OXIDE AND INTERFACE TRAPPED CHARGES, OXIDE THICKNESS

Slides:



Advertisements
Similar presentations
Agenda Semiconductor materials and their properties PN-junction diodes
Advertisements

Ray Nicanor M. Tag-at, Lloyd Henry Li
Radiation damage in silicon sensors
MOS – AK Montreux 18/09/06 Institut dÉlectronique du Sud Advances in 1/f noise modeling: 1/f gate tunneling current noise model of ultrathin Oxide MOSFETs.
ECSE-6230 Semiconductor Devices and Models I Lecture 14
6.1 Transistor Operation 6.2 The Junction FET
Electrical Engineering 2
R. van Langevelde, A.J. Scholten Philips Research, The Netherlands
P-N JUNCTION.
Chapter 9. PN-junction diodes: Applications
1 Chapter 13 Nuclear Magnetic Resonance Spectroscopy.
6.4.3 Effect of real surfaces Departure from the ideal case is due to Work function difference between the doped polysilicon gate and substrate The inevitably.
MOSFETs MOSFETs ECE 663.
Silicon Oxidation ECE/ChE 4752: Microelectronics Processing Laboratory Gary S. May January 15, 2004.
Electrical Techniques MSN506 notes. Electrical characterization Electronic properties of materials are closely related to the structure of the material.
Spring 2007EE130 Lecture 33, Slide 1 Lecture #33 OUTLINE The MOS Capacitor: C-V examples Impact of oxide charges Reading: Chapter 18.1, 18.2.
Lecture 11: MOS Transistor
CHAPTER 5 DEFECTS.
Lecture 15 OUTLINE MOSFET structure & operation (qualitative)
Metal-Oxide-Semiconductor (MOS)
EE415 VLSI Design The Devices: MOS Transistor [Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]
半導體量測技術 Semiconductor Materials and Device Characterization Topic 5: oxide trapped charge and poly-depletion effect in MOSFET Instructor: Dr. Yi-Mu Lee.
EE105 Fall 2007Lecture 16, Slide 1Prof. Liu, UC Berkeley Lecture 16 OUTLINE MOS capacitor (cont’d) – Effect of channel-to-body bias – Small-signal capacitance.
Mobility Chapter 8 Kimmo Ojanperä S , Postgraduate Course in Electron Physics I.
Lecture 2 Chapter 2 MOS Transistors. Voltage along the channel V(y) = the voltage at a distance y along the channel V(y) is constrained by the following.
Techniques for determination of deep level trap parameters in irradiated silicon detectors AUTHOR: Irena Dolenc ADVISOR: prof. dr. Vladimir Cindro.
Norhayati Soin 06 KEEE 4426 WEEK 7/1 6/02/2006 CHAPTER 2 WEEK 7 CHAPTER 2 MOSFETS I-V CHARACTERISTICS CHAPTER 2.
Reliability of ZrO 2 films grown by atomic layer deposition D. Caputo, F. Irrera, S. Salerno Rome Univ. “La Sapienza”, Dept. Electronic Eng. via Eudossiana.
OXIDE AND INTERFACE TRAPPED CHARGES, OXIDE THICKNESS
Avalanche Transit Time Devices
EXAMPLE 6.1 OBJECTIVE Fp = 0.288 V
Norhayati Soin 06 KEEE 4426 WEEK 3/2 13/01/2006 KEEE 4426 VLSI WEEK 3 CHAPTER 1 MOS Capacitors (PART 2) CHAPTER 1.
ENE 311 Lecture 9.
© 2012 Eric Pop, UIUCECE 340: Semiconductor Electronics ECE 340 Lecture 30 Metal-Semiconductor Contacts Real semiconductor devices and ICs always contain.
1 Fundamentals of Microelectronics  CH1 Why Microelectronics?  CH2 Basic Physics of Semiconductors  CH3 Diode Circuits  CH4 Physics of Bipolar Transistors.
ULIS 2003-Udine Italy Evolution of Si-SiO 2 interface trap density under electrical stress in MOSFETs with ultrathin oxides F. Rahmoune and D. Bauza Institut.
ECE 4339 L. Trombetta ECE 4339: Physical Principles of Solid State Devices Len Trombetta Summer 2007 Chapters 16-17: MOS Introduction and MOSFET Basics.
Norhayati Soin 06 KEEE 4426 WEEK 3/1 9/01/2006 KEEE 4426 VLSI WEEK 3 CHAPTER 1 MOS Capacitors (PART 1) CHAPTER 1.
Lecture 18 OUTLINE The MOS Capacitor (cont’d) – Effect of oxide charges – Poly-Si gate depletion effect – V T adjustment Reading: Pierret ; Hu.
Introduction Amorphous arrangement of atoms means that there is a possibility that multiple Si atoms will be connected Amorphous arrangement of atoms means.
ECE442: Digital ElectronicsCSUN, Spring-2010-Zahid MOS Transistor ECE442: Digital Electronics.
Lecture 18 OUTLINE The MOS Capacitor (cont’d) – Effect of oxide charges – V T adjustment – Poly-Si gate depletion effect Reading: Pierret ; Hu.
HO #3: ELEN Review MOS TransistorsPage 1S. Saha Long Channel MOS Transistors The theory developed for MOS capacitor (HO #2) can be directly extended.
Introduction to MOS Transistors Section Outline Similarity Between BJT & MOS Introductory Device Physics Small Signal Model.
Norhayati Soin 06 KEEE 4426 WEEK 3/2 20/01/2006 KEEE 4426 VLSI WEEK 4 CHAPTER 1 MOS Capacitors (PART 3) CHAPTER MOS Capacitance.
Introduction to semiconductor technology. Outline –6 Junctions Metal-semiconductor junctions –6 Field effect transistors JFET and MOS transistors Ideal.
© 2012 Eric Pop, UIUCECE 340: Semiconductor Electronics ECE 340 Lecture 38 MOS capacitor Threshold Voltage Inversion: at V > V T (for NMOS), many electrons.
Integrated Circuit Devices
Metal-oxide-semiconductor field-effect transistors (MOSFETs) allow high density and low power dissipation. To reduce system cost and increase portability,
Field Effect Transistor (FET)
© S.N. Sabki CHAPTER 6: MOSFET & RELATED DEVICES CHAPTER 6: MOSFET & RELATED DEVICES.
ALD Oxides Ju Hyung Nam, Woo Shik Jung, Ze Yuan, Jason Lin 1.
The MOS capacitor. (a) Physical structure of an n+-Si/SiO2/p-Si MOS capacitor, and (b) cross section (c) The energy band diagram under charge neutrality.
MOS CAPACITOR Department of Materials Science & Engineering
Deep Level Transient Spectroscopy study of 3D silicon Mahfuza Ahmed.
EE130/230A Discussion 10 Peng Zheng.
CHAPTER 6: MOSFET & RELATED DEVICES CHAPTER 6: MOSFET & RELATED DEVICES Part 1.
Extraction of Doping Profile in Substrate of MNOS capacitor Using Fast Voltage Ramp Deep Depletion C-V method.
UNIT II : BASIC ELECTRICAL PROPERTIES
Lecture 18 OUTLINE The MOS Capacitor (cont’d) Effect of oxide charges
Revision CHAPTER 6.
6.3.3 Short Channel Effects When the channel length is small (less than 1m), high field effect must be considered. For Si, a better approximation of field-dependent.
EMT362: Microelectronic Fabrication CMOS ISOLATION TECHNOLOGY Part 1
MOS Capacitor Basics Metal SiO2
Lecture 18 OUTLINE The MOS Capacitor (cont’d) Effect of oxide charges
Sung June Kim Chapter 16. MOS FUNDAMENTALS Sung June Kim
6.1 Transistor Operation 6.2 The Junction FET
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Sung June Kim Chapter 18. NONIDEAL MOS Sung June Kim
MOSCAP Non-idealities
Presentation transcript:

