbarriac@qti.qualcomm.com Hemanth Sampath hsampath@qti.qualcomm.com Lin Yang linyang@qti.qualcomm.com Menzo Wentink mwentink@qti.qualcomm.com Naveen Kakani 2100 Lakeside Boulevard Suite 475, Richardson TX 75082, USA nkakani@qti.qualcomm.com Raja Banerjea 1060 Rincon Circle San Jose CA 95131, USA rajab@qit.qualcomm.com Richard Van Nee rvannee@qti.qualcomm.com Eunsung Park, LG Electronics
Authors (continued) November 2015 Rolf De Vegt Sameer Vermani Qualcomm Name Affiliation Address Phone Email Rolf De Vegt Qualcomm 1700 Technology Drive San Jose, CA 95110, USA rolfv@qca.qualcomm.com Sameer Vermani 5775 Morehouse Dr. San Diego, CA, USA svverman@qti.qualcomm.com Simone Merlin smerlin@qti.qualcomm.com Tao Tian ttian@qti.qualcomm.com Tevfik Yucek tyucek@qca.qualcomm.com VK Jones vkjones@qca.qualcomm.com Youhan Kim youhank@qca.qualcomm.com Eunsung Park, LG Electronics
Authors (continued) November 2015 James Yee Mediatek Name Affiliation Address Phone Email James Yee Mediatek No. 1 Dusing 1st Road, Hsinchu, Taiwan +886-3-567-0766 james.yee@mediatek.com Alan Jauh alan.jauh@mediatek.com Chingwa Hu chinghwa.yu@mediatek.com Frank Hsu frank.hsu@mediatek.com Thomas Pare USA 2860 Junction Ave, San Jose, CA 95134, USA +1-408-526-1899 thomas.pare@mediatek.com ChaoChun Wang chaochun.wang@mediatek.com James Wang james.wang@mediatek.com Jianhan Liu Jianhan.Liu@mediatek.com Tianyu Wu tianyu.wu@mediatek.com Zhou Lan Zhou.lan@mediaTek.com Russell Huang russell.huang@mediatek.com Joonsuk Kim Apple joonsuk@apple.com Aon Mujtaba mujtaba@apple.com Guoqing Li guoqing_li@apple.com Eric Wong ericwong@apple.com Chris Hartman chartman@apple.com Eunsung Park, LG Electronics
Authors (continued) November 2015 Peter Loc Le Liu Jun Luo Yi Luo Name Affiliation Address Phone Email Peter Loc Huawei peterloc@iwirelesstech.com Le Liu F1-17, Huawei Base, Bantian, Shenzhen +86-18601656691 liule@huawei.com Jun Luo 5B-N8, No.2222 Xinjinqiao Road, Pudong, Shanghai jun.l@huawei.com Yi Luo +86-18665891036 Roy.luoyi@huawei.com Yingpei Lin linyingpei@huawei.com Jiyong Pang pangjiyong@huawei.com Zhigang Rong 10180 Telesis Court, Suite 365, San Diego, CA 92121 NA zhigang.rong@huawei.com Rob Sun 303 Terry Fox, Suite 400 Kanata, Ottawa, Canada Rob.Sun@huawei.com David X. Yang david.yangxun@huawei.com Yunsong Yang yangyunsong@huawei.com Junghoon Suh Junghoon.Suh@huawei.com Jiayin Zhang zhangjiayin@huawei.com Edward Au edward.ks.au@huawei.com Teyan Chen chenteyan@huawei.com Yunbo Li liyunbo@huawei.com Eunsung Park, LG Electronics
