Microstructures of GaSb grown on SiC and AlN Composite Substrates

Slides:

Advertisements

Similar presentations

Crystallographic Orientation Zbigniew Radzimski. Crystal Structure Unit cell Silicon.

Advertisements

Channeled Ni-YSZ and Co-YSZ Anodes produced from Directionally Solidified Eutectics: Microstructural Stability M. A. Laguna-Bercero, A. Larrea*, R. I.

The origin of rhyolitic spherulites at Rockhound State Park Nelia W. Dunbar Virginia T. McLemore New Mexico Bureau of Geology and Mineral Resources New.

1. What number does the following array represent?

BOWLINGPARTS.COM Machine parts & services Specials Heavy duty Original standard.

Nanopatterning of Silicon Carbide by UV and Visible Lasers. By Arvind Battula 12/02/2004.

Ceramics for Environment

Composite Materials A novel interesting field Rui Zhang

Metal-insulator thin films have been studied for making self-patterning nano-templates and for controlling attachment strength on template surfaces. These.

Thin ladder development Status of ladder development for the thin ladderfest.

CIRCUMFERENCE OF A CIRCLE LEARNING TARGET 4: I CAN SOLVE PROBLEMS USING AREA AND CIRCUMFERENCE OF A CIRCLE.

Plasma Arc Lamp Operation

Review of Results First Wall Helium Management & Refractory Armored Materials L L Snead, T. Hinoki, J. Hunn, C. Blue, N. Hashimoto (ORNL) R. Raffray (UCLA)

SUP Seminar on High Performance Ceramics and Heterogeneous Materials

Dilbert. Dilbert Wal-Mart Apple Computer Started about the same time as Microsoft Was founded by Steve Jobs and Steve Wosniak in a garage.

Integrated Materials Plan Progress: Helium Blistering and Refractory Armored Materials Lance L Snead High Average Power Lasers Workshop December 6, 2002.

2003/5/12 國立彰化師範大學 - 屠嫚琳 1 The Blue Laser Diode 屠嫚琳 Man-Lin Tu.

Copper based composite: L-Cop Cu High thermal Conductive Cu 2 O Low thermal expansive Anna malai Industrial Engineering Material Science.

Copper (Cu) FCC nm atomic radii Silver (Ag) FCC nm atomic radii Mix 50% Ag + 50% Cu, gives two solid phases (  and  )  (saturated - mostly.

Materials Conductive materials – valence band overlaps the conduction band Conductive materials – valence band overlaps the conduction band Non conductive.

Tribo-Mechanical Evaluations of HIPed Thermal Spray Cermet Coatings V. StoicaHeriot-Watt University, UK Rehan Ahmed Heriot Watt University, UK T. ItsukaichiFujimi.

3rd NoRDHia 1 TITLE INVESTIGATION OF A SINGLE CRYSTAL DIAMOND SENSOR AND ITS APPLICATION IN BACKGROUND MEASUREMENTS FOR HERA Wolfgang Lange,

A =  r 2 A =  x 8 2 A = cm 2 (1 dp) A =  r 2 A =  x A = cm 2 (1 dp) The Area of a Circle Find the area of the following circles.

Effects of river bed substrate composition on the diversity of individual.

Specimens are measured in microns (µm)! 1 millimeter = 1000 microns (micro meters) If this caterpillar is 20mm long, how many microns is it? (20mm)(1000)

CORPORATE INSTITUTE OF SCIENCE & TECHNOLOGY, BHOPAL DEPARTMENT OF ELECTRONICS & COMMUNICATIONS NMOS FABRICATION PROCESS - PROF. RAKESH K. JHA.

Thin ladder development 28/3/2006. Targets Aiming for 0.1 % X 0 Uniformity over full ladder Compatibility with wire and bump bonding Provision for optical.

Si–C Shock activation of green mixtures for SHS production of Si–C composites Sergey Skiba, Gh. G. Pak XII International symposium on explosive production.

Mirror MOT for Coupling Neutral Atoms to a Superconducting Resonator E. del Rio Arguelles J. A. Grover, J. E. Hoffman, P. A. Solano, J. Lee, S. L. Rolston,

A Quantum Computer in a Diamond Grant Riley. Outline Requirements for a quantum computer Chemical Vapor Deposition Diamonds – Properties – Impurities.

Fab - Step 1 Take SOI Wafer Top view Side view Si substrate SiO2 – 2 um Si confidential.

0,10,15 0,1 0,2 C5-PCLNL HP 1 v c 165 m/min Coolant pressure 7 bar SS2506 (case hardened) 55 HRC CNGA S01030A 7015 Feed f n (mm/rev) Cutting.

결정 구조 분석 結晶構造分析 Analysis of Crystal Structure 일반화학 Chemistry

第四部分生态系统生态学生态系统的主要类型与分布高建芳

Fig. 6 from High-temperature tensile testing machine for investigation of brittle–ductile transition behavior of single crystal silicon microstructure.