OXIDE AND INTERFACE TRAPPED CHARGES, OXIDE THICKNESS Yameng Bao Yameng.bao@aalto.fi Electron Physics Group

Outline 1.Introduction 2. Fixed Oxide Trapped, and Mobile Oxide Charge 3. Interface Trapped Charge 4. Oxide Thickness 5. Strengths and Weaknesses

1.Introduction Capacitance-voltage and oxide thickness measurements must be more carefully interpreted for thin, leaky oxides Charges and defects in the oxide Variable Capacitance Insulation and passivation High dielectric constant Low leakage current and low tunnel current-lower power waste lower temperature of device Focus on SiO2-Si system

(1). Interface Trapped Charge(Qit ,Nit , Dit) (2). Fixed Oxide Charge(Qf , Nf ) (3) Oxide Trapped Charge (Qot , Not ) (4) Mobile Oxide Charge (Qm,Nm)

Oxide Charges (1) Interface Trapped Charge(Qit) Due to structural defects, oxidation-induced defects, metal impurities, or other defects caused by radiation or similar bond breaking processes Unlike fixed charge or trapped charge interface trapped charge is in electrical communication with the underlying silicon Could be neutralized by low T H2 or forming Gas(N2&H2)

Oxide Charges (2) Fixed Oxide Charge(Qf)(near the interface) Coming from oxidation process Usually measure after Annealing to eliminate the effect of the interface trapped charge It depends on final oxidation temperature Always present in any cases

