Fabricated Arrays CCS-0888-A CCS-0889-A CCS-0890-A CCS-1061-A Si>2e18 n<5e15 Si:3.3e17 nid Zn:8e17 Zn:2e18 CCS-0888-A 10 nm 1 μm 1.5 μm 68.5 nm 2 μm InP Substrate p+ InP n-InP avalanche InP field stop n-InP absorber n+ -InP cap n+ -InGaAs contact Si>2e18 n<5e15 Si:3.3e17 nid Zn:8e17 Zn:2e18 CCS-0889-A 10 nm 1 μm 1.5 μm 53.5 nm 3 μm 2 μm InP Substrate p+ InP n-InP avalanche InP field stop n-InP absorber n+ -InP cap n+ -InGaAs contact Si>2e18 n<5e15 Si:3.3e17 nid Zn:8e17 Zn:2e18 CCS-0890-A 10 nm 1 μm 1.5 μm 53.5 nm 2 μm InP Substrate p+ InP n-InP avalanche InP field stop n-InGaAs absorber n+ -InP cap n+ -InGaAs contact n- InGaAsP grading 100 nm Si>2e18 n<5e15 Si:3.3e17 nid Zn:8e17 Zn:2e18 CCS-1061-A 10 nm 1 μm 1.5 μm 61.5 nm 2 μm InP Substrate p+ InP n-InP avalanche InP field stop n-InP absorber n+ -InP cap n+ -InGaAs contact

Room Temperature Probe Data

Estimate Based on Asynchronus Data Current Board had some fundamental problem which cannot be resolved. Estimates based on previously measured 77 K discrete devices and room temp arrays: DCR < 1 Hz at 77K PDE ~ 30% over array Fill Factor ~ 75 % with µlens A1*e-λ1t + A2*e-λ2t λ1=51.3 λ2=8.02