Authors (continued) November 2015 Fei Tong Hyunjeong Kang Samsung Name Affiliation Address Phone Email Fei Tong Samsung Innovation Park, Cambridge CB4 0DS (U.K.) +44 1223 434633 f.tong@samsung.com Hyunjeong Kang Maetan 3-dong; Yongtong-Gu Suwon; South Korea +82-31-279-9028 hyunjeong.kang@samsung.com Kaushik Josiam 1301, E. Lookout Dr, Richardson TX 75070 (972) 761 7437 k.josiam@samsung.com Mark Rison +44 1223 434600 m.rison@samsung.com Rakesh Taori (972) 761 7470 rakesh.taori@samsung.com Sanghyun Chang +82-10-8864-1751 s29.chang@samsung.com Yasushi Takatori NTT 1-1 Hikari-no-oka, Yokosuka, Kanagawa 239-0847 Japan takatori.yasushi@lab.ntt.co.jp Yasuhiko Inoue inoue.yasuhiko@lab.ntt.co.jp Shoko Shinohara Shinohara.shoko@lab.ntt.co.jp Yusuke Asai asai.yusuke@lab.ntt.co.jp Koichi Ishihara ishihara.koichi@lab.ntt.co.jp Junichi Iwatani Iwatani.junichi@lab.ntt.co.jp Akira Yamada NTT DOCOMO 3-6, Hikarinooka, Yokosuka-shi, Kanagawa, 239-8536, Japan yamadaakira@nttdocomo.com Fujio Watanabe 3240 Hillview Ave, Palo Alto, CA 94304 watanabe@docomoinnovations.com Haralabos Papadopoulos hpapadopoulos@docomoinnovations.com Eunsung Park, LG Electronics
#9 Wuxingduan, Xifeng Rd., Xi'an, China November 2015 Authors (continued) Name Affiliation Address Phone Email Yuichi Morioka Sony Corporation 1-7-1 Konan Minato-ku, Tokyo 108-0075, Japan Yuichi.Morioka@jp.sony.com Masahito Mori Masahito.Mori@jp.sony.com Yusuke Tanaka YusukeC.Tanaka@jp.sony.com Kazuyuki Sakoda Kazuyuki.Sakoda@am.sony.com William Carney William.Carney@am.sony.com Thomas Derham Orange thomas.derham@orange.com Bo Sun ZTE #9 Wuxingduan, Xifeng Rd., Xi'an, China sun.bo1@zte.com.cn lv.kaiying@zte.com.cn Kaiying Lv Yonggang Fang yfang@ztetx.com Ke Yao yao.ke5@zte.com.cn Weimin Xing xing.weimin@zte.com.cn Brian Hart Cisco Systems 170 W Tasman Dr, San Jose, CA 95134 brianh@cisco.com Pooya Monajemi pmonajem@cisco.com Eunsung Park, LG Electronics
November 2015 Overview Based on agreed 1x and 2x FFT size for HE-STF [1], this contribution discusses how to design HE-STF sequence for 11ax In this contribution, we build up HE-STF sequences by combining some extra values for additional usable tones and M sequence which can yield low PAPR All proposed sequences consist of binary values Also, the proposed HE-STF sequences have a nested structure, and thus those maintain similarities among 20, 40, 80MHz Extra values and coefficients of each M sequence are optimized in terms of the PAPR While we only consider the PAPR of the entire band for 1x HE-STF (i.e. 0.8us time period), we take into account the PAPRs of all resource units of OFDMA for 2x HE-STF (i.e. 1.6us time period) Note that PAPR is always calculated by applying 4x FFT sample rate in this contribution Eunsung Park, LG Electronics
HE-STF Sequence for 0.8us Periodicity (1/3) November 2015 HE-STF Sequence for 0.8us Periodicity (1/3) HE-STF sequence building procedure for 0.8us Periodicity M sequence is defined in the next page Candidates of a and c :{1, -1} 20MHz {M} 20MHz {c1M} 40MHz {M, 0, M} 40MHz {c2M, 0, c3M} 80MHz {M, 0, M, 0, M, 0, M} 80MHz {c4M, a1, c5M, 0, c6M, a2, c7M} Extra value Extra value 1. Repeat the structure 2. Put extra values and coefficients and optimize those values Eunsung Park, LG Electronics
