Silicon Etch Product Transport by an Inductively Coupled Plasma in Cl2

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Presentation transcript:

Silicon Etch Product Transport by an Inductively Coupled Plasma in Cl2 SFR Workshop May 24, 2001 Mark Kiehlbauch, David Graves, Mark Nierode Berkeley, CA 2001 GOAL: Demonstrate effects of coupled plasma and neutral models on etch product redeposition by 9/30/2001. 5/24/2001

Etch Products in Plasma: CD Effects Example: Silicon Etching with Cl2 Neutral transport and redeposition plays a key role in etch performance. Redeposition of silicon from gas phase on wafer can lead to loss of CD control. Deposition of silicon onto reactor wall requires expensive cleans. Vahedi et.al., 1999 Dry Process Symposium, Tokyo 5/24/2001

The Silicon Lifecycle During Etching 1) SiClx is etched from wafer. 2) SiClx is: ionized/dissociated to depositing species 3) Depositing species: go to walls redeposit on wafer removed by pumping 4) SiClx is etched from walls. 5/24/2001

Role of Gas Inlet Position on Etch Product Redeposition Examine effect of inlet position and flow rate: showerhead vs. center inlet 5/24/2001

Silicon Redeposition on Wafer Inlet position changes the magnitude and profile of redeposition on wafer Si Redep. (Å/min.) 500 sccm R (cm) 5/24/2001

SiCl2 Transport & Inlet Position Showerhead Inlet SiCl2 Flux Center Inlet SiCl2 Flux Inlet Inlet Outlet Outlet Vspec = Vtot + Vspec,dif Vtot Species Mole Fraction 500 sccm Vspec,dif Vspec 5/24/2001

Convective Neutral Transport Center Inlet Overall Neutral Flux Showerhead Inlet Overall Neutral Flux Inlet Inlet Outlet Outlet Overall flow driven by ÑP = f(inlet/outlet position, reactor aspect ratio) and coupling with plasma. 500 sccm 5/24/2001

SiCl2 Diffusive Transport Showerhead Inlet SiCl2 Diffusive Flux Center Inlet SiCl2 Diffusive Flux Inlet Inlet Outlet Outlet SiCl2 diffuses towards inlet and plasma (sinks) and away from wafer and walls (sources). 500 sccm 5/24/2001

2002 and 2003 Goals Convert plasma/neutral code to FEMLAB/MATLAB platform for ease of use and code transferability. Include self-consistent electron kinetics in model, by 9/30/2002. Compare plasma/neutral model to test-bed experimental system: role of etch products in etching, by 9/30/2003. 5/24/2001