Layer Transfer Technology for Micro-System Integration

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Presentation transcript:

Layer Transfer Technology for Micro-System Integration SFR Workshop May 24, 2001 Changhan Yun, Yonah Cho, Adam Wengrow, and Nathan Cheung Berkeley, CA 2001 GOAL: To establish low-temperature micro-system assembly process for sensor integration by 9/30/2001. 5/24/2001

Motivation Low-Temp assembly process enables integration of dissimilar Detector Sensor array Electronics Interconnects Battery Resonators Photon emitters Low-Temp assembly process enables integration of dissimilar microsystems (embedded photon emitter, energy source, sensors, and electronics) 5/24/2001

LED Array Transfer with Laser Liftoff 1. Bond receptor onto GaN sapphire 2. Laser Liftoff (LLO) 3. Acetone bath 4. Bond to any substrate Interfacial decomposition Thermal detachment (~40°C) receptor wafer adhesive adhesive LED handle substrate Sapphire Laser beam Transfer of LED layers from sapphire to silicon or plastic substrate 5/24/2001

LEDs from Sapphire to Silicon Substrates LED’s grown on sapphire Laser-detached GaN surface (bottom surface) LED’s transferred on silicon contact pads Ga residues rough In surface underneath receptor wafer LED LED Indium Silicon Al2O3 epoxy LED * LED’s provided by Oriol Inc., Santa Clara, CA 5/24/2001

Blue LED Transferred on Silicon Substrate From a distance Under a microscope probe tip probe tip No performance degradation after layer transfer! 5/24/2001

Low-Temperature Silicon Device Layer Transfer 1. H+ Implantation through MOS devices 2. Wafer Bonding at low temperature 3. Mechanical bending for layer transfer Device Region Si donor wafer Hydrogen peak H+ Glued metal pad SiO2 Si handle wafer ~10 lb·ft Demonstrates low-temperature mechanical cleavage of Si layer 5/24/2001

Surface Roughness of Mechanically Transferred Silicon Layer RMS roughness ~ 5nm 5/24/2001

Concerns : Gate Oxide Degradation due to Hydrogen Implantation Leakage current measurement through W=10mm, L=1.5mm gate oxide 1. Dose Dependence 2. Antenna Ratio (AR) Dependence 18Å 50Å SILC For 50Å Gox, SILC increases with Hydrogen dose and AR For 18Å Gox, No SILC was detected. 5/24/2001

2002 and 2003 Goals By 9/30/2002 Incorporate light emitting devices on sensor wafers Demonstrate silicon layer transfer for subsystem encapsulation (e.g. batteries) By 9/30/2003 Design interconnection schemes between the dissimilar microsystems Demonstrate integration of signal and data processing systems with photonics and MEMS 5/24/2001