Electron Transport Properties of Graphene Nanoribbon Based Electronic Devices: A First Principle Point of View Y. Gen, Y.Y. Liang, F. Jiang, H. Chen Department.

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Presentation transcript:

Electron Transport Properties of Graphene Nanoribbon Based Electronic Devices: A First Principle Point of View Y. Gen, Y.Y. Liang, F. Jiang, H. Chen Department of Physics, Fudan University, Shanghai 200433, China Conclusion With properly presented terminal protections and carefully arranged unit cell, cluster based tight bonding approximation is capable of simulating bulk properties of infinite GNRs. Edge state plays a dominant role in GNR transport properties, and the presence of edge defects might greatly reduce the tunneling probability. Conductance of GNRs with edge defects might be tunable by transverse electrostatic fields, which is primarily induced by electron-hole polarization along ribbon edges and the greatly enhanced potential barrier on edge defects. [1] Xiaolin Li, Xinran Wang, Li Zhang, Sangwon Lee, Hongjie Dai, Science vol. 319 29 Feb, 2008 [2] Qimin Yan, Bing Huang, Jie Yu, Fawei Zheng, Ji Zang, Jian Wu, Bing-Lin Gu, Feng Liu, and Wenhui Duan Nano Lett., 2007, 7 (6), 1469 [3] Novoselov, K.S. et al. Science 306, 666 (2004) [4] Luis A. Agapito* and Hai-Ping Cheng J. Phys. Chem. C 2007, 111, 14266-14273 [5] Lemme, M. C. et a. IEEE Electron Device Letters 28, 282 (2007)