SRAM Generator - Satya Nalam.

Slides:



Advertisements
Similar presentations
Jongsok Choi M.A.Sc Candidate, University of Toronto.
Advertisements

Figure (a) 8 * 8 array (b) 16 * 8 array.
Semiconductor Memory Design. Organization of Memory Systems Driven only from outside Data flow in and out A cell is accessed for reading by selecting.
Robust Low Power VLSI R obust L ow P ower VLSI Sub-threshold Sense Amplifier (SA) Compensation Using Auto-zeroing Circuitry 01/21/2014 Peter Beshay Department.
Robust Low Power VLSI R obust L ow P ower VLSI Synthesizing SRAM timing and Periphery using Synopsis By: Jim Boley.
1 8-bit X 8-bit SRAM and 3 X 8 Decoder Irina Vazir, Prabhjot Balaggan and Sumandeep Kaur Advisor: Dr. David Parent December 06, 2004.
Los tOHMales CalI e ntes Lauren Cash, Chuhong Duan Rebecca Reed, Andrew Tyler ECE 4332: Intro to VLSI.
11/03/05ELEC / Lecture 181 ELEC / (Fall 2005) Special Topics in Electrical Engineering Low-Power Design of Electronic Circuits.
Spring 07, Feb 27 ELEC 7770: Advanced VLSI Design (Agrawal) 1 ELEC 7770 Advanced VLSI Design Spring 2007 Power Consumption in a Memory Vishwani D. Agrawal.
Die-Hard SRAM Design Using Per-Column Timing Tracking
Low-Power CMOS SRAM By: Tony Lugo Nhan Tran Adviser: Dr. David Parent.
Tera-Pixel APS for CALICE Progress 19 th January 2007.
E-Voting Machine - Design Presentation Group M1 Bohyun Jessica Kim Jonathan Chiang Chi Ho Yoon Donald Cober Wed, Oct 29 Functional Layout Secure Electronic.
XC6200 Family FPGAs By: Ahmad Alsolaim Alsolaim.
E-Voting Machine - Design Presentation Group M1 Bohyun Jessica Kim Jonathan Chiang Chi Ho Yoon Donald Cober Mon, Nov 10 Analog Simulation for ExtractedRC.
RF Triangulator: Indoor/Outdoor Location Finding Architecture Proposal Giovanni Fonseca David Fu Amir Ghiti Stephen Roos Design Manager: Myron Kwai.
Chapter 6 A Primer On Digital Logic Power Point Slides PROPRIETARY MATERIAL. © 2014 The McGraw-Hill Companies, Inc. All rights reserved. No part of this.
Toshiba Standard Cell Architecture for High Frequency Operation Peter Hsu, Ph.D. Chief Architect Microprocessor Development Toshiba America Electronics.
High Speed 64kb SRAM ECE 4332 Fall 2013 Team VeryLargeScaleEngineers Robert Costanzo Michael Recachinas Hector Soto.
Open Discussion of Design Flow Today’s task: Design an ASIC that will drive a TV cell phone Exercise objective: Importance of codesign.
High Speed Cache For: PICo Board Proposal By: Team XOR NOTE TO FUTURE VIEWERS OF THESE SLIDES: ALL YELLOW TEXT BOXES ACCOMPANIED BY ARROWS IN THE DIRECT.
הפקולטה למדעי ההנדסה Faculty of Engineering Sciences.
McKenneman, Inc. SRAM Proposal Design Team: Jay Hoffman Tory Kennedy Sholanda McCullough.
Low-Power SRAM ECE 4332 Fall 2010 Team 2: Yanran Chen Cary Converse Chenqian Gan David Moore.
SRAM Generator -Satya Nalam. 2 Motivation SRAM is an integral part of most SoCs Goal: Automate SRAM design process Technology-independence User-independence.
Project SRAM Stevo Bailey Kevin Linger Roger Lorenzo John Thompson ECE 4332: Intro to VLSI.
Update on the Design Implementation Methodology for the 130nm process Microelecronics User Group meeting TWEPP 2010 – Aachen Sandro Bonacini CERN PH/ESE.
Penn ESE370 Fall DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 28: November 7, 2014 Memory Overview.
SRAM Design for SPEED GROUP 2 Billy Chantree Daniel Sosa Justin Ferrante.
Bit Cell Ratio Testing. Thin Cell Advantages: Smallest possible area of 6T Bit Cell, Can be mirrored (saves area = can reduce distance between n-wells.
EE141 Project: 32x32 SRAM Abhinav Gupta, Glen Wong Optimization goals: Balance between area and performance Minimize area without sacrificing performance.
Penn ESE370 Fall DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 28: November 8, 2013 Memory Overview.
Low Power SRAM VLSI Final Presentation Stephen Durant Ryan Kruba Matt Restivo Voravit Vorapitat.
STT-RAM Generator - Anurag Nigam.
3D Design IPHC Frédéric Morel - Grégory Bertolone - Claude Colledani.
EE586 VLSI Design Partha Pande School of EECS Washington State University
April 22, Bit-Line Leakage Cancellation: Design and Test Automation Sudhanshu Khanna.
A Case for Standard-Cell Based RAMs in Highly-Ported Superscalar Processor Structures Sungkwan Ku, Elliott Forbes, Rangeen Basu Roy Chowdhury, Eric Rotenberg.
Prof. Hsien-Hsin Sean Lee
Lecture 3. Lateches, Flip Flops, and Memory
DREAM TEAM 2 Roto, Holiano, Chaka
Topics Subsystem design principles. Pipelining. Datapath.
COMP211 Computer Logic Design
Designing a Low Power SRAM for PICo
سبکهاي طراحي (Design Styles)
Lecture 19: SRAM.
A High-Speed and High-Capacity Single-Chip Copper Crossbar
AIDA ASIC review Davide Braga Steve Thomas ASIC Design Group
Low-Power SRAM Using 0.6 um Technology
Mary Jane Irwin ( ) CSE477 VLSI Digital Circuits Fall 2002 Lecture 25: Peripheral Memory Circuits Mary Jane.
Alpha Blending and Smoothing
V-IRAM Register File Iakovos Mavroidis
Day 26: November 11, 2011 Memory Overview
Mary Jane Irwin ( ) CSE477 VLSI Digital Circuits Fall 2002 Lecture 22: Shifters, Decoders, Muxes Mary Jane.
The Xilinx Virtex Series FPGA
CMOS VLSI Design Chapter 12 Memory
Synthesizing SRAM timing and Periphery using Synopsis
Amr Amin Preeti Mulage UCLA CKY Group
Semiconductor Memories
Chip Layout 27 F2 50 F2 35 F2 LUT 27 F2 50 F2 35 F2 27 F2 50 F2 35 F2
Implementation Technology
EE115C – Winter 2009 Digital Electronic Circuits
Programmable Logic- How do they do that?
ECE 432 Group 4 Aaron Albin Jisoon Kim Kiwamu Sato
The Xilinx Virtex Series FPGA
Team Awesome += 5 PICo Design Presentation
STT-RAM Design Fengbo Ren Advisor: Prof. Dejan Marković Dec. 3rd, 2010
Day 26: November 10, 2010 Memory Periphery
DIICD Class 13 Memories.
Computer Architecture Lecture 30: In-memory Processing
Presentation transcript:

SRAM Generator - Satya Nalam

SRAM Architecture SRAM specs Single bank Capacity – 8-32kb Col-mux – 1,2,4,8 #Rows – 8-512 #Rows and #cols power of 2 Timing block using encounter Schematic/Layout script for tiling each block Wrapper script to generate final SRAM

Design WLs BLs Pre-decode o/p BL PCH CSEL Col-muxed BLs SAE SAPCH SA output Enable Address EN Rd/Wr Data in & out

Schematic Generation Can be completely automated Parametrization Use @key in Skill procedures for optional arguments Transistor sizes from optimization result procedure(UvaEceSchematicCreateInstParNand2(cvid libName cellName Iname location intop inbot out VDD VSS @key (lp 0.06) (wp 0.20) (ln 0.060) (wn 0.20) (m 1))

Schematic Generation Leaf-cell schematic creation Bitcells – PDK Decoders – Skill Everything else – Manual, can be replaced by Skill

Layout Generation: WLD WL Drivers Via-programmed Staggered for pitch-matching

Layout Generation: Array Termination cells Well taps

Layout Generation: Timing Predecode outputs Design placed and routed by Encounter

Layout Generation: Bitslice CD SA IO IO Staggered for pitch-matching

Layout Generation: Top-level 128x64 SRAM Routing through Abutment - Fillers with metal

Summary of useful tips for automation through Skill Using procedures – with @key optional arguments Via-programming Staggering for pitch-matching Routing through abutment

Final deliverable Completed set of highly parametrized Skill scripts for SRAM schematic and layout generation. Technology and user independent. Class-specific work – parametrization of schematic and layout scripts Documentation in progress.