Interface Engineering Film Formation Perovskite Electrode Hole transport layer Glass Electron transport layer TCO Generation Defects Passivation Transport Interface Engineering Collection

Formation: Vapor Assist Solution Process CH3NH3PbI3: PbI2(inorganic) + CH3NH3I(organic) (a) (b) (c) (d) PbI2 Film quality: Enhanced conformity Full surface coverage High crystallinity Large grain size CH3NH3PbI3

PbI2 Passivation & Reduced recombination Page 17 – 20 all under the same title? Why? Title should be the central focus of the slide, not a routine thing. Q, Chen, H. P. Zhou, Y. Yang et. al., Nano Lett.,2014, 14, 4158.

Enhance Performance: interface engineering Connecting all the dots, we further improve the efficiency. Combined optimization of the entire carrier pathway has led to a device PCE of 19.3% under AM1.5 illumination without anti-reflective coating; the VOC, JSC and FF are 1.13 V, 22.75 mA/cm2, and 75.01%, respectively (Fig. 3). In general, the devices exhibit VOC = 1.04−1.15 V, JSC = 18.16−22.8 mA/cm2, FF = 66.9−76.3%, and the resulting PCE = 14.5−19.3 %. The average device efficiency is over 16.6%, which shows the good reproducibility of the approach. H. P. Zhou, Q, Chen, Y. Yang et. al., Science, 2014, 345, 542.