Microsensors for Monitoring Wafer Uniformity of Plasma Processes

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Presentation transcript:

Microsensors for Monitoring Wafer Uniformity of Plasma Processes SFR Workshop November 8, 1999 Ribi Leung, Dwight Howard, Scott D. Collins, and Rosemary L. Smith MicroInstruments and Systems Laboratory UCDavis This work describes in-situ sensors for peak temperature and undercut mapping of RIE processes. 2/22/2019

Abstract The goal of this project is to realize specific microsensors for in situ plasma process monitoring. Thin, multilayer, metal film resistors are being evaluated as surface peak temperature recording devices. Au/Cr resistors, which are effective for 150 <T < 250 C, have been fabricated and tested in an ECR plasma tool. Au/Al and Au/Cr/Al resistors are being evaluated for detection of T≤150C. An RIE undercut sensor has been designed and is in the testing phase. Temperature and undercut sensors will be integrated for combined measurements later this year. 2/22/2019

Temperature Dependence of Au/Cr Resistance Inter-diffusion of Au/Cr is an irreversible process that produces a permanent increase in resistivity as a function of time • Temp. TIME FUNCTIONS (3, 6, and 10 min.) 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 150 170 190 210 230 250 Temperature (C) Au/Cr Interdiffusion 2/22/2019

Thin Film Resistor Pattern 4 pt probe measurement Resistor Array 500 µm Ri≈ 700 Ω R i = 670 Ω 2/22/2019

Wafer Surface Resistance Map Peak T varied from 220-240C, across 4 in. wafer Au/Cr : Initial R variation Au/Cr: R after ECR (6 min, 1200W, Ar) 1 2 3 4 5 6 7 8 9 10 S1 S2 S3 S4 S5 S6 S7 S8 S9 1 2 3 4 5 6 7 8 9 10 S1 S2 S3 S4 S5 S6 S7 S8 S9 700-750 750-800 800-850 850-900 900-950 950-1000 1000-1050 1050-1100 1100-1150 1150-1200 1200-1250 2/22/2019

Au / Al Resistors Resistance Change at Lower Temperatures A u / C r l 2 . 5 3 4 6 7 9 1 D E G R S N T I l OHMS color change Au/Al Resistors also exhibit a visible color change at T≈ 120 C which can be a useful tool. However, these structures may be too unstable at room T to be reliable. Interposition of a Cr layer, i.e. Au/Cr/Al, to limit inter-diffusion at Room T is under investigation. 2/22/2019

RIE Undercut Variation Sensor Resistance determined by lateral diffusion (≈1µm) of ion implanted dopant redistribution after drive-in. Resistance increases with undercut Submicron undercut yields 10-15% ∆R Oxide mask Polysilicon Ion Implantation i I V RIE undercut 2/22/2019

Progress vs Milestones June 1999 Determine wafer surface temperature range during RIE processing. (Preliminary Results) Map surface temperature variation in specific RIE tools. (Done) June 2000 Optimize materials for temperature sensitivity and range. Test undercut sensors in RIE (in progress). Test integrated Temperature and undercut sensors in RIE. Determine undercut variation in specific RIE tools. 2/22/2019

Future Directions: A MEMS Device for T Mapping versus Time Thermal micro-actuator positions shadow mask over etch/deposition window, creating steps in film height. Location of step edge corresponds to Temperature, height indicates time. T1 T2 2/22/2019