HE-STF Sequence for 0.8us Periodicity (2/3) November 2015 HE-STF Sequence for 0.8us Periodicity (2/3) The coefficients and extra values have been selected in such a way that the PAPR of the entire band is minimized M sequence is defined as follows M = {-1 -1 -1 +1 +1 +1 -1 +1 +1 +1 -1 +1 +1 -1 +1} 20MHz HES-112,112(-112:16:112) = M *(1+j)*sqrt(1/2) HES-112,112(0) = 0 40MHz HES-240,240(-240:16:240) = {M, 0, -M} *(1+j)*sqrt(1/2) 80MHz HES-496,496(-496:16:496) = {M, 1, -M, 0, -M, 1, -M} *(1+j)*sqrt(1/2) Eunsung Park, LG Electronics
HE-STF Sequence for 0.8us Periodicity (3/3) November 2015 HE-STF Sequence for 0.8us Periodicity (3/3) PAPR [dB] In 20MHz and 40MHz, the proposed sequences have lower PAPR than those of 11ac Also, even in 80MHz, the PAPR of the proposed sequence is comparable PAPR 20MHz 40MHz 80MHz 11ac 2.24 5.25 4.35 Proposed 1.89 4.40 4.53 Eunsung Park, LG Electronics
HE-STF Sequence for 1.6us Periodicity (1/7) November 2015 HE-STF Sequence for 1.6us Periodicity (1/7) HE-STF sequence building procedure for 1.6us Periodicity 20MHz {M, 0, M} 40MHz {M, 0, M, 0, M, 0, M} 80MHz {M, 0, M, 0, M, 0, M, 0, M, 0, M, 0, M, 0, M} 1. Repeat the structure 20MHz {c1M, 0, c2M} {c3M, a1, c4M, 0, c5M, a2, c6M} 40MHz 80MHz {c7M, a3, c8M, a4, c9M, a5, c10M, 0, c11M, a6, c12M, a7, c13M, a8, c14M} 2. Put extra values and coefficients and optimize those values Eunsung Park, LG Electronics
HE-STF Sequence for 1.6us Periodicity (2/7) November 2015 HE-STF Sequence for 1.6us Periodicity (2/7) The coefficients and extra values have been selected in such a way that based on the agreed OFDMA tone plan [1], the worst PAPR among all PAPRs of resource units is minimized In order to check the PAPRs of all resource units, we have considered the UL OFDMA where each user occupies only one resource unit 20MHz HES-120,120(-120:8:120) = {M, 0 , -M} *(1+j)*sqrt(1/2) 40MHz HES-248,248(-248:8:248) = {M, -1, -M, 0, M, -1, M} *(1+j)*sqrt(1/2) HES-248,248(±248) = 0 80MHz HES-504,504 (-504:8:504) = {M, -1, M, -1, -M, -1, M, 0, -M, 1, M, 1, -M, 1, -M} *(1+j)*sqrt(1/2) HES-504,504(±504) = 0 Eunsung Park, LG Electronics
HE-STF Sequence for 1.6us Periodicity (3/7) November 2015 HE-STF Sequence for 1.6us Periodicity (3/7) PAPR [dB] Assuming UL OFDMA, we have checked PAPR in all resource units with agreed tone plans 20MHz 2.48 2.22 4.77 1.93 4.79 4.26 4.37 4.40 7 DC 26 52 242 + 3 DC 102+4 pilots 1 13 5 Edge 6 Edge Eunsung Park, LG Electronics
HE-STF Sequence for 1.6us Periodicity (4/7) November 2015 HE-STF Sequence for 1.6us Periodicity (4/7) PAPR [dB] (cont.) 40MHz 12 Edge 11 Edge 5 DC D C 242 26 102+4 52 1 2 2.22 2.48 4.77 2.90 4.52 4.26 5.21 5.39 4.39 5.46 5.48 5.22 Eunsung Park, LG Electronics
HE-STF Sequence for 1.6us Periodicity (5/7) November 2015 HE-STF Sequence for 1.6us Periodicity (5/7) PAPR [dB] (cont.) 80MHz 12 Edge 13 11 Edge 7 DC 996 usable tones +5 DC 242 26 52 102+4 2 1 Eunsung Park, LG Electronics
HE-STF Sequence for 1.6us Periodicity (6/7) November 2015 HE-STF Sequence for 1.6us Periodicity (6/7) PAPR [dB] (cont.) 80MHz (cont.) PAPRs of left hand side 26 2.22 2.48 4.77 2.90 4.52 4.26 5.21 4.80 3.85 5.39 4.39 5.40 5.50 5.61 4.79 52 106 242 484 Eunsung Park, LG Electronics