Oxide Charges (3) Oxide Trapped Charge(Qot) Due to the ionizing radiation, avalanche injection and so on Sometimes could be annealed by Low-T treatment but the neutral traps still remain (4) Mobile Oxide Charge(Qm) Caused by Na+, Li+, K+ and so on Chlorine atom may reduce this charge

2. Fixed Oxide Trapped, and Mobile Oxide Charge (1) Capacitance-voltage Curve QG is gate charge density VG is gate voltage QG =-(Qs + Qit) Qs is semiconductor charge density Qit is interface charge density V G = V FB + V ox + φ s VFBis flatband voltage V oxis oxide voltage φ sis surface potential Q S = Q p +Q b + Q n Qp is hole charge density, Qb is space-charge region bulk charge density Qn is electron charge density

2. Fixed Oxide Trapped, and Mobile Oxide Charge (1) Capacitance-voltage Curve V > 0 V >> 0 V < 0 Accumulation Strong inversion Depletion For P type substrate

2. Fixed Oxide Trapped, and Mobile Oxide Charge (1) Capacitance-voltage Curve For negative gate voltages Accumulation: 1) Big negative voltage Qp dominates . Cp is short circuit

2. Fixed Oxide Trapped, and Mobile Oxide Charge (1) Capacitance-voltage Curve Depletion Small negative voltage and small positive voltage Qb=-qNAW In week inversion Cn begin to appear Strong inversion Cn domains a) If the inversion charge could follow the HF-AC, C=Cox b) if the inversion could not follow, C=Cox+Cb

2. Fixed Oxide Trapped, and Mobile Oxide Charge (1) Capacitance-voltage Curve When the dc bias voltage is changed rapidly with insufficient time for inversion charge generation, the deep-depletion curve results. Its high- or low-frequency semiconductor capacitance is Cdd Effect of sweep direction and sweep rate on the hf MOS-C capacitance on p-substrate,

2. Fixed Oxide Trapped, and Mobile Oxide Charge (2) Flatband Voltage The flatband voltage is determined by the metal-semiconductor work function difference φMS and the various oxide charges through the relation Metal-S work function different Interface trapped charge Charges in oxide Fixed charge Charges in metal Determine the VFB

2. Fixed Oxide Trapped, and Mobile Oxide Charge (3) Capacitance Measurement High Frequency: High-frequency C – V curves are typically measured at 10 kHz – 1 MHz. Using a phase sensitive detector, one can determine the conductance G or the capacitance C, knowing R and ω = 2πf

2. Fixed Oxide Trapped, and Mobile Oxide Charge (3) Capacitance Measurement Low Frequency: Current-Voltage Low Frequency: Current-Voltage: The low-frequency capacitance of an MOS-C is usually not obtained by measuring the capacitance, but rather by measuring a current or a charge, because capacitance measurements at low frequencies are very noisy. Low F High F

2. Fixed Oxide Trapped, and Mobile Oxide Charge (3) Capacitance Measurement Low Frequency: Current-Voltage and Charge-Voltage Q-V is more suitable for MOS measurement

2. Fixed Oxide Trapped, and Mobile Oxide Charge (4) Fixed Charge a) The fixed charge is determined by comparing the flatband voltage shift of an experimental C – V curve with a theoretical curve and measure the voltage shift To determine Qf ,one should eliminate or at least reduce the effects of all other oxide charges and reduce the interface trapped charge to as low a value as possible. Qit is reduced by annealing in a forming gas. b) Second method using differing tox Plot VFB versus tox with slope Qf /Kox ε0 and intercept φMS . This method, requires MOS capacitors with differing tox .However, it is more accurate because it is independent of φMS . Kox is semiconductor dielectric constant

2. Fixed Oxide Trapped, and Mobile Oxide Charge (5) Work function difference φ MS depends on oxidation temperature, wafer orientation, interface trap density, and on the low temperature Dit anneal (6) Oxide Trapped Charge(Qot) The distribution of Qot must be known for proper interpretation of C –V curves. Trapped charge distributions are measured most commonly by the etch-off and the photo I –V methods A determination of the charge distribution in the oxide is tedious and therefore not routinely done. In the absence of such information, the Vfb shift due to charge injection is generally interpreted by assuming the charge is at the oxide-semiconductor interface using the expression

2. Fixed Oxide Trapped, and Mobile Oxide Charge (5) Mobile Charge Mobile charge in SiO 2 is due primarily to the ionic impurities Na+, Li+, K+, and perhaps H+. Sodium is the dominant contaminant. Bias-Temperature Stress( BTS): Measured at 250C, under gate bias, measure CV then cool down to 25C, then measure CV, the Qm is determined by Vfb shift. Triangular voltage sweep (TVS) method: Clf and Chf measured at T=250C, The Qm is determined from the area between the two curves

