Tobias Bus, Benjamin Linnik, Michael Deveaux, Ali Yazgili

Slides:



Advertisements
Similar presentations
Radiation damage in silicon sensors
Advertisements

1 Annealing studies of Mimosa19 & radiation hardness studies of Mimosa26 Dennis Doering* 1, Samir Amar-Youcef 1,3,Michael Deveaux 1, Melissa Domachowski.
New Operation Scenarios for Severely Irradiated Silicon Detectors G. Casse University of Liverpool 1 VERTEX 2009, Mooi Veluwe (NL) September 2009.
Radiation Damage to Silicon Sensors DCC 11/14/02 DRAFT.
Random Telegraph Signal (RTS) in CMOS Monolithic Active Pixel Sensors (MAPS) for charged particle tracking. Outline Reminder: The operation principle of.
CHARGE COUPLING TRUE CDS PIXEL PROCESSING True CDS CMOS pixel noise data 2.8 e- CMOS photon transfer.
Characterisation and Reliability testing of THz Schottky diodes. By Chris Price Supervisor: Dr Byron Alderman December 2006 Preliminary.
10 Nov 2004Paul Dauncey1 MAPS for an ILC Si-W ECAL Paul Dauncey Imperial College London.
17 May 2007LCWS analysis1 LCWS physics analysis work Paul Dauncey.
Monolithic Active Pixel Sensors M. Deveaux, Goethe University Frankfurt and CBM on behalf of the PICSEL group IPHC Strasbourg (Marc Winter et al.). (CPS.
Sensors for CDF RunIIb silicon upgrade LayerR min (cm)1 MeV eq-n cm * * * * * *10.
Status of the Micro Vertex Detector M. Deveaux, Goethe University Frankfurt for the CBM-MVD collaboration.
Status of the Prototype of the CBM Micro Vertex Detector M. Deveaux, Goethe University Frankfurt for the CBM-MVD collaboration.
SPiDeR  First beam test results of the FORTIS sensor FORTIS 4T MAPS Deep PWell Testbeam results CHERWELL Summary J.J. Velthuis.
Semiconductor detectors
Charge collection studies on heavily diodes from RD50 multiplication run G. Kramberger, V. Cindro, I. Mandić, M. Mikuž Ϯ, M. Milovanović, M. Zavrtanik.
15-17 December 2003ACFA workshop, Mumbai - A.Besson R&D on CMOS sensors Development of large CMOS Sensors Characterization of the technology without epitaxy.
1 Improved Non-Ionizing Radiation Tolerance of CMOS Sensors Dennis Doering 1 *, Michael Deveaux 1, Melissa Domachowski 1, Michal Koziel 1, Christian Müntz.
Device simulation of CMOS Pixel Sensors with synopsys
Status of the R&D on MAPS in Strasbourg and Frankfurt Outline: Operation principle of MAPS (a reminder) Fast readout Radiation hardness System integration.
Radiation Damage in the CMS Strips Tracker Christian Barth on behalf of the CMS Tracker Collaboration.
Semi-conductor Detectors HEP and Accelerators Geoffrey Taylor ARC Centre for Particle Physics at the Terascale (CoEPP) The University of Melbourne.
Radiation tolerance of Monolithic Active Pixel Sensors (MAPS) Outline: Operation principle of MAPS Radiation tolerance against ionising doses (update)
1 Read out & data analysis of the MVD demonstrator S. Amar-Youcef, M. Deveaux, I. Fröhlich, J. Michel, C. Müntz, C. Schrader, S. Seddiki, T. Tischler,
VI th INTERNATIONAL MEETING ON FRONT END ELECTRONICS, Perugia, Italy A. Dorokhov, IPHC, Strasbourg, France 1 NMOS-based high gain amplifier for MAPS Andrei.
High-resolution, fast and radiation-hard silicon tracking station CBM collaboration meeting March 2005 STS working group.
1 Radiation damage effects in Monolithic Active Pixel Sensors Implemented in an 0.18µm CMOS process Dennis Doering, Goethe-University Frankfurt am Main.
Fully depleted MAPS: Pegasus and MIMOSA 33 Maciej Kachel, Wojciech Duliński PICSEL group, IPHC Strasbourg 1 For low energy X-ray applications.
1 An introduction to radiation hard Monolithic Active Pixel Sensors Or: A tool to measure Secondary Vertices Dennis Doering*, Goethe University Frankfurt.
Minni Singla & Sudeep Chatterji Goethe University, Frankfurt Development of radiation hard silicon microstrip detectors for the CBM experiment Special.
IPHC-LBNL meeting 3-5 April 2008 Radiation damage in the STAR environment and performance of MAPS sensors Compilation of different test results mostly.
