Laboratory: A Typical Wet Etching Process
- Prepare chemicals.
- Mix chemicals in the proper ratios.
- Heat chemical mixture.
- Etch wafer.
- Remove wafer from the chemical etch solution.
- Rinse wafer.
A Typical Dry Etching Process
- Prepare chamber.
- Load wafers.
-Plasma etch.
- Remove wafers.
A Typical Diffusion Process
- Prepare the source wafers (e. g - Prepare the source wafers (e.g., ceramic wafers of LnP5O14 , which is a mixture of Ln2O3 and P2O5, as a source of P2O5 for P-doping).
- Verify that the diffusion furnace temperature is set (~ 850 °C for P ).
- Using teflon or teflon-tipped tweezers, carefully load the wafers into the quartz boat.
- The wafers should be inserted such that the device side of each is facing an P2O5 source wafer. There are two wafer slots between sources, allowing for a device wafer facing both sides.
- Return quartz boat, which now contains the wafers and sources, to the phosphorus furnace using the quartz boat loader.
- The phosphorus furnace needs to be heated to the temperature (~850 °C for P-doping) at which the diffusion will be performed.
- Begin nitrogen flow through the tube by setting the gas flow rate to a reasonable value (~3000 sccm).
- At the end of the process remove the boat from the furnace and allow the wafers to continue to cool before removing them from the wafer carrier.