HE-STF Sequence for 1.6us Periodicity (7/7) November 2015 HE-STF Sequence for 1.6us Periodicity (7/7) PAPR [dB] (cont.) 80MHz (cont.) PAPRs of right hand side PAPR of center 26 tone RU is 1.94 PAPR of entire band is 5.77 26 2.22 4.77 2.48 4.26 4.80 3.85 5.21 4.52 2.90 4.39 5.40 5.39 5.61 5.50 4.79 52 106 242 484 Eunsung Park, LG Electronics
Summary The proposed sequences use binary signaling as in 11ac November 2015 Summary We have proposed HE-STF sequences for 0.8us and 1.6us periodicity For building up HE-STF sequences, we have simply applied the nested structure and put some extra values and coefficients HE-STF sequences for 0.8us periodicity have been optimized in terms of the PAPR of the entire band Based on the OFDMA tone plan, HE-STF sequences for 1.6us periodicity which minimize the worst PAPR have been determined The proposed sequences use binary signaling as in 11ac In terms of PAPR, the proposed sequences are not bottle-necks compared to the data part as shown in appendix Eunsung Park, LG Electronics
November 2015 Straw poll Do you agree to add the following HE-STF sequences for 0.8us and 1.6us periodicity to the 11ax SFD: M = {-1 -1 -1 +1 +1 +1 -1 +1 +1 +1 -1 +1 +1 -1 +1} 1x HE-STF sequences 20MHz HES-112,112(-112:16:112) = M *(1+j)*sqrt(1/2) HES-112,112(0) = 0 40MHz HES-240,240(-240:16:240) = {M, 0, -M} *(1+j)*sqrt(1/2) 80MHz HES-496,496(-496:16:496) = {M, 1, -M, 0, -M, 1, -M} *(1+j)*sqrt(1/2) 2x HE-STF sequences HES-120,120(-120:8:120) = {M, 0 , -M} *(1+j)*sqrt(1/2) HES-248,248(-248:8:248) = {M, -1, -M, 0, M, -1, M} *(1+j)*sqrt(1/2) HES-248,248(±248) = 0 HES-504,504 (-504:8:504) = {M, -1, M, -1, -M, -1, M, 0, -M, 1, M, 1, -M, 1, -M} *(1+j)*sqrt(1/2) HES-504,504(±504) = 0 Eunsung Park, LG Electronics
References [1] 11-15-0132-09-00ax-spec-framework November 2015 Eunsung Park, LG Electronics
November 2015 Appendix Eunsung Park, LG Electronics
PAPR comparison between Data and 2x HE-STF November 2015 PAPR comparison between Data and 2x HE-STF The CDF for the data and 2x HE-STF PAPR in UL OFDMA with the tone plan described in slide 8-10 will be shown in the next three slides We obtain the PAPR assuming each user occupies only one resource unit As shown in slide 8-10, possible resource units (max tone units are just for checking on entire band) are Nine 26, four 52, two 106 and one 242 tone units in 20MHz Eighteen 26, eight 52, four 106, two 242 and one 484 tone units in 40MHz Thirty-seven 26, sixteen 52, eight 106, four 242, two 484 and one 994 tone units in 80MHz Then, we aggregate PAPR results of all possible resource units for each bandwidth and plot the CDF Eunsung Park, LG Electronics
November 2015 PAPR Comparison - 20MHz Eunsung Park, LG Electronics
November 2015 PAPR Comparison - 40MHz Eunsung Park, LG Electronics
November 2015 PAPR Comparison - 80MHz Eunsung Park, LG Electronics