2 ASIC Design Methodology Contents 1) Definition 2) Design Representation(Top-down, B-S-P) 3) Design Objectives 4) ASIC Types 5) ASIC Design Process 6) Cost Analysis

1) Definition of ASIC ASIC is application-specific. (vs. General-Purpose, Commodity or Standard IC i.e., memory, microprocessor) ASIC can become ASSP(Application-Specific Standard Product) if volume becomes large.(ex:MODEM, disk controller) ASIC integrates many block in one chip. (Today’s board is tomorrow’s ASIC.)

2) Design Representation using Gajski’s Y-chart

3) Design Objectives low performance FPGA Gate array C BIC NRE Cost Full-custom high long PTAT(Product Turn-around Time) Per-chip cost(chip area) high

4) ASIC Types PLD PAL(device name), PLA(circuit style) ; FPGA all AND-OR plane logic(two-level logic) FPGA Gate Array(with or without embedded block, ex;memory) Standard Cell(w. or w/o macro) Compiled block ; datapath, RAM, ROM, multiplier Full - Custom Semi-custom IC (ASIC in narrow sense)

Important elements in ASIC Design System specification in-house CAD tools IP ASIC design library Commercial CAD tools ASIC foundry

Programmable logic device(PLD) die. The macrocells typically consist of programmable array logic followed by a flip-flop or latch. The macrocells are connected using a large programmable interconnect block.

Field-programmable gate array(FPGA) die. All FPGAs contain a regular structure programmable interconnect.

Two-step manufacturing Full-custom fabrication Semi-custom fabrication Standard phase custom phase

Standard & Custom Masks Two-step manufacture : First(deep) processing steps Base wafers Standard masks Custom masks Customization : contacts & metal layers ASIC

Architecture Specifications Master array = core + I/O pads Core : - macro-architecture number & distribution of basic core cells embedded(specialized) structures - micro-architecture isolation method : gate or oxide isolation predefined channels or channelless layout available devices : transistors, capacitors, resistors, … NMOS/PMOS transistor count ratio number of contacts to each transistor gate, source or drain spacing between transistors, or transistor pitch identical or variable size transistors relative size of the NMOS and PMOS transistors layout of the basic core cell I/O pads - number, functional capabilities, size, ...

Comparison of Various ASIC Methodologies PLDs, PALs, EPLDs : < 2K gates field programmable AND/OR arrays with latches use (E)EPROM or (anti)fuse devices field programmable gate arrays(FPGA) : < 5K gates(1972), £ 100K gates(1998) electrically programmable SRAM, antifuse or EPROM devices logic mapped into predefined blocks programmable interconnections gate arrays, sea-of-gates(SOG) : £ 200K gates personalized with metals & contacts standard cell compiled cells datapath, ROM, RAM macro-based & full-custom : all mask layers personalized dense & high performance Rapidly changing designs low volume low complexity High volume complex stable designs

Field Programmable Gate Arrays K Fill the gap between PALs and classical(mask programmable) gate arrays architecture : array of configurable logic blocks(gates, multiplexers, flip-flops) predefined routing channels filled with interconnection wires wires are programmable programming technology : EPROM, anti-fuse, or SRAM. SRAM : volatile but reconfigurable configuration Xilinx EPROM : non-volatile and reprogrammable, Altera anti-fuse circuits : permanent programming Actel size : up to 10K gate, (now 200K gates) speed is comparable to PALS.

First Generations of Gate Arrays First gate arrays : one programmable metal layer fixed contact locations extensive use of polysilicon for routing 2- or 3- transistor cell -> 2- or 3-input NAND (NOR) gates later improvements : use several basic cells to implement more complex macros programmable contacts second programmable metal layer + vias P N Predefined channel P N

Second Generation : Sea-of-Gates CHANNELLESS LAYOUT suppression of predefeined channels array entirely filled up with transistors connections are routed over unused transistors GATE ISOLATION vs. OXIDE ISOLATION suppression of the gaps in the diffusion continuous strips of diffusion with equally spaced transistors basic cell = 1N & 1P electrical isolation made by connecting a gate to VSS(NMOS) or VDD(PMOS) OTHER VARIANTS & IMPROVEMENTS : embedded arrays RAM-compatible basic cell additional metal layers VDD P N VSS Gate isolation VDD P N VSS Oxide isolation

Gate Isolation vs Oxide Isolation ADVANTAGES OF GATE ISOLATION : flexibility in macro width(one transistor increment) density : transistor gate length smaller than diffusion-diffusion distance full merging of source & drain PROBLEMS WITH GATE ISOLATION : N-and P-gate need to be physically separated on very large & noisy circuits, glitches on power supply lines may weaken the isolation for short times

Channelled versus Channelless Array Flexibility in channel definition(position & width) over-the-cell routing higher packing density RAM-compatible supports variable-height cells & macrocells now universally used Routing problem is simpler OK with only one metal

Routing Channels Alternate channels : Covering channels : Simpler reusability of classical P&R tools tunable channel width(in fixed increments) lower density(in terms of gates) gates are smaller smaller transistor size Covering channels : fixed channel width increased master cell area large transistor size both methods can be used together needs a special macro design

Metal Usage Signal routing : internal macro connections : metal 1 external horizontal wires(channels) : metal 1 external vertical wires : metal 2 metal 3&4, if any, follow direction of metal 1&2, respectively

Metal Usage power distribution : primary distribution : horizontal metal 1 lines secondary distribution : vertical metal 2 lines

Embedded Structures A part of the core is dedicated to a special function most often : static RAM but also ROM, A/D or D/A converters, PLL, … also : embedded test structures advantages : optimized function, performance, high density drawback s : less versatile array, need to maintain a larger master family(price !) Core is generic and supports various customizations reduced master family -> lower price higher flexibility, e.g. RAM size and location need adapted CAD tools

BiCMOS Master Architecture(1) Higher gate count(CMOS is denser) TTL or ECL I/Os examples : Hitachi 84 NTT 89(reduced voltage on-chip) now abandoned BiCMOS periphery blocks used for clock buffers, level conversion, … CMOS core : 60% - 95% area example : LSI Direct Drive Array(88)

BiCMOS Master Architecture(2) Variant of the previous mixed digital/analog applications bipolar part can contain passive elements can be seen as an embedded array example : LSI Logic Higher flexibility in the use of both devices full digital or mixed applications the most used architecture examples : Motorola, AMCC, Hitachi, TI, Toshiba NEC, Fujitsu

Standard Cell Layout(W=25mm in l=0.25mm

CBIC routing in 2-metal layers

Datapath composed of datapath cells Bit 31 Bit 0 Bit 1 Bit 30 adder control and power signals (metal 2) mux Bit 2 Data buses (metal 3) inv VDD (metal 1) (metal 2) control signal Data Buses VSS P diff. N diff. 1 bit-slice 2-1 mux inverter Tr. gate poly metal 1 metal 2 metal 3 Datapath cell = Bit Slice Ç Functional Element

5) ASIC design process

6) Cost Analysis Spreadsheet for fixed cost of FPGA MGA and CBIC

Spreadsheet for Variable cost of FPGA MGA and CBIC

Product Profit Model