Microelectronics Research Group

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Presentation transcript:

Microelectronics Research Group FORTH/IESL 20 person-team Since 1986 Microelectronics Research Group 6 senior researchers 5 technical staff + students and post-docs Compound semiconductors GaAs, SiC, GaN Si Objective : material and device technology of compound semiconductors

Unique facility in Greece Material Growth GaAs SiC GaN Characterisation Device processing Microelectronics HEMTs, MMICs, RF-MEMS Optoelectronics LDs, LEDs, Detectors

Equipment I 200 m2 of clean rooms (class 1000) GaAs SiC GaN 3 molecular beam epitaxy systems

Equipment II Full processing line for microelectronic and optoelectronic devices Lithography down to 0.3 mm E-gun metal evaporator UV mask aligner PECVD RIE

Equipment III Characterisation Optical (including at cryogenic temp.) Structural (AFM, XRD…) Electrical (including RF-measurements up to 20 GHz)