It’s the same for all circles! The Circumference of a Circle.

May 17, 2016  Pencil Please have your geometry packet open to page 56!

Anne-Marie VALENTE-FELICIANO On behalf of the HEPTHF Collaboration.

版權所有翻印必究日期：指導老師：林克默博士學生：陳冠廷. 版權所有翻印必究 Outline 1.Introduction 2.Materials and methodology 3.Results and discussion 4. Conclusions 2016/6/242.

Skew Lines. The two given lines given are skew (i.e. they do not meet). What is the shortest distance between them? shortest distance.

The reading is 7.38 mm. The reading is 7.72 mm.

10 mm is the same as... 1 cm. 20 mm is the same as... 2 cm.

Microwave plasma enhanced chemical vapour deposition (MWPCVD) of polycrystalline diamond coatings and their characterisations for thermal applications.

Silicon Epitaxial Wafer for Discrete

Update on Helium Management and Tungsten Bonded Ferritic

Diamond based Composites for Collimators Contribution to EuCard

Etch-Stop Techniques : (1) Doping Selective Etching (DSE)

Diamond Substrates for High Power Density Electronics

EU Compound Semiconductor Materials Committee

PARAMETRIC SURVEY OF COATED FUEL PARTICLE

Composite solids can be formed by either

Summer 2009 SUMMARY Stefano & Jarda.

Main Types of Industrial Material

Characterization of III-Nitrides on Hydrogen-Etched 6H-SiC

Materials Conductive materials – valence band overlaps the conduction band Non conductive materials – valence band is separated from conduction.

SiC DRIE APPLICATIONS In Corial 210IL.

Attempts to deposit Nb3Sn by sputtering

an average length about 1.3 um and 80 nm in diameter.

FIG. 2. X-ray θ-2θ diffraction scans of SIO-214 films grown on GSO, STO, LSAT, NGO, and LAO (from top to bottom). 00l peaks from the SIO-214 films (l = 4,

Unit: Water and the Atmosphere Lesson #3: Precipitation Essential Questions: 1.) What are the common types of precipitation? 2.) What are the causes and.

A) The flexible 1.9 mm diameter and 900 mm length cryoprobe, b) connected to the cryotherapy equipment. c) Marks on the distal area of the probe (1 cm.

Materials Conductive materials – valence band overlaps the conduction band Non conductive materials – valence band is separated from conduction.

Ch 8.8: Inverse of Functions and Relations

Multi-simultaneous.

Materials Conductive materials – valence band overlaps the conduction band Non conductive materials – valence band is separated from conduction.

Susceptibility to hydrogen peroxide.

Production of Large Monocrystalline Ingots and Discs of Molybdenum and its Alloys via Crucibleless Zone Melting for Special Application Products Authors:

In vivo effects of TTFields on intradermal tumors in mice.

Fig. 2 XRD spectra and molecular structures of tetragonal and monoclinic crystal phase KDP samples. XRD spectra and molecular structures of tetragonal.

Presentation transcript:

Microstructures of GaSb grown on SiC and AlN Composite Substrates

Microstructure of SiC Composite Substrate Spot Diameter: 0.5 mm

Microstructure of AlN Composite Substrate Spot Diameter: 0.5 mm

Microstructure of GaSb grown on AlN Substrate Experiment: 080208 Spot Diameter: 0.5 mm

Microstructure of GaSb grown on AlN Substrate Spot Diameter: 0.5 mm Experiment: 081208

Microstructure of GaSb grown on AlN Substrate Experiment: 081908 Spot Diameter: 0.5 mm

Microstructure of GaSb grown on AlN Substrate Experiment: 082608 Spot Diameter: 0.5 mm

Microstructure of GaSb grown on AlN Substrate Experiment: 091008 Spot Diameter: 0.5 mm

Microstructure of GaSb grown on AlN Substrate Experiment: 092408 Spot Diameter: 0.5 mm

Microstructure of GaSb grown on SiC Substrate Experiment: 101908 Spot Diameter: 0.5 mm

Microstructure of GaSb grown on SiC Substrate Experiment: 102508 Spot Diameter: 0.5 mm

Microstructure of GaSb grown on SiC Substrate Experiment: 102808 Spot Diameter: 0.5 mm

Microstructure of GaSb grown on SiC Substrate Experiment: 103008 Spot Diameter: 0.5 mm

Microstructure of GaSb grown on SiC Substrate Experiment: 110308 Spot Diameter: 0.5 mm

Microstructure of GaSb grown on SiC Substrate Experiment: 110708 Spot Diameter: 0.5 mm

Microstructure of re-crystallized GaSb (from Powder) on SiC Substrate Experiment: 111508 Spot Diameter: 0.5 mm