Studies of Interface Structure and Properties of Thin Films

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Studies of Interface Structure and Properties of Thin Films Theodosia Gougousi, Department of Physics, UMBC The atomic layer deposition of HfO2 films on native oxide covered GaAs(100) surfaces using TEMAHf and H2O, or TDMAHf and H2O processes results in the consumption of the native Ga and As surface oxides. ALD of HfO2 on passivated GaAs surfaces in either HF or NH4OH solutions results in an oxide-free interface. This observation has significant technological implications since deposition of similar HfO2 films on etched Si surfaces commonly results in the growth of interfacial SiO2. TEMAHf + H2O TEMAHf + H2O UMBC Physics