INSTITUTE IN PHYSICAL -TECHNICAL PROBLEMS

RUSSIAN FEDERAL ATOMIC ENERGY AGENCY FEDERAL STATE UNITARY ENTERPRISE INSTITUTE IN PHYSICAL -TECHNICAL PROBLEMS License of gosatomnadzor of RF № ЦО-09-209-0898 Department of ionizing radiation detectors 141980 IPTP, ul. Kurchatova 4 Dubna, Moscow region Tel.: /09621/ 62789 Fax: 65082 E-mail: iftp@dubna.ru http://www.iftp.ru Sector of non-cooled SCD and DU Department of radioisotope instruments and scintillation detectors

X-ray and gamma-radiation units БДЕР-Г-7К of planar type X-RAY AND GAMMA-RADIATION DETECTING UNITS BASED ON HIGH-PURITY GERMANIUM (HPG) SEMICONDUCTOR DETECTORS X-ray and gamma-radiation units БДЕР-Г-7К of planar type Gamma-radiation detecting units БДЕГ of coaxial type Area of application: nondestructive control of element composition of matter under laboratory, industrial, and field conditions; geology and mineral exploration; metallurgy and chemistry; control of fabrication of radioactive materials, chemicals, and radiation sources; customs control; environment monitoring; nuclear physics investigations. Area of application: radioactive material production and processing; atomic industry; customs control and control of storage and transportation of radioactive materialsж metallurgy and chemical industry; medicine; environment monitoring; other fields of science and technology where analysis of matter composition using the activation analysis methods and detection of natural or manmade radionuclides are required. ИФТП

Structure of detector systems: HPG coaxial detector with the diffusion n+ and ion- implantation p+ electrical contacts; Cooled preamplifier first stage; Well-type cryostat (types 1 and 2) or cooling system together with a liquid nitrogen container (types 3,4 and 5); Standard Dewar flask in types 1 and 2; Signal preamplifier (PA); Cable connectors. Structure of detector systems: HPG Planar detector with the diffusion n+ and ion- implantation p+ electrical contacts; Cooled preamplifier first stage; Well-type cryostat (types 1 and 2) or cooling system with Be window together with the liquid nitrogen container (types 3,4 and 5); Dewar flask in types 1 and 2; Signal preamplifier (PA); Cable connectors. Basic characteristics: Wide radiation energy range from 40 keV up to 10 MeV; High energy resolution; High detecting efficiency; Efficient setting-up of detector; Capability to measure radiation with arbitrary spatial orientation; Transportation and storage without liquid nitrogen. Basic characteristics: Wide radiation energy range (from 3 keV up to 1000 keV); High energy resolution; High detecting efficiency over all energy range; Efficient setting-up of; Capability to measure radiation with arbitrary spatial orientation; Transportation and storage without liquid nitrogen cooling. DESIGNS OF DETECTOR SYSTEMS БДЕР-Г-7K AND БДЕГ Type 1 Type 2 Type 3 Type 4 Type 5 Systems of other design available by option in accordance with arranged requirements. ИФТП

Table 1 X-RAY AND GAMMA-RADIATION UNITS OF БДЕР-Г-7К TYPE BASED ON HPG PLANAR SCD 2,0 900 700 15  17 20,0** 50 БДЕР-Г-7K -7K -20- 1,9 780 550 15,0** 44 БДЕР-Г-7K -7K -15- 1,8 630 400 13  15 10,0** 36 БДЕР-Г-7K -7K -10- – 590 360 8,0* 32 БДЕР-Г-7K -7K -8- 560 320 10  13 5,0* 25 БДЕР-Г-7K -7K -5- 530 250 3,0* 19 БДЕР-Г-7K -7K -3- 510 220 7  10 2,0* 16 БДЕР-Г-7K -7K -2- 500 195 1,0* 11 БДЕР-Г-7K -7K -1- 490 185 5  7 0,5* 8 БДЕР-Г-7K -05- 480 170 5 0,2* 5 БДЕР-Г-7K-02- For 1333 keV For 122 keV (эV) For 5,9 кэВ (eV) Thickness (mm) Area (mm) Diameter Energy resolution Detector dimensions Type of detecting unit   By special request IPTP can manufacture the detecting units with the characteristics other than listed in Table 1, including the units with large sensitive areas. * Input beryllium window thickness no more than 100 μm. ** Input beryllium window thickness no more than 250 μm. Example of designation of the detecting unit for the order: detecting unit БДЕР-Г-7К-5-320 (version 1), where: - БДЕР-Г-7К is the detecting unit; - 5 is the sensitive area of 5.0 cm2; - 320 is energy resolution no more than 320 eV for energy 5.9 keV; - version 1 is a design modification. ИФТП

