Team Awesome += 5 PICo Design Presentation

Slides:



Advertisements
Similar presentations
P. Fischer, TI, Uni Mannheim, Seite 1CBM Collaboration Meeting, GSI, (FEE Session): CAM CAM Design in UMC0.18µm A CAM is required for address.
Advertisements

Amplifying Signals Breadboarding: from a diagram to an actual working amplifier.
1 The 2-to-4 decoder is a block which decodes the 2-bit binary inputs and produces four output All but one outputs are zero One output corresponding to.
1 Specifications Functionality: AND, OR, XOR, ADD Maximum propagation delay : 2ns Power budget: 30mW Area: 200 µm ×400µm Prepared by: Christie Ma, Manjul.
Semiconductor Memory Design. Organization of Memory Systems Driven only from outside Data flow in and out A cell is accessed for reading by selecting.
5-1 Memory System. Logical Memory Map. Each location size is one byte (Byte Addressable) Logical Memory Map. Each location size is one byte (Byte Addressable)
Microprocessor System Design. Outline Address decoding Chip select Memory configurations.
1 8-bit X 8-bit SRAM and 3 X 8 Decoder Irina Vazir, Prabhjot Balaggan and Sumandeep Kaur Advisor: Dr. David Parent December 06, 2004.
Los tOHMales CalI e ntes Lauren Cash, Chuhong Duan Rebecca Reed, Andrew Tyler ECE 4332: Intro to VLSI.
ENGIN112 L30: Random Access Memory November 14, 2003 ENGIN 112 Intro to Electrical and Computer Engineering Lecture 30 Random Access Memory (RAM)
6-BIT THERMOMETER CODER
1 4-bit Decimation Filter Rashmi Joshi Siu Kuen(Steve) Leung Cuong Trinh Advisor: Dr. David Parent December 5, 2005.
1 GPS Waypoint Navigation Team M-2: Charles Norman (M2-1) Julio Segundo (M2-2) Nan Li (M2-3) Shanshan Ma (M2-4) Design Manager: Zack Menegakis Presentation.
Huffman Encoder Project. Howd - Zur Hung Eric Lai Wei Jie Lee Yu - Chiang Lee Design Manager: Jonathan P. Lee Huffman Encoder Project Final Presentation.
Die-Hard SRAM Design Using Per-Column Timing Tracking
CS 151 Digital Systems Design Lecture 30 Random Access Memory (RAM)
Sprinkler Buddy Presentation #8: “Testing/Finalization of all Modules and Global Placement” 3/26/2007 Team M3 Kartik Murthy Panchalam Ramanujan Sasidhar.
1 GPS Waypoint Navigation Team M-2: Charles Norman (M2-1) Julio Segundo (M2-2) Nan Li (M2-3) Shanshan Ma (M2-4) Design Manager: Zack Menegakis Presentation.
1 GPS Waypoint Navigation Team M-2: Charles Norman (M2-1) Julio Segundo (M2-2) Nan Li (M2-3) Shanshan Ma (M2-4) Design Manager: Zack Menegakis Presentation.
Digital Signal Processor Bryant Carroll Matthew Carroll Bobby Kluttz Ian Morris.
High Speed 64kb SRAM ECE 4332 Fall 2013 Team VeryLargeScaleEngineers Robert Costanzo Michael Recachinas Hector Soto.
Review: Basic Building Blocks  Datapath l Execution units -Adder, multiplier, divider, shifter, etc. l Register file and pipeline registers l Multiplexers,
High Speed Cache For: PICo Board Proposal By: Team XOR NOTE TO FUTURE VIEWERS OF THESE SLIDES: ALL YELLOW TEXT BOXES ACCOMPANIED BY ARROWS IN THE DIRECT.
הפקולטה למדעי ההנדסה Faculty of Engineering Sciences.
CPEN Digital System Design
Memory Devices on DE2-115 數位電路實驗 TA: 吳柏辰 Author: Trumen.
McKenneman, Inc. SRAM Proposal Design Team: Jay Hoffman Tory Kennedy Sholanda McCullough.
 Seattle Pacific University EE Logic System DesignMemory-1 Memories Memories store large amounts of digital data Each bit represented by a single.
Low-Power SRAM ECE 4332 Fall 2010 Team 2: Yanran Chen Cary Converse Chenqian Gan David Moore.
SRAM Generator -Satya Nalam. 2 Motivation SRAM is an integral part of most SoCs Goal: Automate SRAM design process Technology-independence User-independence.
Project SRAM Stevo Bailey Kevin Linger Roger Lorenzo John Thompson ECE 4332: Intro to VLSI.
Integrated VLSI Systems EEN4196 Title: 4-bit Parallel Full Adder.
CMPEN 411 VLSI Digital Circuits Spring 2009 Lecture 22: Memery, ROM
SRAM Design for SPEED GROUP 2 Billy Chantree Daniel Sosa Justin Ferrante.
Bit Cell Ratio Testing. Thin Cell Advantages: Smallest possible area of 6T Bit Cell, Can be mirrored (saves area = can reduce distance between n-wells.
Multiplexors Decoders  Decoders are used for forming separate signals for different combination of input signals.  The multiplexer circuit is a digital.
Timer 1 and 2 operation, PWM Principles. Timer 1 Operation.
Low Power SRAM VLSI Final Presentation Stephen Durant Ryan Kruba Matt Restivo Voravit Vorapitat.
Appendix B The Basics of Logic Design
Lecture 3. Lateches, Flip Flops, and Memory
DREAM TEAM 2 Roto, Holiano, Chaka
Designing a Low Power SRAM for PICo
Memory Interfacing.
Low-Power SRAM Using 0.6 um Technology
Digital Decode & Correction Logic
Counters and Registers
Reference: Chapter 3 Moris Mano 4th Edition
V-IRAM Register File Iakovos Mavroidis
Latches and Flip-flops
EE345: Introduction to Microcontrollers Memory
Figure 13.1 MIPS Single Clock Cycle Implementation.
VGA INTERFACE Ly Le Department of Electrical Engineering
Combinatorial Logic Design Practices
ECE 434 Advanced Digital System L12
1 Gbit/s Serial Link 1 Gbit/s Data Link Using Multi Level Signalling
Synthesizing SRAM timing and Periphery using Synopsis
Amr Amin Preeti Mulage UCLA CKY Group
STT-MRAM Tapeouts: IBM 65nm & IBM 45nm SOI
E190Q – Final Project Presenation
Chip Layout 27 F2 50 F2 35 F2 LUT 27 F2 50 F2 35 F2 27 F2 50 F2 35 F2
Part I Background and Motivation
SRAM Generator - Satya Nalam.
第四章 80386的存贮器和输入/输出接口 作业:P335 5,7,13,17,21,25,36,37,41,44,45,46,48,52,65 21:46.
Daniel Klopp, Yao Yao, Hoa Nguyen, Roy Rabindranath December 1, 2009
IBM 90nm Test Chip Results
ECE 432 Group 4 Aaron Albin Jisoon Kim Kiwamu Sato
Sequential Logic.
Overview Last lecture Timing; Hazards/glitches
Lecture 20: CAMs, ROMs, PLAs
Quick Presentation: 16Mb Asynchronous SRAM with ECC ECC = Error-Correcting Code New High-Speed, Low-Power Asynchronous SRAMs With On-Chip ECC to Improve.
Presentation transcript:

Team Awesome += 5 PICo Design Presentation Douglas Grosvenor, Terence Crumbley, Jeffrey Gaither

Overview Background Design Testing Metrics Questions

Background PICo SRAM Low power High speed 1 Mb Long lifetime Metric: (Total Power)^2 * Delay * Area High speed 64 kb Encryption/Compression Metric: (Total Power) * Delay^2 * Area

Design 32bit words 2 words per row 64 rows per block 4096 bits per block 16 blocks array

Array Diagram

Block Diagram

Bitcell Layout

Design Cont’ Read/Write Signal System Pulse Generator WL Generator Decoder

Read/Write Signal System

Pulse Generator

Pulse Signal Blue – Input signal Orange – Output signal

Word Line Generator

6 to 64 Decoder

Testing Approach One Approach Two Corner Simulation Four Bitcells RC Based on extracted layout Approach Two Full word, read/write Active/Inactive Different words

Simulation of Read/Write

Analysis Metrics Area*(Delay^2)*Power Delay Power Area metric 1.75e11 mW*ns2*µm2 bitcell area 218.4µm2 total area 28M µm2 read power 111.43mW write power 72.39mW total power 207.005mW read delay 5.5ns write delay 2.5ns total delay

Conclusion Background Design Testing Metrics

Questions?

Sense Amp

2 to 4 Decoder

2 to 4 Enable Dec.

Bitcell

Simulation

Simulation cont’d

Simulation cont’d

Problems Sense Amp Wiring problems