Pt-dse NANO recipe 50 cycles Tiffany W Huang Ludwig Galambos

Wafer orientation and pattern Wafer with 189 die. Die shown above. Pillars with 14um, 10um, and 6um diameters Pitches of 75um, 55um, and 35 um Area etched ~ 650 mm2 (8.3%) Average etch Depth = 9.95um/50cycles; Unif = 3.2% Si ER = 3.98um/min X Wafer center X Wafer bottom C-prime Si (100)

Full data

Sensofar measurements Wafer Center 10.00 um Wafer Bottom 10.10 um

Wafer Bottom 10.08 um 10.10 um

Wafer Center 9.44 um Wafer Center 10.00 um