Efficiency to NaJ (33)”, % Table 2 GAMMA-RADIATION DETECTING UNITS OF БДЕГ TYPE 3.00 2.00 66:1 2.10 1200 60 БДЕГ -60.210 68:1 1000 БДЕГ -60.200 64:1 55 БДЕГ -55.210 200 67:1 БДЕГ -55.200 2.98 1.98 62:1 1100 50 БДЕГ -50.210 2.65 1.90 65:1 950 БДЕГ -50.195 2.95 60:1 45 БДЕГ -45.210 900 БДЕГ -45.190 58:1 40 БДЕГ -40.200 875 БДЕГ -40.190 56:1 35 БДЕГ -35.200 БДЕГ -35.190 1.95 54:1 30 БДЕГ -30.195 1.85 БДЕГ -30.185 50:1 25 БДЕГ -25.195 55:1 850 БДЕГ -25.185 43:1 20 БДЕГ -20.190 48:1 1.80 БДЕГ -20.180 41:1 15 БДЕГ -15.190 46:1 825 БДЕГ -15.180 39:1 13 БДЕГ -13.190 БДЕГ -13.180 37:1 10 БДЕГ -10.185 1.75 БДЕГ-10.175 FW02M FWHM FW1M 1,33 MeV (keV) 122 keV (eV) Peak form Peak/Compton ratio Energy resolution Efficiency to NaJ (33)”, % Type of detecting unit On request IPTP can manufacture detecting units with the characteristics other than listed in Table 2, including detecting efficiency more than 60%. Example of order: Detecting unit БДЕГ-30.185 (version 3), where: - БДЕГ is the detecting unit; - 30 is the detecting efficiency; - 185 is energy resolution no more than 1.85 keV for energy 133 keV; - version 3 is a design modification.   ИФТП

55Fe spectrum and a high precision generator pulse Efficiency comparison of HPG detectors planar 2000 mm sq. coaxial 17 % Energy, keV Efficiency (relative units) Besides detector systems БДЕР-Г-7K and БДЕГ FSUE IPTP delivers also X-ray and γ-radiation spectrometers on the basis of these detectors and spectrometric devices (SU-03P with ADC-8K-2M, SU -05P1) manufactured by Joint-Stock Company “ASPECT “ (Dubna), spectrometric devices (SBS-55M, SBS-60) manufactured by Open Company GREEN STAR TECHNOLODGIES (Moscow) and other firms producing spectrometer devices for semi-conductor X-ray and γ-radiation detectors. Delivery term: no more than 6 months from the date of advance payment stipulated in the contract. 5.9 keV 6.49 keV 145 eV HPP 7.19 keV X-ray detector, 20 mm2 × 4 mm. 55Fe spectrum and a high precision generator pulse Counts Energy, keV 5.89 keV ИФТП

ñ X-RAY DETECTING UNIT БДЕР–КИ–11К Main fields of application: DESIGNED TO TRANSFORM QUANTUM ENERGY OF X-RAY AND LOW-ENERGY GAMMA-RADIATION INTO PROPORTIONAL BY THE AMPLITUDE OF ELECTRIC SIGNALS AND TO AMPLIFY THEM FOR FURTHER DETECTION WITH SPECTROMETRIC INSTRUMENTS Main fields of application: nuclear power, geology, metallurgy, environment monitoring systems, secondary raw material processing, customs control, and criminalistics. Can be applied in x-ray-fluorescence analyzers for rapid determination of element composition of matter. The detecting unit is designed to be operated under conditions corresponding to the УХЛ version of the category 5.1 State Standard 15150-69. PRINCIPAL FEATURES: high energy resolution; excellent background characteristics; small sizes and weight; does not require liquid nitrogen; arbitrary spatial orientation. X-ray detecting unit БДЕР–КИ–11К is registered in a State register of measuring means and has a certificate of type approval RU.C.38.002.A No.8697 of 20.09.2000 ñ ИФТП