Recent developments on Monolithic Active Pixel Sensors (MAPS) for charged particle tracking. Outline The MAPS sensor (reminder) MIMOSA-22, a fast MAPS-sensor.
Update on Micron productions - Comparison of AC & DC coupled devices - Marko Milovanovic*, Phil Allport, Gianluigi Casse, Sergey Burdin, Paul Dervan, Ilya.
1 Radiation Hardness of Monolithic Active Pixel Sensors Dennis Doering, Goethe-University Frankfurt am Main on behalf of the CBM-MVD-Collaboration Outline.
Technology Overview or Challenges of Future High Energy Particle Detection Tomasz Hemperek
Test of the MAPS add-on board S. Amar-Youcef, M. Deveaux, D. Doering, C. Müntz, S. Seddiki, P. Scharrer, Ch. Schrader, J. Stroth, T. Tischler.
PIXEL Slow Simulation Xin Li 3/16/2008. CMOS Active Pixel Sensor (APS) Epitaxy is a kind of interface between a thin film and a substrate. The term epitaxy.
Radiation hardness of Monolithic Active Pixel Sensors (MAPS)
A Fast Monolithic Active Pixel Sensor with in Pixel level Reset Noise Suppression and Binary Outputs for Charged Particle Detection Y.Degerli 1 (Member,
M. Deveaux, CBM-Collaboration-Meeting, 25 – 28. Feb 2008, GSI-Darmstadt Considerations on the material budget of the CBM Micro Vertex Detector. Outline:
20/12/2011Christina Anna Dritsa1 Design of the Micro Vertex Detector of the CBM experiment: Development of a detector response model and feasibility studies.
A. Dorokhov, IPHC, Strasbourg, France 1 Description of pixel designs in Mimosa22 Andrei Dorokhov Institut Pluridisciplinaire Hubert Curien (IPHC) Strasbourg,
T. Lari – INFN Milan Status of ATLAS Pixel Test beam simulation Status of the validation studies with test-beam data of the Geant4 simulation and Pixel.
-1-CERN (11/24/2010)P. Valerio Noise performances of MAPS and Hybrid Detector technology Pierpaolo Valerio.
Eleuterio SpiritiILC Vertex Workshop, April On pixel sparsification architecture in 130nm STM technology ILC Vertex Workshop April 2008 Villa.
STAR meeting, June 2009, Strasbourg A. Dorokhov, IPHC, Strasbourg, France 1 Improved radiation tolerance of MAPS using a depleted epitaxial layer.
1 Summary of the radiation hardness studies of Frankfurt AD AD vanced MO MO nolithic S S ensors for IKF Frankfurt: Dennis Doering*, Samir Amar-Youcef,
ADC values Number of hits Silicon detectors1196  6.2 × 6.2 cm  4.2 × 6.2 cm  2.2 × 6.2 cm 2 52 sectors/modules896 ladders~100 r/o channels1.835.
1 An X-ray fluorescence spectrometer using CMOS-sensors AD AD vanced MO MO nolithic S S ensors for Supported by BMBF (06FY9099I and 06FY7113I), HIC for.
Comparison of the AC and DC coupled pixels sensors read out with FE-I4 electronics Gianluigi Casse*, Marko Milovanovic, Paul Dervan, Ilya Tsurin 22/06/20161.
ECFA Durham, September Recent progress on MIMOSA sensors A.Besson, on behalf of IReS/LEPSI : M. Deveaux, A. Gay, G. Gaycken, Y. Gornushkin, D. Grandjean,
Radiation damage studies in LGAD detectors from recent CNM and FBK run
Dima Maneuski, Advances in rad-hard MAPS 2016, Birmingham
Ivan Peric, Christian Kreidl, Peter Fischer University of Heidelberg
Design and Characterization of a Novel, Radiation-Resistant Active Pixel Sensor in a Standard 0.25 m CMOS Technology P.P. Allport, G. Casse, A. Evans,
Updates on vertex detector
Graeme Stewarta, R. Batesa, G. Pellegrinib, G. Krambergerc, M
Update on Annealing Studies for Severely Irradiated Silicon Detectors
ADvanced MOnolithic Sensors for
The CBM sensor digitizer
Radiation tolerance of MAPS
Study of radiation damage induced by 26MeV protons and reactor neutrons on heavily irradiated MCz, FZ and Epi silicon detectors N. Manna Dipartimento.
of APS (Full Depleted FDAPS, MAPS and Hybrid Technology HPD)
Results from the first diode irradiation and status of bonding tests
Wie beheben unsere Experten unter Windows 10 Technische Unterstützung Nummer Zwischenablage Probleme?
SCIENTIFIC CMOS PIXELS
Radiation hardness of fully depleted
Radiation tolerant fibres for LHC controls and communications
Beam Test Results for the CMS Forward Pixel Detector
Click the placeholder text and type your own text.
Presentation transcript:

Tobias Bus, Benjamin Linnik, Michael Deveaux, Ali Yazgili ADvanced MOnolithic Sensors for News on radiation hardness studies for the CBM MVD Tobias Bus, Benjamin Linnik, Michael Deveaux, Ali Yazgili Institut für Kernphysik, Goethe Universität Frankfurt am Main 26.02.2018 Ladies and gentleman, my name is Tobias Bus and ill give you a short talk about radiation hardness of MAPS for the cbm mvd.

Leakage currents in MAPS +3.3V Reset +3.3V Output SiO2 SiO2 SiO2 N++ N++ P+ N+ Ileak 50µm P- 15µm Lets have a look at the sensor. The active volume is in the middle. Above is the higher doped P-Well, which has N implantations, that create depleted areas at the pn-junctions. The diode here is collecting charge from the active volume. By charge I mean signal electrons as well as leakage current. So – what do we know about leakage current? P+ Leakage current: Adds shot noise May clear the signal from the pixel (more later) Tobias Bus, DPG 2018, Bochum

Radiation tolerance: 5 ∗10 14 𝑛 𝑒𝑞 𝑐𝑚² PIPPER-2: „Fully depleted“ MAPS with AC- coupling Last year we tested some monolithic active pixel sensors, that were manufactured in a tower jazz process. An improvement of this process is the AC coupling which allows us to apply a higher voltage to the collecting diode, which increases the depleted volume of the sensor. The advantage of fully depleted sensors is a higher radiation tolerance, but on the other hand they struggle with effects of higher leakage currents, which could be a thing for the PIPPER-2 sensor as we can see on this plot: The sensor works fine, if it is heavily cooled. With higher teamperatures only a fraction of the original charge is collected. This could be a cause of charge clearing induced by high leakage currents. Signal amplitude highly relies on temperature. Charge clearing due to high leakage current? Tobias Bus, DPG 2018, Bochum

Leakage current – What do we know? Fully depleted PIN-diodes: Which volume? Δ𝐼=𝛼⋅ Φ 𝑒𝑞 ⋅𝑉 𝛼≈4⋅ 10 −17 𝐴/𝑐𝑚 G. Lindström, NIM-A 512.1 (2004): 30-43 Leakage current: scales with volume and radiation dose. does not depend on doping. What do we know? Earlier studies have shown, that for fully depleted sensors the leakage currents scales linearally with the radiation dose and the volume and does not depend on doping. Is it the same for the PIPPER-2 sensor and if yes, which volume is meant in the formula? Is it the active – or just the depleted volume? Does the fully depleted sensor has a higher leakage current than the not fully depleted one? So it has to be checked which volume causes the leakage current. Known to hold for depleted sensors. MAPS are not (always) depleted. Open issue: Valid for MAPS? Measure leakage current Tobias Bus, DPG 2018, Bochum