3. Interface trapped charge (1) Low frequency(Quasi-static) methods Experimental-LF HF LF Effect of D it on MOS-C capacitance-voltage curves. (a) Theoretical high-frequency,(b) theoretical low-frequency and (c) experimental low-frequency curves. Gate voltage stress generated interface traps This stretch-out is not the result of interface traps contributing excess capacitance, but rather it is the result of the C –V curve stretch-out along the gate voltage axis Interface traps do respond to the probe frequency at LF, and the curve distorts because the interface traps contribute interface trap capacitance Cit and the curve stretches out along the voltage axis

3. Interface trapped charge (1) Low frequency(Quasi-static) methods ΔC/Cox =Clf /Cox − Chf /Cox

3. Interface trapped charge (2) Conductance Method One of the most sensitive methods to determine D it Interface trap densities of 109 cm− 2eV− 1and lower can be measured. The conductance is measured as a function of frequency and plotted as G P /ω versus ω. GP /ω has a maximum at ω =1/τ it and at that maximum Dit=2GP/qω. we find ω ≈ 2/τ it and D it =2.5GP/qω at the maximum. Hence we determine D it from the maximum G P /ω and determine τ it from ω at the peak conductance location on the ω-axis.

3. Interface trapped charge (3)High Frequency Method Terman Method: In HF CV, interface traps do not respond to the ac probe frequency, they do respond to the slowly varying dc gate voltage and cause the hf C –V curve to stretch out along the gate voltage axis as interface trap occupancy changes with gate bias ΔV G = V G –V G (ideal) is the voltage shift of the experimental from the ideal curve, and V G the experimental gate voltage The method is generally considered to be useful for measuring interface trap densities of 10 10 cm− 2 eV− 1and above

3. Interface trapped charge (3)High Frequency Method Gray-Brown and Jenq Method:, the CHF measured as a function of T. Reducing the T causes the Fermi level to shift towards the majority carrier band edge and the interface trap time constant τ it increases at lower T. Hence interface traps near the band edges should not respond to typical ac probe frequencies at low T whereas at room temperature they do respond. This method should extend the range of interface traps measurements to D it near the majority carrier band edge Compared with DLTS?

3. Interface trapped charge (4)Other Methods 1.Charge Pumping 3. DC-IV method 2. MOSFET Sub-threshold Current method 3. DC-IV method 4. deep-level transient spectroscopy(DLTS) 5. charge-coupled devices (CCD) 6. electron spin resonance (ESR)

3. Oxide thickness C –V , I –V , ellipsometry, transmission electron microscopy(TEM), X-ray photoelectron spectroscopy (XPS), medium energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), Rutherford backscattering (RBS), elastic backscattering spectrometry (EBS), secondary ion mass spectrometry (SIMS), grazing incidence X-ray reflectometry (GIXRR), and neutron reflectometry (1)Capacitance-Voltage(equivalent electrical thickness)

3. Oxide thickness (2)Current-Voltage The current flowing through an insulator is either Fowler-Nordheim (FN) or direct tunnel current (a) V ox < qφB (direct tunneling) (b) V ox > qφB Fowler-Nordheim tunneling

3. Oxide thickness (3)Other methods Ellipsometry: Suitable for oxides into the 1–2 nm regime. Variable angle, spectroscopic ellipsometry is especially suited for oxide thickness measurements Transmission Electron Microscopy is very precise and usable to very thin oxides, but sample preparation is tedious X-ray Photoelectron Spectroscopy

4. Strength and Weakness (1)Mobile Oxide Charge Bias temperature stress method Requiring the measurement of a C –V at different Ts Total mobile charge density will be measured, No separation Triangular voltage sweep method Could differentiate different mobile charges, high sensitivity, fast Increasing oxide leakage current for thin film (2) Interface tapped charge(conductance and low frequency method Conductance method high sensitivity, majority carrier capture cross sections Limited surface potential range Quasi-static method(I-V/Q-V) Easy to measure, large surface potential range I-V the requirement for I-V, current is low For I-V and Q-V leakage current could be a big problem

4. Strength and Weakness (3)Oxide Thickness MOS C –V measurements are most common. Leakage current make the result much difficult I-V used for thickness extraction Ellipsometry is mostly used for thickness, very sensitive to thin oxides XPS suitable for very thin oxide

All the charges seems affect each other during the measurement. 5. Questions? All the charges seems affect each other during the measurement. For thin oxide, the tunnel current or leakage current will effect the result. Real measurement is always not as simple as description in the book! O(∩_∩)O