Sensitive surface area……………………………………………………………….……..7 mm2 and 12 mm2 PRINCIPAL SPECIFICATIONS Sensitive surface area……………………………………………………………….……..7 mm2 and 12 mm2 Thickness of detector’s sensitive area…………………………………………………………………380 m Energy resolution at energy 5.9 keVat constant of molding time 20 s for detector: with area 7 mm2...........................................................................................not more than 230 eV with area 12 mm2……………………………………………………….…not more than 280 eV Energy resolution at energy 59.6 keVat constant of molding time 20 s for detector: with area 7 mm2…………………………………………………………...not more than 460 eV with area 12 mm2………………………….………………………………not more than 500 eV Ratio of the peak height of total absorption for the energy of 5.9 keV to the level of continuous amplitude distribution for the energy of 2.5 keV (peak/background)……...…not less than 800 Thickness of the inlet beryllium window: Standard………………………………………………………………………………………………….25m on special order………………………………………………………………………………...12m and 8m Conversion coefficient at a load not less than 1 k………………………………...not less than 0.3 mV/keV Output resistance……………………………………………………………………………………….75 1 Output signal polarity…………………………………………………………………………………negative Maximum bias voltage of the detector at current less than 1A…………………………………………160V Power supply of the preamplifier at maximum current 35 mA…………………………………..+/- 12V ±2% Maximum cooler current…………………………………………………………...…...0.7A at voltage 1.6 V Mass………………………………………………………………..…………..……….not more than 0.12 kg Overall sizes……………………………………………………………………….…….....…108×35×22 mm ИФТП

thermoelectric cooler 1st stage feed-back filter case detector thermoelectric cooler temperature probe T8-04 output + bias + cooler temperature probe Numeration of outlets of the head unit Numeration of connector contacts DB-9M of the detecting unit. - cooler + 12V - 12V PT Coc Fig.1 Unit layout Fig.2 Efficiency of Si(Li) and Si-pin detectors vs. energy and thickness of beryllium window Effectivity, % energy, keV 300 µm 4000 µm   Fig.3 Detecting unit БДЕР-КИ-11К FSUE IPTP manufactures and delivers x-ray spectrometers built with the detecting unit БДЕР–КИ–11К and with the spectrometric devices СН-06П produced by the SPC Aspect (Dubna) and other firms producing spectrometric devices for x-ray semiconductor detectors. Timing of orders is within 3 months from the date of prepayment transfer stipulated by the agreement (contract). ИФТП

ИФТП Fig.5 Spectrum 241Am Fig.4 Spectrum 109Cd Count Count Energy, keV Fig.6 Spectrum 57Fe Count Energy, keV Fig.7 Spectrum 57Co Count Energy, keV 6,4 keV 14,4 keV 7,06 keV ИФТП

SILICON DETECTOR OF GAMMA RADIATION ДКГ DESIGNED TO MEASURE GAMMA-RADIATION RATE The detector is designed to measure the exponential dose rate in the pulse counting mode in the range from 10-4 to 103 R/h of gamma-radiation of the energy from 0.08 to 7.0 MeV. The detector is composed of two silicon wafers with pin structures with created in them pin-structures. The wafers are mounted in the metal case. The detector structure is nonseparable. p+ contacts of the detector are connected with the detector case. n+ contacts of the detector are connected with the insulated outlets (“paddles”)   Under the effect of gamma-radiation over the material of the wafers, mobile charge carriers arise which with the applied voltage are accumulated at the contacts and detected by the radiometric instruments. ИФТП

Energy noise equivalent, keV, not more BASIC SPECIFICATIONS: Detector provides measurement of the exponential dose rate in the range from 10-4 to 103 R/h of gamma-radiation of the energy from 0.08 to 7.0 MeV. With the discrimination threshold of 70 keV the following parameters of the detector are provided: • sensitivity to gamma-radiation of energy 0.661 MeV for 137Cs isotope: - for wafer No.1 from 22.5 to 35 pulse/μR - for wafer No.2 from 0.4 to 0.7 pulse/μR. • alteration of sensitivity of the wafers in the gamma-radiation energy range from 0.08 to 1.25 MeV not more than 35% relatively to the sensitivity value at the energy of 0.661 MeV. • sensitivity of the detector to gamma-radiation of the 137Cs source incident at any angle differs not more than 10 % from the rating value for each wafer. • count rate for wafers Nos. 1 and 2 due to the self noise, not more than 0.1 pulse/s at the temperature of 60oC. • measurement of wafer sensitivity at ambient temperature alteration from +20oC to +60oC is not more than ±1.5% for each 10oC. • working voltage of the detector should be (60 ± 3) V.   Energy noise equivalent, keV, not more Reverse current at temperature (20 ± 1) oC (60 – 3) oC Wafer 1 20 1.5 15.0 Wafer 2 0.8 10.0 ИФТП

