EE 201C Modeling of VLSI Circuits and Systems Chapter 1 Introduction

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EE 201C Modeling of VLSI Circuits and Systems Chapter 1 Introduction Instructor: Lei He Email: LHE@ee.ucla.edu

Instructor Info Email: LHE@ee.ucla.edu Phone: 310-206-2037 Office: Boelter Hall 6731D Office hours: Tus 2-3pm Thur 4-5pm or by appointment The best way to reach me: Email with EE201 in subject line I will first briefly give the background and overview of my dissertation, then cover more details for an important component of the dissertation: the LR-base STIS optimization. Here LR refers to local refinement, and STIS refers to simultaneous transistor and interconnect sizing. Finally, we draw conclusions and discuss future works.

VLSI Design and Verification Cycle System Specification Functional Design and Verification X=(AB*CD)+(A+D)+(A(B+C)) Y=(A(B+C))+AC+D+A(BC+D)) Logic Design and Verification Circuit Design and Verification Verification techniques Formal verification Logic/circuit simulation Functional and logic emulation

VLSI Design and Verification Cycle (cont.) Physical Design and Verification Fabrication and Testing Packaging Layout verification LVS, DRC, ERC Timing, SI, PI, DFM (applied to circuit design as well) Modeling and simulation is a core component for design and verification considering timing/SI/PI/DFM

CAD Courses at UCLA EE dept. CS dept. EE201A Fundamental to CAD (Spring) Basics to all aspects of CAD More on combinatorial optimization EE201C this course Modeling and simulation of timing, signal/power integrity, power and thermal, and manufacturability Co-development of modeling and optimization CS dept. CS258F Physical design of VLSI circuits CS258G Logic synthesis of VLSI circuits CS259 High Level Synthesis (taught by Miodrag) I will first briefly give the background and overview of my dissertation, then cover more details for an important component of the dissertation: the LR-base STIS optimization. Here LR refers to local refinement, and STIS refers to simultaneous transistor and interconnect sizing. Finally, we draw conclusions and discuss future works.

EE201C Prerequisites Official prerequisite EE116B VLSI System Design But mainly self-contained Knowledge to help you appreciate more CS180 Introduction to algorithms I will first briefly give the background and overview of my dissertation, then cover more details for an important component of the dissertation: the LR-base STIS optimization. Here LR refers to local refinement, and STIS refers to simultaneous transistor and interconnect sizing. Finally, we draw conclusions and discuss future works.

201C Course Outline and Schedule Power and thermal modeling (2 weeks) Power and thermal modeling in FPGA and microprocessor Report and presentation on ITRS roadmap Interconnect modeling and optimization (4 weeks) Interconnect extraction Model order reduction Signal integrity and power integrity Project 1: (around 5th week) Design for manufacturability (3 weeks) CMOS device modeling and process variation modeling Stochastic static timing analysis Final project by end of the quarter (or one week afterwards)

ITRS Assignment Read ITRS roadmap newest edition ITRS: International technology roadmap for semiconductor Executive summary + one chapter related to your research interest Write a four-page summary to discuss the selected chapter Use the style of ACM conference papers Prepare five-page slides for short-presentation Report due by midnight of Sunday, Oct 7th All reports in style of ACM conferences http://www.acm.org/sigs/pubs/proceed/template.html Submitted by email in pdf files

Projects Project 1: Matlab coding of PRIMA model order reduction method Majority of program is given Required for every one Final project (one of the following two): One-person survey and critic of selected topic (at most 35%) Individual programming project for a team of 2 to 3 persons Any topic agreed by instructor Up to 30 minute presentation during the finals week, like a conference talk Up to 12 page report Use ACM style http://www.acm.org/sigs/pubs/proceed/template.htm

More on Final Projects Final project could be supervised by Prof. Puneet Gupta With expertise on design for manufacturability, and manufacture for design He will give one or two lectures in this class and is looking for research assistants

References for this Course Selected papers leading journals and conferences Tan and He, “Advanced Model Order Reduction Techniques for VLSI Designs”, Cambridge University Press, pp 1-217, 2006 H. Bakoglu, Circuits, Interconnects, and Packaging for VLSI, Addison Wesley Web site of previous year http://eda.ee.ucla.edu/EE201A-04Spring/index.html I will first briefly give the background and overview of my dissertation, then cover more details for an important component of the dissertation: the LR-base STIS optimization. Here LR refers to local refinement, and STIS refers to simultaneous transistor and interconnect sizing. Finally, we draw conclusions and discuss future works.

Related VLSI CAD Conferences ACM IEEE Design Automation Conference (DAC) http://www.dac.com (San Diego, Young student program) International Conference on Computer Aided Design(ICCAD) Design, Automation and Test in Europe (DATE) Asia and South Pacific Design Automation Conference (ASP-DAC) International symposium on physical design (ISPD) International symposium on low power electronics and design International symposium on field programmable gate array IEEE International Symposium on Circuits and Systems (ISCAS)

Related VLSI CAD Journals IEEE Transactions on CAD of Circuits and systems (TCAD) IEEE Trans. on VLSI Systems (TVLSI) ACM Trans. on Design Automation of Electronic Systems (TODAES) IEEE Transactions on Circuits and Systems (TCAS) IEEE Trans. on Computer

Grading Policy Matlab Project 1 20% Course presentation 30% ITRS report and presentation 5% Other presentations 25% Final project 50% A  score > 85 I will first briefly give the background and overview of my dissertation, then cover more details for an important component of the dissertation: the LR-base STIS optimization. Here LR refers to local refinement, and STIS refers to simultaneous transistor and interconnect sizing. Finally, we draw conclusions and discuss future works.

Course Presentation (20%) 2~3 student a team, one or two talks per team Each talk surveys one topic (topics specified by me on a continual basis) One on classic problem (may provide slides) One on frontier research (need to prepare slides) Prepare slides for a 45 minute presentation slides prepared jointly either all students share the presentation or I will select the speaker randomly at the presentation time For either talk, prepare a web site that should contain a report based on your survey, a bibliography, and links to resources and of course your slides

Who should take this course It is another course Discuss wide scope of knowledge But research (presentation + project) on your own focus For students who are motivated to Learn SI, power/thermal, DFM for advanced designs Learn algorithm basics without taking CS280 Understand CAD better Become a CAD professional I will first briefly give the background and overview of my dissertation, then cover more details for an important component of the dissertation: the LR-base STIS optimization. Here LR refers to local refinement, and STIS refers to simultaneous transistor and interconnect sizing. Finally, we draw conclusions and discuss future works.