Thin Film Analysis by Ion Beam Techniques

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Thin Film Analysis by Ion Beam Techniques W. Hong, G. D. Kim, H. J. Woo, H. W. Choi and J. K. Kim

Characteristics of MeV Ion Beam Analysis Nondestructive Absolute, quantitative High sensitivity Depth profiling in the first micron Light element detection (ERDA, NRA, PIGE) Ultra high sensitive isotope measurement Versatile External Beam available

RBS vs TOF-ERDA

Tandem Accelerator in KIGAM

Multipurpose chamber for RBS & TOF-ERD

Rutherford Backscattering Spectrometry (RBS) Semiconductors Superconductors Optical films Material science

TOF-ERDA BN on Si

Electrolytic Li-Ni-V-O(H)/Si (1000 A) RBS result TOF-ERD result

Thick 600  1015 atoms/ cm2 (22.56 mg/cm2, ~ 440 A) Element Areal density Atomic ratio Areal density Mass ratio (1015 atoms/ cm2) (%) (mg/cm2) (%) H 69.3 11.5 0.12 0.51 Li 112.6 18.8 1.30 5.75 O 259.7 43.3 6.90 30.59 Ar 2.6 0.43 0.17 0.76 V 86.6 14.4 7.32 32.46 Ni 69.3 11.5 6.75 29.92

Electrolytic Si-P-N-O-Li on Si (2000 A) RBS result TOF-ERD result

Thick 3500  1015 atoms/ cm2 (87.59 mg/cm2, ~ 1600 A) Element Areal density Atomic ratio Areal density Mass ratio (1015 atoms/ cm2) (%) (mg/cm2) (%) H 55.8 1.6 0.09 0.11 Li 1283.6 36.7 14.80 16.89 C 27.9 0.8 0.56 0.64 N 725.68 20.7 16.88 19.27 O 725.68 20.7 19.28 22.01 Si 117.22 3.4 5.47 6.24 P 558.21 16.0 28.71 32.77 Pt 5.58 0.2 1.81 2.06

Active layer of TFT and PDP display Ru on Si (300 A) RBS result TOF-ERD result

Thick 270  1015 atoms/ cm2 (42.27 mg/cm2, ~ 340 A) Element Areal density Atomic ratio Areal density Mass ratio (1015 atoms/ cm2) (%) (mg/cm2) (%) H 5.0 1.9 0.01 0.02 C 15.0 5.6 0.30 0.71 Ru 250.0 92.6 41.96 99.27

Dielectric layer of semiconductor Ru - O on Si (300 A) RBS result TOF-ERD result

Layer 1 Thick 50  1015 atoms/ cm2 (3.37 mg/cm2 , ~ 30 A) Element Areal density Atomic ratio Mass density Mass ratio (1015 atoms/ cm2) (%) (mg/cm2) (%) H 17.9 35.7 0.03 0.88 C 5.4 10.7 0.11 3.17 O 8.9 17.9 0.24 7.04 Ru 17.9 35.7 3.37 88.91 Layer 2 Thick 150  1015 atoms/ cm2 (19.22 mg/cm2 , ~ 160 A) H 2.2 1.5 0.00 0.02 C 27.4 18.3 0.55 2.84 O 11.0 7.3 0.29 1.51 Ru 109.5 73.0 18.38 95.63

Neutron generation target Ti-3H on Cu, 3H(p,n)3He TOF-ERD result (film composition) RBS result (before H irradiation)

Temperature variation of target with H irradiation RBS result (after H irradiation)

Areal density of Ti (atom/cm2) of 3H (atom/cm2) Before irradiation After irradiation Cal. by neutron cross section Maker data 1.4 x 1019 4.6 x 1018 1.3 x 1019 3.8 x 1019 1.28 x 1019 2.5-3.8 x 1018 4.8 x 1018

Conclusion RBS and TOF-ERD are mutually assistant in analysis from light elements to heavy elements Electrolytic films in which composition of light elements is important were analyzed It was found that Ru film can be a good dielectric film by introducing small amount of oxygen Nitrogen and oxygen were observed in a titanium tritide target and the results reduced error of neutron cross section measurement Cu migration during proton irradiation was also observed by RBS measurement in spite of cooling by freon circulation Ion beam analysis techniques are very successfully applied to many fields of thin film studies

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