SILICON DETECTOR OF GAMMA RADIATION ДКД DESIGNED TO MEASURE GAMMA- AND BETA-RADIATION The detector can be applied in radiometric instruments of general use. The detector is composed of a silicon wafer with a created in it pin-structure. The wafer is mounted in the metal case. The detector structure is nonseparable. The inner volume of the silicon wafer has the conductivity type close to its own, which is attained by compensation of the acceptor impurity of the initial material by lithium ion drift.   Ionizing radiation incident upon the sensitive region of the detector forms in its sensitive volume a nonequilibrium charge of electrons and holes proportional to the absorbed energy. Under the effect of the electric field formed by the voltage applied to the detector, charges drift to the electrodes and are detected by the downstream instruments. the golden film is overcoated with the tungsten dioxide film for protection. ИФТП

Measurement conditions (20 ± 1) oC 60.0 Energy resolution for beta particles of energy 975.6 keV of 207Bi isotope, keV, not more (50 ± 3) oC 150.0 Equivalent noise irradiation, keV, not more 50.0 20.0 Reverse current, μA, not more 2.0 Measurement conditions Value Parameter BASIC SPECIFICATIONS: the value of the sensitive area is within 2.0 to 3.0 cm2 and is listed in the certificate for the specific detector. the sensitive region thickness is not less than W = 3mm. working voltage of the detector Uw = (150 ± 5) V. reverse current value of the detector and equivalent noise irradiation, measured at a molding time constant, should comply with the following requirements: Detector maintains its parameters under the effect of: Vibration loads in the range of 1 to 600 Hz and the acceleration of 50 m∙ s-2 (5g) in three mutually perpendicular directions. Linear centrifugal loads with the acceleration of 100 m∙ s-2 (10g). Ambient temperature in the range of -50 oC to +50 oC. Detector maintains its parameters after the effect of: Ambient temperature in the range of -60 oC to +70 oC. Atmosphere pressure in the range of 10 to 3∙105 Pa (from 7.5∙102 mmHg to 22.5∙102 mmHg). Multiple impacts with the acceleration up to 120 m∙ s-2 (12g) and shock durability 1 to 10 μs in three mutually perpendicular directions. Single impact with the acceleration up to 10000 m∙ s-2 (1000g) and durability 0.5 to 2.0 μs in three mutually perpendicular directions. Relative humidity of (98 ± 2)% at the temperature of 40 oC.   ИФТП

CLINICAL DOSIMETER ДКДа-01-«ИФТП» BASED ON DIAMOND DETECTOR FOR RADIOTHERAPY SYSTEMS THE DOSIMETER IS DESIGNED TO MEASURE THE ABSORBED DOSE RATE OF IONIZING RADIATION FROM THE RADIOTHERAPY RADIATION EQUIPMENT AS WELL AS TO MONITOR RADIATION CONDITION UNDER THE INFLUENCE OF HIGH DOSE RATES AND ELEVATED TEMPERATURES. FEATURES: Natural diamond detector is used as ionizing radiation monitor permitting measurement in photon, electron, and proton beams within the range of therapeutic dose and energy rates. Detector is tissue-equivalent. High sensitivity of radiation detection. High radiation stability. Stable operation at elevated temperatures. Detector sensitivity independent on energy and radiation incidence angle. Water resistance of the detector. B C A   The dosimeter is permitted for use in medical practice by the Committee for new medical technologies of Ministry of public Health, Russian Federation. It is registered in the State register of measurement means and has a certificate of type approval. COMPOSITION: - dosimetric natural diamond detector of the ПДПС – 1К type. - unit of information recording and processing. - connecting cable (length not less than 20 m). - solid-state phantom made of acrylic plastic (delivered upon separate order). ИФТП

Recorded energy range, MeV: BASIC SPECIFICATIONS Recording unit shows information of charge value, C, (dose, Gy); current, A, (dose rate, Gy/s). Measurement range of photon, electron, and proton absorbed dose rate, Gy/s………………...0.001 - 1.0 Measurement range of the absorbed dose of photon, electron, and proton radiation, Gy………..0.1 - 100 Recorded energy range, MeV: for photons…………………………………………………………………....…….………...…0.08 - 25 for electrons……………………………………………………………………....………...……...4 – 25 Limit of basic tolerable measurement error, % …………………………………………………...………2 Energy dependence of recording sensitivity, % ………………………………………………………...2 Preliminary radiation dose, Gy………………………………………………………………………...10 Detector radiation resource , Gy……………………………………………………………....………..107 Thickness of the detector sensitive volume, mm……………….....................…………...……….0.1 - 0.4 Sensitive volume of the detector, mm3..................................................................................................1 - 6 Power supply: voltage, V………………………………………………………………………………...…….22015% frequency, Hz ……………………………………………………………………………...……….501 Power consumption, VA, not more …………………………………………………………………….30 Overall dimensions of the recording unit, mm……………………………………………...260220100 Mass (without connection cable and phantom), kg, not more………………………………………….2.0   Layout of the diamond detector  7,3 1,0 80 20 ИФТП

