Growth and Characterization of GeSn for Infrared Imaging

Slides:



Advertisements
Similar presentations
Conclusion : We have demonstrated excellent growth of SCD on the top and side surface of HPHT seeds. Our initial experiments show the feasibility of growing.
Advertisements

Bandgap Engineering of UV-Luminescent Nanomaterials Leah Bergman, University of Idaho, DMR CAREER One of the main advantages of a nanomaterial.
John A. Patten, Muralidhar Ghantasala, Amir R. Shayan, Huseyin Bogac Poyraz, Deepak Ravindra (WMU, Kalamazoo, MI ) 2009 NSF CMMI Engineering Research.
2012 Transfer-to-Excellence Research Experiences for Undergraduates Program (TTE REU) Characterization of layered gallium telluride (GaTe) Omotayo O Olukoya.
GOALI: Growth-dependent identification and control of defects and dopants in ZnO – DMR L. J. Brillson and D. C. Look A major objective of this.
Another “Periodic” Table!. Growth Techniques Ch. 1, Sect. 2, YC Czochralski Method (LEC) (Bulk Crystals) –Dash Technique –Bridgeman Method Chemical Vapor.
Tin Based Absorbers for Infrared Detection, Part 2 Presented By: Justin Markunas Direct energy gap group IV semiconductor alloys and quantum dot arrays.
Microstructure Studies of Carbon-Carbon Composite Materials
Low-Temperature Printing of Silver Nanoparticle based Metal Grids for Photovoltaic Device Applications Louis J. Kjerstad University of St. Thomas Mechanical.
The Effect of Carbon Nanotubes in Polymer Photovoltaic Cells May 13, 2010 JESUS GUARDADO, LEAH NATION, HUY NGUYEN, TINA RO.
University of Utah Semiconductors Research Group This work is supported by NREL under subcontract #XXL and NSF under grant # DMR PECVD.
INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #5.
Thin Film Deposition Prof. Dr. Ir. Djoko Hartanto MSc
Growth and Characterization of Aluminum Nitride (AlN) Nanowires Alicia Herro Senior, Physics, College of Arts and Sciences, University of North Texas.
Bader Al Salman Abstract In this work, we use chemical vapor deposition (CVD) technique to synthesize CdS 1D-nanostructures (nanobelts & Sea-Urchin like.
Nanowires and Heterostructures Michael Christiansen Mentor: Dr. Jeff Drucker Statewide Space Grant Symposium 17 April 2010 Special thanks to: Jeff Drucker,
PREPARATION OF ZnO NANOWIRES BY ELECTROCHEMICAL DEPOSITION
Zn x Cd 1-x S thin films were characterized to obtain high quality films deposited by RF magnetron sputtering system. This is the first time report of.
Vapor-Liquid-Solid Growth of ZnSiN2
Growth and Analysis of MOCVD Grown Crystalline GaAs Andrew Howard, Dr. S. Phillip Ahrenkiel SDSM&T Nanoscience Department NSF REU Grant # Objectives.
The Effects of Process Parameters during the Deposition of SiNx using PECVD Presented by John Nice and Joyce Palmer Georgia Institute of Technology NNIN.
Epitaxy: Application to Polarized Emitters
Adsorption and Reaction of ortho-Carborane on Pt(111) David Siap August 3, 2006 REU Program Advisors: Professor Trenary Aashani Tillekaratne University.
Temperature-Dependent Electrical Characterization of Multiferroic BFO Thin Films Danielle Hitchen, Sid Ghosh, K. Hassan, K. Banerjee, J. Huang Electrical.
1 Materials Science Laboratory, Department of Physics, College of Science, Az Zulfi, Majmaah University, KSA.
1 K. Overhage, Q. Tao, G. M. Jursich, C. G. Takoudis Advanced Materials Research Laboratory University of Illinois at Chicago.
Photothermal Aerosol Synthesis and Characterization of Silicon Nanoparticles REU 2000 Department of Chemical Engineering University at Buffalo Chien-Yu.
 Motivation  Cd 3 As 2, being a Dirac-type semimetal (DTS), is of considerable research interest due to its high electron mobility, and being a 3D analogue.
S. Girshick, U. Minnesota Aluminum Nanoparticle Synthesis and Coating Steven L. Girshick University of Minnesota.
Negative Capacitance Devices to Enable Low- Voltage/Low-Power Switching In Electronic Devices John G. Ekerdt, University of Texas at Austin, DMR
By: Kyle Logan MEEN  Crystals have special desired optical and electrical properties  Growing single crystals to produce gem quality stones 
Conductive epitaxial ZnO layers by ALD Conductive epitaxial ZnO layers by ALD Zs. Baji, Z. Lábadi, Zs. E. Horváth, I. Bársony Research Centre for Natural.
Nanoscale Cr 4+ Doped Olivine Crystallites Used In Optical Amplifiers and Lasers Presentation by: Victor Ortiz Mentor: Dr. Alexei Bykov Mentor: Dr. Alexei.
1 Thin Film Optical Filter Fabrication and Characterization Adam Hammouda, Kalamazoo College Dr. David Shelton, UNLV 1.
M.S. Hossain, N.A. Khan, M. Akhtaruzzaman, A. R. M. Alamoud and N. Amin Solar Energy Research Institute (SERI) Universiti Kebangsaan Malaysia (UKM) Selangor,
 “ dark –axis” 10g/l ob-H 2 Pc Pen Writing A P Au (Electrode) CuPc (Electron Donor) PTCDA (Electron Acceptor) ZnO (Hole Blocking Layer) ITO (Transparent.
4.12 Modification of Bandstructure: Alloys and Heterostructures Since essentially all the electronic and optical properties of semiconductor devices are.
This is standard 4-point probe configuration. You can source current through the left probes and measure the voltage through the right probes. OPTICAL.
Thermal Strain Effects in Germanium Thin Films on Silicon Travis Willett-Gies Nalin Fernando Stefan Zollner.
Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. X-ray diffraction (XRD) 2θ-ω scans around (00·2) reflection for InxGa1−xN layers.
Deposition Process To grow WS 2 films, a reactive sputtering process is implemented. In reactive sputtering, Argon atoms are ionized causing them to accelerate.
Identifying Radiative Polaritons in Thin Oxide Films with Experimental and Simulated Dispersion Relations Anita J. Vincent-Johnson 1, James S. Hammonds.
Development of GeSn Devices for Short Wave Infrared Optoelectronics
Graphene for Use in Energy Storage Systems
Student: Dymonn J. Johnson. Mentor: Drs
UNDERGRADUATE COURSES USING THE SMU CLEAN ROOM
Potential Use of Lysenin Channels in Drug Release from Liposomes
MBE Growth of Graded Structures for Polarized Electron Emitters
Student: Nazar Orishchin Mentor: Dr. Jingyi Chen (CHEM)
ELECTRON FIELD EMISSION OF DIAMOND FILMS DEPOSITED WITH
Peptoid Functionalized Nanoparticles for In-Line Contaminant Sensing
2D Phase Transition in Monolayer Germanium Selenide
Microwave plasma enhanced chemical vapour deposition (MWPCVD) of polycrystalline diamond coatings and their characterisations for thermal applications.
Thermoplasmonic Decay of Metal-Polymer Nanocomposites
An Exciting New 3D Material
Another “Periodic” Table!
Fabrication of GaAs nanowires for solar cell devices
Energy, What is it Good For? Mike Day Reading HS, Mathematics
Data Acquisition System in Silicon Carbide
Student: Chandler Bernard Mentor: Dr. Joseph Herzog (PHYS)
Surface morphology of p-GaAs
Zhong-Mei Huang1, Wei-Qi Huang2
High Temperature Characterizations for GaN-based LED Devices
A Concept: Transmitting and Receiving Fiber Optic Signals with Petabit per Second Capacity Tom Juliano ECE-641 February 20, 2003.
Thermal oxidation Growth Rate
Formation of graphitic carbon on metallic substrates: Implications for protoplanetary nebular carbon delivery, and meteoritic sample analysis Chris Tang.
Molecular Beam Epitaxy
Epitaxial Deposition
Power Electronics: cooking up group IV semiconductor materials.
Structure of the SnO2 crystal
Presentation transcript:

Growth and Characterization of GeSn for Infrared Imaging Student: Randy Quinde Mentor: Dr. Fisher Yu (ELEG) Undergraduate School / Major: University of Minnesota / Electrical Engr Microelectronics Photonics Background/Relevance Current semiconductor material within infrared red (IR) devices are expensive for manufacturing and fabrication. Growing group IV elements together, such as germanium tin (GeSn), within chemical vapor deposition (CVD) machines have could reduce the cost and improve the quality of IR devices. Innovation Implementing GeSn within todays technology would greatly reduce the prices of cellphones, computers, and other everyday devices. Lasing GeSn could improve the quality and speed of the internet as studies have shown. Approach Analyze and compare GeSn samples to find parameters of growth of GeSn on the UHV-CVD machine Grow GeSn within Ultra High Vacuum- Chemical Vapor Deposition (UHV-CVD) by disbursing germane and tin tetrachloride into chambers Find the thickness of the GeSn samples by using the VASE ellipsometer Characterize the GeSn samples using photoluminescence (PL) and Raman spectroscopy to gather information on the sample’s quality, bandgap, strain, and crystallinity. UHV-CVD Key Results GeSn was grown at 350oC, 1 torr, 25 sccm of argon(Ar), 10 sccm of germane (GeH4), and 0.02 sccm of tin tetrachloride at varying times. Nucleation occurred between 20-25 minutes of growth of GeSn Growth rate shows that 1 µm would take approximately 200 minutes. Conclusions The growth of GeSn in the UHV-CVD machine was successfully grown in the set parameters. Growths performed with UHV-CVD can now determine and control the thickness of material depending on the length of time. Characterization results indicate the material had low tin (Sn) incorporation, direct bandgap energy, and low optical properties. Research is still needed to study growth rate of GeSn at different temperatures, pressures, and flow rates for UHV-CVD machine. Acknowledgements to Dr. Shui-Qing Yu, Dr. Aboozar Moshleh, Perry C. Grant, Sattar Al-Kabi, Joshua M. Grant, Wei Dou, Bader Alharthi, and Seyed Amir Ghetmiri for their support and assistance. Research Funded by National Science Foundation REU Grant # EEC-1359306 Summer 2015