an average length about 1.3 um and 80 nm in diameter. Based antimonide nanowires 2- MBE growth conditions 1- Substrate preperation Preperation steps Growth temp. 480°C V/III ratio 42:1 growth rate 500 nm/h InAs 1300 nm/h InAsSb growth time 20 min InAs 1 h InAsSb The growth of InAsSb NWs on Si substrate was carried out using VG V80h MBE system Si(111) sio2 Grown InAsSb NWs InAs stub SEM images with 30° tilt an average length about 1.3 um and 80 nm in diameter.

Normalized PL spectra measured at 4k for InAs bulk and InAsSb NWs 3- X-Ray analysis Sb composition of x = 0.07 which is calculated using the position of the InAsSb peak relative to the substrate peak this is in good agreement with the results from PL. 4- PL analysis µ-PL system The PL measurements were performed at 4K, with the excitation laser at a wavelength around 808 nm, and with average excitation powers up to 330 mW. Normalized PL spectra measured at 4k for InAs bulk and InAsSb NWs