Open issue: How to measure depleted volume Seed (1 Pixel) Ndepl X-rays Depleted Summed (up to second next neighbor) Nepi Depletedvolume: 𝑉 𝑑𝑒𝑝𝑙 ≈ 𝑁 𝑑𝑒𝑝𝑙 𝑁 𝑒𝑝𝑖 ⋅ 𝑉 𝑝𝑖𝑥𝑒𝑙 Known from design Therefore studies with older Mimosa19 sensors were made, because they have 3T pixels, which allow us to directly measure the leakage current and they are not fully depleted. This comes in handy for us because just a fraction of the photons convert in the depleted volume and deposite its charge there. The charge of all other hits is shared by several adjacent diodes. To determine the just mentioned fraction one can devide the number of entries in this peak where all signal electrons are gathered by the entries of all hits Hierf+ür wurden Studien an veralteten Mi-19 Sensoren durchgeführt. Diese Sensoren eigenen sich besonder für eine solche Studie, da sie 3T Pixel enthalten und dadruch der Leckstorm direkt gemessen werden kann. Außerdem sind die Sensoren NICHT voll depletiert, sodass sich das depletierte Volumen vom aktiven Volumen deutlich unterscheidet. Daher kann man prüfen, welches der beiden Columina letzzendlich den Leckstrom ausmacht. Tobias Bus, DPG 2018, Bochum

Leakage current in MAPS? Literature 𝛼≈4⋅ 10 −17 𝐴/𝑐𝑚 Observed 𝛼≈3.4⋅ 10 −17 𝐴/𝑐𝑚 MIMOSA-19 Non-depleted sensor Preliminary Mismatch compatible with room temperature annealing. Ali Yazgili, bachelor thesis, in progress Depleting also increases the leakage current Depleted volume was used. Epitaxial layer delivers mostly no leakage current. Leakage current seems to scale with depleted volume. Tobias Bus, DPG 2018, Bochum

Leakage current in SB pixels Visible signal Qs Qphy Signal charge [a.u.] Lost Visible signal Qs Qphy High leakage current Lost Requirementsfor good (>90%) signal: 𝜏 𝑚𝑖𝑛 >10 𝑡 𝑖𝑛𝑡 =50µs => 𝐼 𝐿𝑚𝑎𝑥 ≈500 fA t [readout cycles] Collected charge Leakage current 𝑄 𝑆 = 𝑄 𝑃ℎ𝑦 ⋅ exp − 𝑡 𝜏 with 𝜏≈ 𝑘 𝐵 𝑇 𝐶 𝑒 ⋅ 1 𝐼 𝑙𝑒𝑎𝑘 with 𝐶≈10 fF Clearing of the pixel is accelerated by radiation induced leakage current. To obtain good signal leakage current must remain limited

Relevant for depleted sensors? Estimate highest acceptable leakage current, e.g. for MAPS with 5µs integration time Requiredforgood>90% signal: 𝜏 𝑚𝑖𝑛 >10 𝑡 𝑖𝑛𝑡 =50µs => 𝐼 𝐿𝑚𝑎𝑥 ≈500 fA± a factor More depletion (full matrix) Comparison with data: Ileak of heavily irradiated sensor exceeds limit. Cooling helps. 500 fA/pixel CBM-MVD PIPPER-II, IPHC Strasbourg Unsere Messungen haben gezeigt, dass diese Bedingung nur erfüllt ist, wenn wir die stark depletierten sensoren (zeige auf den den >20 V Bereich), wenn extrem stark gekühlt wird. In diesem Plot nur bis -15 Grad. Extreme Unterschiede im Leckstrom in Abhängigkeit von der Bestrahlung uind Temperatur. Austoben. Min 2 Min. Conclusion: Depletion… Improves charge collection in heavily irradiated sensors. Increases leakage current of heavily irridiated sensors. => Fast readout and/or cooling is needed to exploit advantages. Tobias Bus, DPG 2018, Bochum