Performance vs input power Performance vs frecuency

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Presentation transcript:

Performance vs input power Performance vs frecuency L-Band Class-F High Efficiency Power Amplifier based on GaN-HEMT Technology D. Tena A Class-F amplifier for an EER transmitter has been developed and implemented. This class of operation in combination with GaN-HEMT technology provides high power, high efficiency and wide bandwidth. Envelope Elimination and Restoration Technique (EER) High efficiency topology High linearity technique Grupo de Ingeniería de Radio Project sponsored by Class F Amplifier Operation Biharmonic Class F Reference impedance planes Package effect Z @ f0 = at virtual drain Z @ 2f0 = 0 at virtual drain Z @ 3f0 = ∞ at virtual drain ηmax = ≈ 88,36% The package of the transistor limits the harmonic control of the load impedance Simulation and experimental results Load impedance Performance vs input power Performance vs frecuency fo 2fo 3fo Simulation Measurements CONCLUSIONS A high-power high-efficiency Class-F amplifier employing GaN technology has been designed and built. Harmonic control is used to satisfy load conditions for Class-F operation. Experimental results have been obtained for a 40W PA prototype at 1.64GHz with up to 75% drain efficiency (after trimming) over a 280MHz bandwidth.