半導體物理 (二) 半導體之物理現象介紹.

Slides:



Advertisements
Similar presentations
Chapter 6-2. Carrier injection under forward bias
Advertisements

Semiconductor Device Physics
Semiconductor Device Physics
FEKT VUT v BrněESO / L1 / J.Boušek1 Intrinsic semiconductor.
Semiconductor Physics - 1Copyright © by John Wiley & Sons 2003 Review of Basic Semiconductor Physics.
Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 1 Chapter III June 1, 2015June 1, 2015June 1, 2015 Carrier Transport Phenomena.
Carrier Transport Phenomena
Lecture #8 OUTLINE Generation and recombination Excess carrier concentrations Minority carrier lifetime Read: Section 3.3.
Chapter V July 15, 2015 Junctions of Photovoltaics.
Dr. Nasim Zafar Electronics 1 EEE 231 – BS Electrical Engineering Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.
Energy bands semiconductors
Chapter 4 Photonic Sources.
Potential vs. Kinetic Energy
EXAMPLE 8.1 OBJECTIVE To determine the time behavior of excess carriers as a semiconductor returns to thermal equilibrium. Consider an infinitely large,
Semiconductor Physics. Introduction Semiconductors are materials whose electronic properties are intermediate between those of Metals and Insulators.
Electronics the Third and Fourth Lectures Third week / 11/ 1436 هـ أ / سمر السلمي.
Basic Electronics By Asst Professor : Dhruba Shankar Ray For B.Sc. Electronics Ist Year 1.
1 Prof. Ming-Jer Chen Department of Electronics Engineering National Chiao-Tung University October 9, 2014 DEE4521 Semiconductor Device Physics Lecture.
Ch 140 Lecture Notes #13 Prepared by David Gleason
Solid-State Electronics Chap. 6 Instructor: Pei-Wen Li Dept. of E. E. NCU 1 Chap 6. Nonequilibrium Excess Carriers in Semiconductor  Carrier Generation.
Carrier Transport Phenomena And Measurement Chapter 5 26 February 2014
ECEE 302: Electronic Devices
Overview of Silicon Semiconductor Device Physics
EE130/230A Discussion 6 Peng Zheng.
Introduction to semiconductor technology. Outline –4 Excitation of semiconductors Optical absorption and excitation Luminescence Recombination Diffusion.
President UniversityErwin SitompulSDP 6/1 Dr.-Ing. Erwin Sitompul President University Lecture 6 Semiconductor Device Physics
President UniversityErwin SitompulSDP 4/1 Lecture 4 Semiconductor Device Physics Dr.-Ing. Erwin Sitompul President University
Electron and Hole Concentrations in Extrinsic Semiconductor
NEEP 541 Displacements in Silicon Fall 2002 Jake Blanchard.
Chapter 4 Excess Carriers in Semiconductors
Notes 27 February 2013.
Carrier generation and recombination A sudden increase in temperature increases the generation rate. An incident burst of photons increases the generation.
Issued: May 5, 2010 Due: May 12, 2010 (at the start of class) Suggested reading: Kasap, Chapter 5, Sections Problems: Stanford University MatSci.
CSE251 CSE251 Lecture 2 and 5. Carrier Transport 2 The net flow of electrons and holes generate currents. The flow of ”holes” within a solid–state material.
CSE251 CSE251 Lecture 2. Carrier Transport 2 The net flow of electrons and holes generate currents. The flow of ”holes” within a solid–state material.
Lecture 5 OUTLINE Semiconductor Fundamentals (cont’d) – Carrier diffusion Diffusion current Einstein relationship – Generation and recombination Excess.
Excess Carriers in Semiconductors
Multiple choise questions related to lecture PV2
Lecture 10 OUTLINE pn Junction Diodes (cont’d)
Lecture 10 OUTLINE pn Junction Diodes (cont’d)
Electronics the Third and Fourth Lectures
BSIC SEMICOCONDUCTOR CONCEPTS INTRINSIC SILICON:
P-n Junctions ECE 2204.
4.3.4 Photoconductive Devices
Introduction to Solid-state Physics Lecture 2
Lecture 5 OUTLINE Semiconductor Fundamentals (cont’d)
Lecture #8 OUTLINE Generation and recombination
Quasi-Fermi Levels The equilibrium EF is split into the quasi-Fermi
Chapter 3, Current in Homogeneous Semiconductors
Chapter 4 Excess Carriers in Semiconductors
Semiconductor Physics
Direct and Indirect Semiconductors
Density of States (DOS)
Lecture 5 OUTLINE Semiconductor Fundamentals (cont’d)
pn Junction Diodes: I-V Characteristics
Chapter 3, Current in Homogeneous Semiconductors
Lecture 10 OUTLINE pn Junction Diodes (cont’d)
Lecture 10 OUTLINE pn Junction Diodes (cont’d)
반도체 기초 이론 Vol. I Semiconductor Fundamentals by R. F
Lecture 10 OUTLINE pn Junction Diodes (cont’d)
Intrinsic Semiconductors CONCENTRATION OF ELECTRONS IN CB AND HOLES IN VB FERMI ENERGY FOR INTRINSIC SEMICONDUCTOR Intrinsic Semiconductors.
PDT 264 ELECTRONIC MATERIALS
Density of States (DOS)
BSIC SEMICOCONDUCTOR CONCEPTS INTRINSIC SILICON:
Carrier Transport Phenomena And Measurement Chapters 5 and 6 22 and 25 February 2019.
Carrier Transport Phenomena And Measurement Chapters 5 and 6 13 and 15 February 2017.
Density of States (DOS)
Carrier Transport Measurements Including Hall Effect Chapters 5 and 6 17 and 19 February 2016.
Presentation transcript:

半導體物理 (二) 半導體之物理現象介紹

半導體之物理現象介紹 Density of states function Fermi-Dirac distribution Carrier concentrations Work function Excess carriers in semiconductors Diffusion of carriers Diffusion and drift of carriers

Density of states function & Fermi-Dirac distribution

Carrier concentrations

Work Function

Excess of carriers in semiconductors If a carrier excess is created by optical excitation or carrier injection via a suitable contact. When the excitation is then suddenly cut off, the carrier concentrations will return gradually to their thermal equilibrium values owing to recombination of the excess carriers. Physically, t represents the average time an excess carrier remains free before recombining directly. The carrier lifetime for indirect recombination is more complicated than in the above case.

Diffusion of carriers

Diffusion and drift of carriers