ñ MULTICHANNEL ALPHA-RADIATION ENERGY SPECTROMETER СЭАМ – 1К MULTICHANNEL ALPHA-RADIATION ENERGY SPECTROMETER СЭАМ – 1К IS DESIGNED FOR QUALITATIVE AND QUANTITATIVE ANALYSIS OF DIVERSE SAMPLES CONTAINING ALPHA-RADIAITON NUCLIDES ADVANTAGES Independent measurement of up to four samples simultaneously. Vacuum chamber and stainless steel dismountable holder for the analyzed sample provide for the effective decontamination. Mechanical three-position vacuum valve and vacuum chamber design allow one to measure the analyzed sample for a long time without constant air exhaust from the vacuum chamber. Silicon alpha-radiation spectrometric detectors ПДПА-1К with a small thickness of the inlet window allow one to measure the low-active samples at a minimum “detector-sample” distance. The supply voltage, amplification factor, and pulse amplitude of the internal testing generator is set with a microprocessor.   The alpha-radiation energy spectrometer СЭАМ – 1К is registered in the State register of measurement means and has a certificate of type approval. ñ ИФТП

Resolution, not more, keV PRINCIPAL SPECIFICATIONS Detected energy range, MeV……………………………………………………………………………4 ÷ 8 Absolute energy resolution of each detecting channel of the spectrometer by the 5.15 MeV line of 239 Pu source from the ОСАИ reference set placed at 40 mm from the detector depending on the sensitive area of the used detector: Detector area, mm2 Resolution, not more, keV 2000 75 1000 45 600 35 Integral nonlinearity in the operating range of alpha-radiation energies, not more, keV……………..…15 Maximum diameter of the measured sample, mm……………………………………………………….60   COMPOSITION OF THE FOUR-CHANNEL SPECTROMETER Four separate spectrometric measurement NIM paths, each of them including: a vacuum chamber, a silicon detector, a preamplifier, an amplifier-former, a detector power supply unit, a microprocessor control unit, and a vacuum indicator. Two two-input ADC boards IBM PC. Personal computer IBM PC. Vacuum pump. DELIVERY One-, two-, three-, or four-channel spectrometer can be delivered. Spectrometer without ADC boards, PC, and vacuum pump can be delivered. By special request of the customer the spectrometer can be equipped with silicon detectors with different sensitive area. Intermediate maintenance during the year. ИФТП

ñ SILICON ALPHA-RADIATION DETECTORS ПДПА-1K PASSIVATED IMPLANTED SPECTROMETRIC Alpha-radiation silicon detectors ПДПА-1K are designed for operation in spectrometers for qualitative and quantitative analysis of various samples containing alpha-radiation radionuclides. FEATURES High energy resolution for alpha-spectrometry at room temperature. Cleanable sensitive surface. Small thickness of the dead layer. Operation in vacuum. Capsule with a standard CP-50 connector.   The silicon alpha-radiation detectors ПДПА-1K are registered in the State register of measuring means and have a certificate of type approval. ñ ИФТП

Minimum depletion depth, m…………………………………………………..100 BASIC SPECIFICATIONS Minimum depletion depth, m…………………………………………………..100 Guaranteed maximum energy resolution for 5.15 MeV (239Pu): Detector designation Group Sensitive area, mm2 Energy resolution, keV ПДПА-1К А Б 20 12 16 ПДПА-1К1 600 28 35 ПДПА-1К2 1000 45 ПДПА-1К3 2000 55 75   Geometric size of the capsule Detector designation D, mm d, mm a, mm b, mm ПДПА-1К 20 5.1 8 38 ПДПА-1К1 45 27.6 7 37 ПДПА-1К2 53 35.7 ПДПА-1К3 67 50.4 ИФТП

  X-RAY AND GAMMA-RADIATION DETECTING UNITS BASED ON HIGH-PURITY GERMANIUM (HPG) SEMICONDUCTOR DETECTORS ИФТП

  ИФТП

  ИФТП

  ИФТП

  ИФТП

INSTITUTE IN PHYSICAL -TECHNICAL PROBLEMS