Attempts to deposit Nb3Sn by sputtering and diffusing multilayers of Nb and Sn S. Deambrosis, G. Keppel, V. Palmieri, N. Patron, R.G. Sharma Thin films and new ideas for pushing the limits of RF superconductivity, Legnaro 9-12 October 2006
Experimental setup: sputtering Section view of experimental device Experimental design sputtering system Balanced Magnetron sources Target-Substrate distance 60 mm 2 inches target diameter Thin films and new ideas for pushing the limits of RF superconductivity, Legnaro 9-12 October 2006
Thickness Nb = 4.5 Thickness Sn Thin film grown Condition of deposition P base = 1.5x10-6 mbar P sputtering = 4.0x10-3 mbar Sputtering Target Voltage (V) Current (A) Power (W) Sn 613 0.18 108 Nb 407 1.99 800 Thickness Nb = 4.5 Thickness Sn Time of sputtering: 2 minutes Nb 30 minutes multilayers deposition 1 turn of sample every 13 seconds Annealed after sputtering for 3 hours at 975 °C Thin films and new ideas for pushing the limits of RF superconductivity, Legnaro 9-12 October 2006
Results: X-ray diffraction Sample M2 as deposited Sample M2 after annealing Sample M2 as deposited Sample M2 after annealing Thin films and new ideas for pushing the limits of RF superconductivity, Legnaro 9-12 October 2006
Results: Superconductive characteristic Tc= 16.98 K DTc= 0.23 RRR= 2.13 Thin films and new ideas for pushing the limits of RF superconductivity, Legnaro 9-12 October 2006
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Nb3Sn Phase diagram Thin films and new ideas for pushing the limits of RF superconductivity, Legnaro 9-12 October 2006